MIXG240W1200PT-PC

MIXG240W1200PZTEH advanced VCES IC25 VCE(sat) X2PT IGBT Module = 1200 V = 312 A = 1.7 V 6-Pack + NTC + Shunt Part number MIXG240W1200PZTEH E72873 54-56 28-30 T1 T3 D1 46 D3 T5 49 D5 17 18 9 10 1 2 50 39 40 31 32 -dT NTC 51-53 RS1 45 T2 5 6 41-43 RS2 T4 D2 13 14 33-35 RS3 T6 D4 D6 21 22 59-61 23-25 Features / Advantages: Applications: Package: E3-Pack • X2PT - 2nd generation Xtreme light Punch Through • Tvjm = 175°C • Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged X2PT design results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic • Low VCE(sat) and low thermal resistance • SONIC2™ diode - fast and soft reverse recovery - low operating forward voltage • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • Inductive heating, cookers • Pumps, Fans • Isolation Voltage: 4300 V~ • Industry standard outline • RoHS compliant • Base plate: Copper internally DCB isolated • Advanced power cycling • PressFit pins Option: • Phase Change Material printed on base plate Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180403a 1-8 MIXG240W1200PZTEH advanced Inverter IGBT T1 - T6 Ratings Symbol Definitions Conditions min. IR = 500 µA TVJ = 25°C 1200 VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient gate emitter voltage IC25 IC80 IC100 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage on die level IC = 200 A; VGE = 15 V TVJ = 25°C TVJ = 150°C VGE(th) gate emitter threshold voltage IC = 8 mA; VGE = VGE TVJ = 25°C ICES collector emitter leakage current (includes diode reverse current) VCE = VCES ; VGE = 0 V TVJ = 25°C TVJ = 150°C IGES gate emitter leakage current VGE = ±20 V RG internal gate resistance Ciss Coss Crss input capacitance output capacitance reverse transfer (Miller) capacitance VCE = 100 V; VGS = 0 V; f = 1 MHz Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VCE = 600 V; VGE = 0 /15 V; IC = 200 A td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off RBSOA ICM reverse bias safe operating area VGE = ±15 V; RG = 3.9 Ω VCEmax = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit duration VCEmax = 1200 V VCE = 900 V; VGE = ±15 V non-repetitive RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup Inductive switching VCE = 680 V; IC = 200 A VGE = ±15 V; RG = 3.9 Ω (external) Inductive switching VCE = 680 V; IC = 200 A VGE = ±15 V; RG = 3.9 Ω (external) max. V -20 -30 IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved typ. +20 +30 V V TC = 25°C TC = 80°C TC = 100°C 312 233 200 A A A TC = 25°C 938 W 2 V V 7.5 V 0.15 mA mA 500 nA 1.7 2 6.0 2.5 6.5 Ω 10.6 nF pF pF 630 nC nC nC TVJ = 25°C 170 55 290 120 17.1 14.2 3.5 ns ns ns ns mJ mJ mJ TVJ = 150°C 180 70 360 215 23.5 20.5 9.2 ns ns ns ns mJ mJ mJ TVJ = 150°C TVJ = 150°C 400 A 10 µs A 0.16 K/W K/W 900 0.24 20180403a 2-8 MIXG240W1200PZTEH advanced Inverter Diode D1 - D6 Ratings Symbol Definitions Conditions min. VRRM max. repetitive reverse voltage IR = 500 µA, see VCES IF25 IF80 IF100 forward current VF forward voltage on die level IF = 150 A TVJ = 25°C TVJ = 150°C 1.7 1.65 IR reverse current * not applicable, see Ices at IGBT VR = VRRM TVJ = 25°C TVJ = 150°C TVJ = 25°C 1200 reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VCE = 600 V; IC = 150 A VGE = ±15 V; RG = 3.9 Ω (external) TVJ = 25°C QRM IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VCE = 600 V; IC = 150 A VGE = ±15 V; RG = 3.9 Ω (external) TVJ = 150°C RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink Shunt Resistor Symbol Definitions resistance RSHUNT V 189 136 114 A A A 2.0 1.95 V V * * mA mA 11.4 150 230 3.5 µC A ns mJ 25.3 170 420 9.2 µC A ns mJ 0.38 with heatsink compound; IXYS test setup Conditions min. TC = 25°C tolerance -1 thermal resistance shunt to heatsink max. 1200 TC = 25°C TC = 80°C TC = 100°C QRM IRM trr Erec RthSH typ. with heatsink compound; IXYS test setup * 0.48 K/W K/W Ratings typ. max. 0.5 +1 Unit mΩ % 10 K/W * Note: Continous shunt temperature should not exceed 170°C Temperature Sensor NTC Symbol Definitions Conditions min. typ. R25 resistance TVJ = 25°C 4.75 5.0 B25/50 temperature coefficient 3375 max. Unit 5.25 kΩ K 105 104 R [Ω] 103 102 0 25 50 75 100 T C [°C ] 125 150 Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180403a 3-8 MIXG240W1200PZTEH advanced Package Symbol IRMS E3-Pack Definitions Tstg Top TVJ storage temperature operation temperature virtual junction temperature Conditions per terminal RMS current min. Ratings typ. max. 30 Unit A -40 -40 -40 125 150 175 °C °C °C 6 Nm Weight 320 g MD mounting torque dSpp dSpb creepage distance on surface terminal to terminal terminal to backside 6 12 mm mm dApp dApb striking distance through air terminal to terminal terminal to backside 6 12 mm mm VISOL isolation voltage 4300 3600 V V Rpin-chip resistance pin to chip V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF CP coupling capacity per switch between shorted pins of switch and back side metallization 3 t = 1 second t = 1 minute 50 / 60 Hz, RMS; IISOL < 1 mA mΩ pF Part number M I X G 240 W 1200 PZT EH 2D Data Matrix XXX XX-XXXXX Logo UL Part number YYWWx Date Code Location = Module = IGBT = XPT IGBT = Gen 2 / std = Current Rating [A] = 6-pack = Reverse Voltage [V] = PressFit Pin + Shunt 0.5mΩ, Thermistor = E3-Pack Ordering Part Name Marking on Product Standard MIXG240W1200PZTEH MIXG240W1200PZTEH Blister 24 522740 MIXG240W1200PZTEH Blister 24 522733 with Phase MIXG240W1200PZTEH -PC Change Material Similar Part Delivering Mode Base Qty Package Ordering Code Voltage class MIXG240W1200TEH E3- Pack 1200 MIXG240W1200PTEH E3- Pack, press fit pin 1200 Option: phase change material; please contact IXYS sales office for availability Equivalent Circuits for Simulation I V0 *on die level R0 V0 max threshold voltage R0 max slope resistance * V0 max threshold voltage R0 max slope resistance * IGBT V TVJ = 125°C TVJ = 175°C IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved Inverter Diode mΩ 1.2 1.2 V 5.8 4.7 mΩ 20180403a 4-8 MIXG240W1200PZTEH advanced Outlines E3-Pack 18,3 ±0,3 1,1 17 ±0,5 20,6 ±0,5 A Detail A Vor der Montage typ. 100 µm konvex über 97.5 mm Before mounting typ. 100 µm convex over 97.5 mm Ø 4,5 Ø 2,5 -0.3 B (3:1) 0,8 Ø 2,1 -0.3 81,67 85,48 89,29 93,10 96,91 Gabelbreite / pin width B 1 2 3 4 5 6 7 8 9 58,4 38,33 34,52 30,71 50 ±0,2 23 24 25 26 27 28 29 30 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 61 60 59 58 57 56 55 54 0 57,5 ±0,2 62 ±0,3 53 52 51 50 49 2,62 ±0,04 51,19 55,00 58,81 62,62 66,43 39,76 43,57 13,09 16,90 20,71 24,52 28,33 6 1,5 +0.3 118,1 110 ±0,2 19,28 15,47 11,66 10 11 12 13 14 15 16 17 18 19 20 21 22 91,20 95,01 75,96 79,77 60,72 64,53 45,48 49,29 30,24 34,05 0 15,00 18,81 Ø 5,5 +0,1/-0,3 94,5 ±0,2 122 ±0,3 Bemerkung / Note: - Nichttolerierte Maße nach / Measure without tolerances according DIN ISO 2768-T1-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: 0.1 - Bohrlochdurchmesser / Diameter of drill: Ø 2.35 mm - Endlochdurchmesser / Diameter of plated holes: Ø 2.14 - 2.29 mm (Cu thickness in via typ. 50 µm) - Beschichtung / Plating: chem. Sn max. 15 µm - Einpresskraft / Insert Force: per terminal with a typ. insert speed of 7 mm/s: typ. 90 N - Weitere Angaben / Further information: www.ixys.com Application note IXAN0077 - Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024 Detail A : PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT® PT (Größe / size: K25 K25) - Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / Recommended mounting torque: 1.5 Nm 54-56 28-30 T1 T3 D1 1 2 46 D3 T5 49 D5 17 18 9 10 50 39 40 31 32 -dT NTC 51-53 RS1 45 T2 5 6 T4 D2 13 14 59-61 IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 41-43 RS2 33-35 RS3 T6 D4 D6 21 22 23-25 20180403a 5-8 MIXG240W1200PZTEH advanced IGBT T1 - T6 400 400 VGE = 19 V 17 V 15 V VGE = 19 V 17 V 15 V 13 V 300 13 V 300 IC 11 V IC 200 200 11 V [A] [A] 100 100 9V 9V 0 0 0 1 2 3 4 0 1 2 3 4 VCE [V] VCE [V] Fig. 1 Typ. output characteristics (TVJ = 25°C) Fig. 2 Typ. output characteristics (TVJ = 150°C) 400 400 300 300 TVJ = 25°C IC IC 200 TVJ = 150°C [A] 200 TVJ = 150°C [A] 100 100 TVJ = 25°C 0 0 0 1 2 3 5 6 7 VCE [V] 10 11 12 13 Fig. 4 Typ. tranfer characteristics (VCE = 20V) 15 15 VCE 9 VGE [V] Fig. 3 Typ. output characteristics (VGE = 15V) IC 8 = 200 A = 600 V IC = 200 A VCE = 600 V 10 12 5 9 VGE [V] VGE 6 0 [V] -5 3 -10 0 -15 0 200 400 600 QG [nC] Fig. 5 Typ. turn-on gate charge 0/15V IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 0 200 400 600 800 QG [nC] Fig. 6 Typ. turn-on gate charge -15/+15V 20180403a 6-8 MIXG240W1200PZTEH advanced IGBT T1 - T6 70 R = 3.9 Ω V = 600 V G 60 V 50 T CE GE VJ 280 40 240 td(on) 200 = 150°C E 30 tr [mJ] = 600 V 700 30 = ±15 V 600 25 10 Erec (off) 120 td(off) tf 10 40 5 0 0 [ns] 300 200 100 Eoff 0 400 0 50 100 150 200 250 300 350 400 450 IC [A] 30 600 td(off) 25 300 td(on) 500 E Eon [ns] Erec(off) 400 IC = 200 A VCE = 600 V VGE = ±15 V TVJ = 150°C [mJ] 200 [mJ] Eoff 20 t 20 15 100 0 6 8 10 12 14 0 16 [ns] tf 5 2 4 RG [Ω] 6 8 10 t 300 10 tr 4 t Fig. 8 Typ. switching energy versus collector current (turn off) 40 2 500 15 Fig. 7 Typ. switching energy versus collector current (turn on) 10 VJ = 150°C 400 IC [A] E GE [mJ] [ns] 50 100 150 200 250 300 350 400 450 IC = 200 A VCE = 600 V VGE = ±15 V 30 T = 150°C VJ CE 20 80 Eon 0 V V E t 0 35 T 160 40 20 = 3.9 Ω G = ±15 V 800 R 12 14 200 100 16 RG [Ω] Fig. 10 Typ. switching energy versus gate resistor (turn off) Fig. 9 Typ. switching energy versus gate resistor (turn on) 0.3 0.2 ZthJH [K/W] Ri ti 0.054 0.002 0.05 0.03 0.096 0.03 0.08 0.08 0.1 0.0 1 10 100 1000 10000 tp [ms] Fig. 11 IGBT: typ. transient thermal impedance to heat sink IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180403a 7-8 MIXG240W1200PZTEH advanced DIODE D1 - D6 300 300 250 600 33 Ω 15 Ω 250 500 8.2 Ω Irr 200 trr 200 IF 150 [A] [A] 15 Ω 150 50 100 0.5 1.0 1.5 2.0 50 1500 2.5 VF [V] Fig. 12 Typ. forward charakteristics FWD 200 [ns] 300 TVJ = 150°C IRR VR = 600V If = 200A TVJ = 25°C 0 0.0 3.9 Ω 33 Ω 100 TVJ = 150°C 8.2 Ω trr 400 2000 2500 3000 200 100 3500 diF /dt [A/μs] Fig. 13 Typ. recovery energy Erec (off) versus -di/dt 60 TVJ = 150°C VR = 600V RG = 3.9 Ω 180 50 160 40 IRR QRR 140 QRR 30 [μC] [A] IRR 120 20 100 0 50 100 150 200 250 10 300 IF [A] Fig. 14 typ. reverse recovery characteristics 0.5 0.4 ZthJH 0.3 [K/W] 0.2 0.1 0.0 1 10 100 1000 10000 tp [ms] Fig. 15 Diode: typ. transient thermal impedance junction to heat sink IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180403a 8-8