0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MIXA101W1200EH

MIXA101W1200EH

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    E3

  • 描述:

    IGBT MODULE 1200V 108A HEX

  • 数据手册
  • 价格&库存
MIXA101W1200EH 数据手册
MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE(sat) = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 6 T3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 μsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • "E3-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting • Optimizes pin layout IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110715a 1-6 MIXA 101W1200EH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 100 A; VGE = 15 V TVJ = 25°C TVJ = 125°C VGE(th) gate emitter threshold voltage IC = 4 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VGE = ±20 V typ. TVJ = 25°C max. 1200 V ±20 ±30 V V 155 108 A A continuous transient TC = 25°C TC = 80°C TC = 25°C 5.4 Unit 500 W 1.8 2.1 2.1 V V 6.0 6.5 V 0.03 0.6 0.3 mA mA 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 100 A 295 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 7 Ω 70 40 250 100 8.5 11 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 7 Ω; SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 7 Ω; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 125°C TVJ = 125°C VCEK = 1200 V 300 A 10 μs A 0.25 K/W TVJ = 125°C 400 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 135 90 A A VF forward voltage IF = 100 A; VGE = 0 V 2.2 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1600 A/μs IF = 100 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) TVJ = 25°C TVJ = 125°C 1.95 1.95 TVJ = 125°C 12.5 100 350 4 μC A ns mJ 0.4 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110715a 2-6 MIXA 101W1200EH Module Ratings Symbol Definitions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque (M5) dS dA creep distance on surface strike distance through air Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink Conditions min. typ. -40 -40 IISOL < 1 mA; 50/60 Hz max. Unit 125 150 125 °C °C °C 3000 V~ 200 3 6 10 7.5 with heatsink compound Weight Nm mm mm 2.5 m: 0.02 K/W 300 g Equivalent Circuits for Simulation I R0 V0 Symbol V0 R0 V0 R0 Definitions IGBT Conditions T1 - T6 min. TVJ = 150°C free wheeling diode D1 - D6 TVJ = 150°C Ratings typ. max. 1.1 13.8 Unit V mΩ 1.25 8.5 V mΩ TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110715a 3-6 MIXA 101W1200EH Circuit Diagram ''DWD0DWUL[ )266,'GLJLWV 13, 21 D1 T1 1 D2 5 T2 D3 9 ;;;;;;;;;; T3 /RJR 2 6 3DUWQDPH 10 19 17 15 D4 T4 3 D5 7 T5 8 4 3URG,QGH[ 'DWH&RGH Part number M I X A 101 W 1200 EH D6 11
MIXA101W1200EH 价格&库存

很抱歉,暂时无法提供与“MIXA101W1200EH”相匹配的价格&库存,您可以联系我们找货

免费人工找货