MIXA150W1200TEH

MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE(sat) = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines. D6 11 T6 12 13, 14, 15 33, 34, 35 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • "E3-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting • Temperature sense included • Optimizes pin layout IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110510b 1-6 MIXA150W1200TEH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 220 150 A A TC = 25°C 695 W collector emitter saturation voltage IC = 150 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 6 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VGE = ±20 V TVJ = 25°C 1.8 2.1 5.4 6.0 6.5 V 0.05 1.0 0.5 mA mA 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 150 A 470 nC td(on) tr td(off) tf Eon Eoff Erec turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse diode turn-off energy per pulse inductive load VCE = 600 V; IC = 150 A VGE = ±15 V; RG = 4.7 W 70 40 250 100 14 16 10 ns ns ns ns mJ mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 4.7 W; SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 4.7 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 125°C TVJ = 125°C VCEK = 1200 V TVJ = 125°C 450 A 10 µs A 0.18 K/W 600 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -2500 A/µs IF = 150 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ = 25°C 1200 V TC = 25°C TC = 80°C 190 130 A A IF = 150 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 1.95 1.95 2.2 V V TVJ = 125°C 20 175 350 10 µC A ns mJ 0.28 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110510b 2-6 MIXA150W1200TEH Temperature Sensor NTC Symbol R25 B25/50 Definitions resistance Conditions Definitions Conditions TC = 25°C min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K min. -40 Ratings typ. max. 125 150 125 Unit °C °C °C 3000 V~ Module Symbol TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque (M5) dS dA creep distance on surface strike distance through air Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink -40 IISOL < 1 mA; 50/60 Hz 200 3 6 10 7.5 with heatsink compound Weight Nm mm mm 2.5 mW 0.02 K/W 300 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 V0 R0 R0 Definitions IGBT Conditions T1 - T6 min. TVJ = 150°C free wheeling diode D1 - D6 TVJ = 150°C Ratings typ. max. 1.1 9.2 Unit V mW 1.25 5.7 V mW TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110510b 3-6 MIXA150W1200TEH Circuit Diagram 16, 17, 18 30, 31, 32 19 1 5 9 2 6 10 27 28 29 NTC 20 24 25 26 2D Data Matrix FOSS-ID 6 digits XXX XX-XXXXX Logo Part name 21 22 23 3 7 11 4 8 12 Prod.Index Date Code Part number M = Module I = IGBT X = XPT A = standard 150 = Current Rating [A] W = Six-Pack 1200 = Reverse Voltage [V] T = NTC EH = E3-Pack 13, 14, 15 33, 34, 35 YYCWx Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Ordering Part Name Marking on Product Standard MIXA150W1200 TEH MIXA150W1200TEH IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 5 509654 20110510b 4-6 MIXA150W1200TEH Transistor T1 - T6 300 300 13 V VGE = 15 V IC 250 250 200 200 TVJ = 25°C 150 IC TVJ = 125°C [A] 150 [A] 9V 100 50 50 0 1 2 11 V TVJ = 125°C 100 0 VGE = 15 V 17 V 19 V 0 3 0 1 2 3 4 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 300 20 IC = 150 A VCE = 600 V 250 15 200 IC VGE 150 [A] 10 [V] 100 TVJ = 125°C 50 0 5 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 100 200 VGE [V] 35 500 600 22 RG = 4.7 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 25 400 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 30 300 QG [nC] 20 18 E 20 E [mJ] 15 [mJ] Eon 14 10 Eoff 5 0 Eoff 16 0 50 Erec 100 IC = 150 A VCE = 600 V VGE = ±15 V TVJ = 125°C Eon 12 150 200 250 300 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 10 0 2 4 6 8 10 12 14 16 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20110510b 5-6 MIXA150W1200TEH Inverter D1 - D6 Inverter Transistor & Diode 300 11 250 TVJ = 125°C 10 VR = 600 V 4.7 Ω 200 IC Erec 150 [A] 9 [mJ] 8 100 15 Ω TVJ = 125°C 50 7 TVJ = 25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 27 Ω 6 1600 1800 3.0 2000 VCE [V] 2200 2400 2600 diF /dt [A/µs] Fig.7 Typical forward characteristics Fig. 8 Typ. recovery energy Erec versus diF /dt NTC 1 100000 Diode 10000 IGBT ZthJC R 0.1 [K/W] IGBT 0.01 0.001 Ri 0.027 0.028 0.06 0.065 0.01 0.1 FRD ti 0.002 0.03 0.03 0.08 Ri 0.054 0.05 0.096 0.08 1 ti 0.002 0.03 0.03 0.08 10 t [s] Fig. 9 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 1000 [Ω] 100 10 0 25 50 75 100 125 150 TC [°C] Fig. 10 Typ. NTC resistance vs. temperature 20110510b 6-6