MIXA80WB1200TEH

MIXA80WB1200TEH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 265 A IC25 = 60 A IC25 = 120 A IFSM = 1100 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product) MIXA80WB1200TEH E72873 Pin configuration see outlines. 21 D11 D13 22 D7 D15 2 3 D12 D14 D16 D1 18 T1 15 7 1 16 T3 D3 17 T7 11 T2 D2 D5 T5 NTC 8 19 4 5 6 14 20 12 T4 D4 13 D6 T6 9 10 23 24 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • "E3-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting • Temperature sense included Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20160518e 1-9 MIXA80WB1200TEH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 120 84 A A TC = 25°C 390 W collector emitter saturation voltage IC = 77 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 3 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VGE = ±20 V TVJ = 25°C 1.8 2.1 5.4 6.0 6.5 V 0.03 0.6 0.2 mA mA 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 75 A 230 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 75 A VGE = ±15 V; RG = 10 W 70 40 250 100 6.8 8.3 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 10 W; SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 10 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 125°C TVJ = 125°C VCEK = 1200 V TVJ = 125°C 225 A 10 µs A 0.32 K/W 300 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1600 A/µs IF = 100 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ = 25°C 1200 V TC = 25°C TC = 80°C 135 90 A A IF = 100 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 1.95 1.95 2.2 V V TVJ = 125°C 12.5 100 350 4 µC A ns mJ 0.4 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20160518e 2-9 MIXA80WB1200TEH Brake T7 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 60 40 A A TC = 25°C 195 W collector emitter saturation voltage IC = 35 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 2.1 V V VGE(th) gate emitter threshold voltage IC = 1.5 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VGE = ±20 V typ. TVJ = 25°C 1.8 2.1 5.4 6.0 6.5 V 0.01 0.1 0.1 mA mA 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 35 A 107 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 27 W 70 40 250 100 3.8 4.1 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 27 W; SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current RthJC thermal resistance junction to case VCE = 900 V; VGE = ±15 V; RG = 27 W; non-repetitive TVJ = 125°C TVJ = 125°C VCEK = 1200 V TVJ = 125°C 105 A 10 µs A 0.64 K/W Ratings typ. max. Unit 140 Brake Chopper D7 Symbol Definitions Conditions VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 44 29 A A VF forward voltage IF = 30 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 1.95 1.95 2.2 V V IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C 0.01 0.15 0.1 mA mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy TVJ = 125°C 3.5 30 350 0.9 RthJC thermal resistance junction to case VR = 600 V diF /dt = 600 A/µs IF = 30 A; VGE = 0 V min. µC A ns mJ 1.2 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20160518e 3-9 MIXA80WB1200TEH Input Rectifier Bridge D11 - D16 TVJ = 25°C Ratings typ. max. 1600 Unit V sine 180° rect.; d = 1/3 TC = 80°C TC = 80°C 94 265 A A max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25°C TVJ = 125°C 1100 970 A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25°C TVJ = 125°C 6000 4700 A2s A2s Ptot total power dissipation TC = 25°C 250 W VF forward voltage IF = 150 A TVJ = 25°C TVJ = 125°C 1.3 1.3 1.6 V V IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C 0.05 2.0 0.1 mA mA RthJC thermal resistance junction to case (per diode) 0.5 K/W resistance Conditions min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K Definitions Conditions min. -40 Ratings typ. max. 125 150 125 Unit °C °C °C 3000 V~ Symbol VRRM Definitions max. repetitive reverse voltage Conditions IFAV IDAVM average forward current max. average DC output current IFSM min. Temperature Sensor NTC Symbol R25 B25/50 Definitions TC = 25°C Module Symbol TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index -40 IISOL < 1 mA; 50/60 Hz 200 Md mounting torque (M5) 3 dS dA creep distance on surface strike distance through air 6 6 Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink with heatsink compound Weight 6 Nm mm mm 5 mW 0.01 K/W 300 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 R0 Ratings typ. max. 0.87 2.7 Unit V mW TVJ = 150°C 1.1 17.9 V mW D1 - D6 TVJ = 150°C 1.09 9.1 V mW IGBT T7 TVJ = 150°C 1.1 40 V mW free wheeling diode D7 TVJ = 150°C 1.2 27.0 V mW Definitions rectifier diode Conditions D8 - D13 min. TVJ = 150°C V0 R0 IGBT T1 - T6 V0 R0 free wheeling diode V0 R0 V0 R0 TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20160518e 4-9 MIXA80WB1200TEH Circuit Diagram 21 D11 D13 22 D7 D15 2 3 D12 D14 D16 D1 18 T1 15 7 1 16 T3 D3 17 T7 11 T2 D2 D5 T5 NTC 8 19 4 5 6 14 20 12 T4 D4 13 D6 T6 9 10 23 24 Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Part number 2D Data Matrix XXX XX-XXXXX Logo UL Part number YYWWx Date Code Location Ordering Part Name Marking on Product Standard MIXA80WB1200 TEH MIXA80WB1200TEH IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved M = Module I = IGBT XA = XPT standard 80 = Current Rating [A] WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit 1200 = Reverse Voltage [V] T = NTC EH = E3-Pack Delivering Mode Base Qty Ordering Code Box 5 509112 20160518e 5-9 MIXA80WB1200TEH Inverter T1 - T6 140 IC [A] 140 VGE = 15 V 120 120 100 100 TVJ = 25°C 80 60 [A] 40 20 20 0.5 1.0 1.5 2.0 2.5 3.0 9V 60 40 0 0.0 0 0.0 3.5 11 V TVJ = 125°C IC 80 TVJ = 125°C 13 V VGE = 15 V 17 V 19 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 140 IC = 75 A VCE = 600 V 120 15 100 80 VGE [A] 60 [V] IC 40 5 TVJ = 125°C 20 0 10 TVJ = 25°C 5 6 7 8 9 10 11 12 0 13 0 50 100 150 16 9 10 E E 8 [mJ] 6 [mJ] 4 Eoff 0 0 20 40 Eoff 8 7 Eon IC = 75 A VCE = 600 V VGE = ±15 V TVJ = 125°C 6 Eon 2 300 10 RG = 10 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C 12 250 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. transfer characteristics 14 200 QG [nC] VGE [V] 60 80 100 120 140 160 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 5 8 10 12 14 16 18 20 22 24 RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20160518e 6-9 MIXA80WB1200TEH Inverter D1 - D6 24 200 TVJ = 125°C VR = 600 V 20 150 200 A Qrr 16 IF 100 [A] 100 A [µC] 12 TVJ = 125°C 50 TVJ = 25°C 0 0.0 0.5 1.0 50 A 8 1.5 2.0 2.5 4 1000 3.0 1200 1400 160 2000 2200 700 TVJ = 125°C 140 [A] 1800 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt Fig. 7 Typ. Forward current versus VF IRM 1600 diF /dt [A/µs] VF [V] 200 A 600 100 A 500 VR = 600 V 120 trr 50 A 100 TVJ = 125°C VR = 600 V 200 A 400 [ns] 300 80 100 A 200 60 50 A 100 40 1000 1200 1400 1600 1800 2000 0 1000 2200 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 1 8 200 A TVJ = 125°C VR = 600 V Diode 6 IGBT 100 A Erec ZthJC 0.1 4 [mJ] 50 A Inverter IGBT [K/W] Ri 2 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/µs] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 0.01 0.001 0.01 Inverter FRD ti Ri ti 1 0.072 0.002 0.092 0.002 2 0.037 0.03 0.067 0.03 3 0.156 0.03 0.155 0.03 4 0.055 0.08 0.086 0.08 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance 20160518e 7-9 MIXA80WB1200TEH Brake T7 & D7 70 60 VGE = 15 V 60 50 50 IC 40 [A] 30 40 IF TVJ = 25°C TVJ = 125°C 20 20 TVJ = 125°C 10 10 0 30 [A] 0 1 2 TVJ = 25°C 0 0.0 3 0.5 1.0 VCE [V] 1.5 2.0 2.5 3.0 VF [V] Fig. 14 Typ. forward characteristics Fig. 13 Typ. output characteristics 10 100000 10000 diode 1 ZthJC IGBT R [Ω] [K/W] Brake IGBT 0.1 0.01 0.001 0.01 Brake FRD Ri ti 1 0.152 0.002 2 0.0724 0.03 0.2171 0.03 3 0.0378 0.03 0.3475 0.03 4 0.1078 0.08 0.2941 0.08 0.1 Ri ti 100 0.3413 0.002 1 10 tP [s] Fig. 15 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 1000 10 0 25 50 75 100 125 150 TC [°C] Fig.16 Typ. NTC resistance vs. temperature 20160518e 8-9 MIXA80WB1200TEH Rectifier D11 - D16 200 10 4 900 TVJ = 125°C TVJ = 25°C 800 150 IFS M IF TVJ= 45°C TVJ = 45°C 700 I 2t 600 [A s ] 100 [A ] [A ] 50 2 TVJ = 150°C 500 0 0.0 0.5 1.0 1.5 50Hz, 80% VRRM 400 0.001 2.0 0.01 V F [V ] 0.1 P to t 1 2 3 4 5 6 7 8 91 0 t [m s ] 2 Fig. 2 Surge overload current vs. time per diode RthA: 0.1 K/W 0.3 K/W 0.6 K/W 1.0 K/W 1.5 K/W 2.5 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 60 10 3 1 t [s ] Fig. 1 Forward current vs. voltage drop per diode 80 TVJ= 150°C 40 Fig. 3 I t vs. time per diode 140 DC = 1 0.5 0.4 0.33 0.17 0.08 120 100 I d A V 80 [A ] 60 [W ] 40 20 20 0 0 10 20 30 40 50 60 70 0 20 I d A V M [A ] 40 60 80 100 120 140 160 0 0 25 50 T a m b [°C ] 75 100 125 150 T C [°C ] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.6 0.5 Constants for ZthJC calculation: 0.4 Z thJ C 0.3 i Rth (K/W) ti (s) [K /W ] 1 0.040 0.004 0.2 2 0.003 0.010 3 0.140 0.030 4 0.120 0.300 5 0.197 0.080 0.1 0.0 1 10 100 1000 10000 t [s ] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20160518e 9-9