MIEB101H1200EH

MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE(sat) = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 1 T1 D1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: Application: Package: • SPT IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • SONIC™ free wheeling diode - fast and soft reverse recovery - low operation forward voltage • solderable pins for PCB mounting • package with copper base plate • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • "E3-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting + IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110615a 1-8 MIEB 101H1200EH Ouput Inverter T1 - T4 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 183 128 A A TC = 25°C 630 W collector emitter saturation voltage (on chip level)  IC = 100 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 2.2 2.4 V V VGE(th) gate emitter threshold voltage IC = 4 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VGE = ±20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 7430 pF QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 100 A 750 nC td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive load VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 10 W LS = 70 nH 120 55 460 240 9.5 9.7 4.2 ns ns ns ns mJ mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 10 W; SCSOA tSC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±10 V; RG = 3.9 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 25°C 1.8 2.0 5 TVJ = 125°C 6 7 V 0.9 0.3 3 mA mA 200 nA TVJ = 125°C VCEK = 1200 V 200 A TVJ = 125°C 10 µs 0.2 K/W max. Unit Output Inverter D1 - D4 Ratings Symbol Definitions Conditions min. VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 135 90 A A VF forward voltage (on chip level)  IF = 100 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 2.20 2.25 V V Irr trr Qrr Erec max. reverse recovery current reverse recovery time inductive load VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 10 W LS = 70 nH RthJC thermal resistance junction to case TVJ = 125°C typ. 2.00 1.95 120 330 12.5 4.2 (per diode) A ns µC mJ 0.4 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110615a 2-8 MIEB 101H1200EH Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque (M5) Rpin to chip see  dS dA creep distance on surface strike distance through air RthCH thermal resistance case to heatsink Conditions min. -40 -40 IISOL < 1 mA; 50/60 Hz Ratings typ. max. 125 150 125 Unit °C °C °C 3000 3600 V~ V~ t = 1 min t=1s 200 3 6 1.8 12.7 9.6 with heatsink compound Weight  VCE = VCE(sat) + 2x Rpin to chip · IC Nm mW mm mm 0.1 K/W 300 g TC = 25°C unless otherwise stated Curves are measured on modul level except Fig. 14 to Fig. 17 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110615a 3-8 MIEB 101H1200EH Circuit Diagram 13, 21 2D Data Matrix FOSS-ID 6 digits T1 1 D1 D2 9 T2 XXX XX-XXXXX Logo 10 2 Part name 19 D3 T3 M = Module I = IGBT E = SPT B = 2nd Generation 101 = Current Rating [A] H = H~ Bridge 1200 = Reverse Voltage [V] EH = E3-Pack D4 11 T4 12 4 Prod.Index Date Code Part number 15 3 YYCWx 14, 20 Outline Drawing Dimensions in mm (1 mm = 0.0394“) Remark: Dimensions without tolerances acc. DIN ISO 2768-T1-m Product Marking Ordering Part Name Marking on Product Standard MIEB101H1200EH MIEB101H1200EH IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 5 510534 20110615a 4-8 MIEB 101H1200EH Transistor T1 - T4 300 300 VGE = 15 V IC 250 250 200 200 [A] 100 100 50 9V 50 0 1 2 3 4 0 5 0 1 2 VCE [V] 5 800 1000 20 IC = 100 A VCE = 600 V 200 15 150 VGE [A] 100 10 [V] TVJ = 125°C 50 5 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 200 400 VGE [V] 30 600 QG [nC] Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. transfer characteristics E 4 Fig. 2 Typ. output characteristics 250 0 3 VCE [V] Fig. 1 Typ. output characteristics IC 11 V IC 150 TVJ = 125°C [A] 0 13 V TVJ = 125°C TVJ = 25°C 150 VGE = 15 V 17 V 19 V 150 24 600 25 125 20 500 20 100 16 td(on) RG = 10 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 15 [mJ] 10 Erec(off) 5 0 tr Eon 0 20 40 60 80 100 120 140 160 180 200 75 t E [ns] [mJ] 25 4 0 0 IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 300 [ns] 8 Fig. 5 Typ. turn-on energy & switching times versus collector current 400 t 12 50 IC [A] td(off) RG = 10 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C Eoff 0 20 40 60 tf 80 100 120 140 160 180 200 200 100 0 IC [A] Fig. 6 Typ. turn-off energy & switching times versus collector current 20110615a 5-8 MIEB 101H1200EH Transistor T1 - T4 20 15 200 td (on) IC = 100 A VCE = 600 V VGE = ±15 V TVJ = 125°C 8 tr 100 t [ns] 5 800 E 6 IC = 100 A VCE = 600 V VGE = ±15 V TVJ = 125°C [mJ] 4 50 Erec(off) 0 5 1000 td(off) Eoff 150 Eon 0 1200 10 E 10 [mJ] 12 10 2 15 20 25 30 0 35 0 600 400 tf 0 5 10 15 20 25 30 RG [Ω] Fig. 7 Typ. turn-on energy and switching times versus gate resistor Fig. 8 Typ. turn-off energy and switching times versus gate resistor © 2011 IXYS All rights reserved [ns] 200 0 35 RG [Ω] IXYS reserves the right to change limits, test conditions and dimensions. t 20110615a 6-8 MIEB 101H1200EH Diode D1 - D4 300 300 TVJ = 25°C 250 IF 250 600 500 RG = 33 Ω 22 Ω 200 200 Irr TVJ = 125°C 150 150 [A] [A] trr 10 Ω 100 100 400 10 Ω IF = 100 A Vr = 600 V TVJ = 125°C Irr 3.3 Ω 300 trr [ns] 200 22 Ω 33 Ω 50 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 0 1000 4.0 1500 150 Irr Fig. 10 Typ. reverse recovery characteristics 100 75 50 0.3 Qrr ZthJC [µC] [K/W] 0.2 20 Qrr Irr Diode 0.4 30 125 [A] 0.5 40 Rg = 10 Ω Vr = 600 V TVJ = 125°C 175 0 3000 2500 diF /dt [A/µs] VF [V] Fig. 9 Typ. forward characteristics 200 2000 10 IGBT 0.1 25 0 0 25 50 75 0 100 125 150 175 200 225 0.0 0.001 0.01 Fig. 11 Typ. reverse recovery characteristics 0.1 1 10 tp [s] IF [A] Fig. 12 Typ. transient thermal impedance Ri IGBT τi FRD Ri τi 0.003 0.00001 0.015 0.0005 0.010 0.0014 0.04 0.006 0.057 0.021 0.09 0.025 0.130 0.1 0.255 0.125 Fig. 13 Thermal coefficients IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110615a 7-8 MIEB 101H1200EH Diode D1 - D4 24 160 TVJ = 125°C VR = 600 V 20 VR = 600 V 200 A Irr Qrr 16 [A] 100 A [µC] 12 200 A TVJ = 125°C 140 100 A 120 50 A 100 80 50 A 8 60 4 1000 1200 1400 1600 1800 2000 40 1000 2200 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] diF /dt [A/µs] Fig. 15 Typ. peak reverse current IRM vs. di/dt Fig. 14 Typ. reverse recov.charge Qrr vs. di/dt 700 8 600 200 A TVJ = 125°C TVJ = 125°C VR = 600 V VR = 600 V 6 500 200 A trr 400 [ns] 300 Erec [mJ] 100 A 200 100 A 4 50 A 2 50 A 100 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] Fig. 16 Typ. recovery time trr versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] Fig. 17 Typ. recovery energy Erec versus di/dt 20110615a 8-8