MIXA100W1200TEH

MIXA100W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE(sat) = 1.8 V Part name (Marking on product) MIXA100W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines. D6 11 T6 12 13, 14, 15 33, 34, 35 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • "E3-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting • Temperature sense included • Optimizes pin layout IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110505a 1-6 MIXA100W1200TEH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 155 108 A A TC = 25°C 500 W collector emitter saturation voltage IC = 100 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 1.8 2.1 2.1 V V VGE(th) gate emitter threshold voltage IC = 4 mA; VGE = VCE TVJ = 25°C 6.0 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C 0.03 0.6 0.3 mA mA IGES gate emitter leakage current VGE = ±20 V 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 100 A 295 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 7 W TVJ = 125°C 70 40 250 100 8.5 11 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 7 W; TVJ = 125°C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 7 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 25°C 5.4 TVJ = 125°C 300 A 10 µs A 0.25 K/W 400 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1600 A/µs IF = 100 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ = 25°C 1200 V TC = 25°C TC = 80°C 135 90 A A IF = 100 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 1.95 1.95 2.2 V V TVJ = 125°C 12.5 100 350 4 µC A ns mJ 0.4 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110505a 2-6 MIXA100W1200TEH Temperature Sensor NTC Symbol R25 B25/50 Definitions Conditions resistance TC = 25°C min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K min. -40 Ratings typ. max. 125 150 125 Unit °C °C °C 3000 V~ 100000 10000 R 1000 [Ω] 100 10 0 25 50 75 100 125 150 TC [°C] Typ. NTC resistance vs. temperature Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque (M5) dS dA creep distance on surface strike distance through air Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink Conditions -40 IISOL < 1 mA; 50/60 Hz 200 3 6 10 7.5 with heatsink compound Weight Nm mm mm 2.5 mW 0.02 K/W 300 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 V0 R0 R0 Definitions IGBT Conditions T1 - T6 min. TVJ = 150°C free wheeling diode D1 - D6 TVJ = 150°C Ratings typ. max. 1.1 13.8 Unit V mW 1.25 8.5 V mW TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110505a 3-6 MIXA100W1200TEH Circuit Diagram 16, 17, 18 30, 31, 32 1 5 9 2 6 10 XXX XX-XXXXX Logo 19 27 28 29 NTC 20 2D Data Matrix FOSS-ID 6 digits 24 25 26 Part name 21 22 23 3 7 11 4 8 12 Prod.Index Date Code Part number M = Module I = IGBT X = XPT A = standard 100 = Current Rating [A] W = Six-Pack 1200 = Reverse Voltage [V] T = NTC EH = E3-Pack 13, 14, 15 33, 34, 35 YYCWx Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Ordering Part Name Marking on Product Standard MIXA100W1200 TEH MIXA100W1200TEH IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 5 tbd 20110505a 4-6 MIXA100W1200TEH Transistor T1 - T6 200 200 VGE = 15 V 150 IC TVJ = 25°C IC TVJ = 125°C [A] TVJ = 125°C 100 [A] 50 9V 50 0 1 2 0 3 0 1 2 20 IC = 100 A VCE = 600 V 180 160 15 140 IC 120 VGE 100 10 [V] 80 60 5 40 TVJ = 125°C 20 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 VGE [V] 20 16 RG = 6.8 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 18 16 14 100 E 10 [mJ] 8 [mJ] 12 400 Eoff 10 Eoff 4 300 IC = 100 A VCE = 600 V VGE = ±15 V TVJ = 125°C 14 12 6 200 QG [nC] Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics E 4 Fig. 2 Typ. output characteristics 200 0 3 VCE [V] VCE [V] Fig. 1 Typ. output characteristics [A] 11 V 150 100 0 13 V VGE = 15 V 17 V 19 V Eon Eon 8 2 0 0 40 80 120 160 200 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 6 0 4 8 12 16 20 24 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20110505a 5-6 MIXA100W1200TEH Inverter D1 - D6 200 24 TVJ = 125°C VR = 600 V 20 150 200 A Qrr 16 IF 100 [A] 100 A [µC] 12 TVJ = 125°C 50 TVJ = 25°C 0 0.0 0.5 1.0 50 A 8 1.5 2.0 2.5 4 1000 3.0 1200 1400 160 2000 2200 700 TVJ = 125°C 140 [A] 1800 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt Fig. 7 Typ. Forward current versus VF IRM 1600 diF /dt [A/µs] VF [V] 200 A 600 100 A 500 VR = 600 V 120 trr 50 A 100 TVJ = 125°C VR = 600 V 200 A 400 [ns] 300 80 100 A 200 60 50 A 100 40 1000 1200 1400 1600 1800 2000 0 1000 2200 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 1 8 200 A TVJ = 125°C VR = 600 V Diode 6 IGBT 100 A Erec ZthJC 0.1 4 [mJ] 50 A IGBT [K/W] 1 2 3 4 2 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 0.01 0.001 0.01 FRD Ri ti Ri ti 0.05 0.035 0.12 0.045 0.002 0.03 0.03 0.08 0.092 0.067 0.155 0.086 0.002 0.03 0.03 0.08 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance 20110505a 6-6