MIXG360RF1200P-PC

MIXG360RF1200PTED XPT IGBT Module VCES = 1200 V I C25 = 532 A VCE(sat) = 1.7 V Boost/Brake Chopper + free wheeling Diode + NTC Part number MIXG360RF1200PTED Backside: isolated 15-18 27-32 46 49 48 47 2-7 Features / Advantages: Applications: Package: E2-Pack ● X2PT - 2nd generation Xtreme light Punch Through ● Rugged X2PT design results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic ● Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● PressFit-Pins for PCB mounting ● Height: 17 mm ● Base plate: Copper internally DCB isolated ● Advanced power cycling ● Phase Change Material available Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128b MIXG360RF1200PTED Ratings Free Wheeling Diode FWD Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR VF min. typ. max. Unit 1200 V V reverse current, drain current VR = 1200 V TVJ = 25°C * µA * not applicable, see Ices at IGBT VR = 1200 V TVJ = 150°C * mA forward voltage drop IF = 20 A TVJ = 25°C 1.82 V IF = 40 A 2.20 V IF = 20 A 1.69 V IF = 40 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TVJ = 150 °C TC = 80 °C rectangular 2.20 V T VJ = 175 °C 52 A TVJ = 175 °C 1.20 V 23 mΩ d = 0.5 for power loss calculation only 0.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 600 V f = 1 MHz TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2017 IXYS all rights reserved K/W 0.10 TC = 25°C 150 150 16 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20171128b MIXG360RF1200PTED Ratings Boost IGBT Symbol VCES Definition Conditions min. VGES max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TVJ = collector emitter voltage I C80 532 A TC = 80 °C 400 A 1870 W 2 V TC = 25°C total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 12 mA; VGE = VCE TVJ = 25°C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 150 °C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 300 A t d(on) turn-on delay time current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I C = 300 A; VGE = 15 V inductive load TVJ = 25°C 1.7 TVJ = 150 °C 2 6.5 TVJ = 150 °C VGE = ±15 V; R G = 2.2 Ω SCSOA short circuit safe operating area VCEmax = 1200 V t SC short circuit duration VCE = 800 V; VGE = ±15 V I SC short circuit current R G = 2.2 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink V 7.5 V 0.1 mA 1 mA 500 VCE = 600 V; IC = 300 A VGE = ±15 V; R G = 2.2 Ω 5.5 nA 1040 nC 280 ns 100 ns 450 ns 200 ns 50 mJ 30 mJ TVJ = 150 °C VCEmax = 1200 V I CM max. Unit 1200 V TC = 25°C Ptot tr typ. 25°C TVJ = 150 °C 800 A 10 µs A 1200 0.08 K/W K/W 0.05 Boost Diode BD VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V IF25 forward current TC = 25°C 390 A TC = 80 °C 285 A 2.20 V IF 80 VF forward voltage I F = 300 A TVJ = 25°C = 150 °C IR reverse current Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2017 IXYS all rights reserved VR = VRRM TVJ TVJ = 25°C TVJ = 150 °C VR = 600 V -di F /dt = 3500 A/µs IF = 300 A; VGE = 0 V TVJ = 150 °C 1.90 V 0.6 mA 6 mA 40 µC 240 A 350 ns 9.5 mJ 0.14 K/W 0.06 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20171128b MIXG360RF1200PTED Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 30 Unit A -40 175 °C -40 150 °C 125 °C 176 Weight MD d Spp/App 3 mounting torque t = 1 minute Rpin-chip 2D Data Matrix terminal to backside 12.0 mm 3600 V 3000 V M I X G 360 RF 1200 PT ED UL Part number Date Code Location Ordering Standard Alternative 50/60 Hz, RMS; IISOL ≤ 1 mA 2.5 Ordering Number MIXG360RF1200PTED MIXG360RF1200PTED-PC Similar Part MIXG240RF1200PTED mΩ Part description XXXXXXXXXX yywwx Logo Nm mm V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF resistance pin to chip 6 6.0 t = 1 second isolation voltage g terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. = = = = = = = = = Module IGBT XPT IGBT Gen 2 / std Current Rating [A] Boost/Brake Chopper + free wheeling Diode Reverse Voltage [V] PressFit-Pin, Thermistor E2-Pack Marking on Product MIXG360RF1200PTED MIXG360RF1200PTED Package E2-Pack Delivery Mode Blister Blister Quantity 28 28 Code No. 520530 Voltage class 1200 105 Temperature Sensor NTC Symbol Definition Conditions R25 resistance TVJ = 25° B25/50 temperature coefficient min. 4.85 typ. 5 3375 max. Unit 5.15 kΩ K 104 R [ ] 103 102 0 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, conditions and dimensions. © 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128b MIXG360RF1200PTED A Vor der Montage typ. 100 µm konvex über 75 mm Before mounting typ. 100 µm convex over 75 mm Detail C (5:1) Detail A Gabelbreite / pin width 0,8 Ø 2,5 -0,3 Ø 2,1 -0,3 1,5 +0,3 6 Ø6 18,3 ±0,3 1,1 17 ±0,5 20,6 ±0,5 Outlines E2-Pack 79,2 57,93 61,74 65,55 69,36 73,17 76,98 0 C 46 24 47 23 11,43 7,62 0 22 49 21 2 3 4 5 6 7 8 20 9 1 0 11 12 13 14 15 16 17 18 19 16,02 19,83 23,64 27,45 31,26 35,07 6,90 1 7,62 11,43 86,10 50 65,55 69,36 73,17 76,98 Index 48 41,90 Ø 5,5 +0,1 - 0,3 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 45 25 11 45 ±0,2 32 ±0,2 2,62 ±0,04 93 ±0,2 107,5 ±0,3 Bemerkung / Note: - Nicht tolerierte Maße nach / Measure without tolerances according DIN ISO 2768-T1-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: 0.1 - Bohrlochdurchmesser / Diameter of drill: Ø 2.35 mm - Endlochdurchmesser / Diameter of plated holes: Ø 2.14 - 2.29 mm (Cu thickness in via typ. 50 µm) - Beschichtung / Plating: chem. Sn max. 15 µm - Einpresskraft / Insert Force: per terminal with a typ. insert speed of 7 mm/s: typ. 90 N - Weitere Angaben / Further information: www.ixys.com Application note IXAN0077 - Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024 Detail A: PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT® (Größe / size: K25) - Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / Recommended mounting torque: 1.5 Nm 15-18 27-32 46 49 48 47 2-7 IXYS reserves the right to change limits, conditions and dimensions. © 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128b MIXG360RF1200PTED Boost IGBT 600 600 500 500 150°C 400 25°C 13 V VCE = 20 V 500 TVJ = 150°C 400 IC 600 VGE = 19 V 17 V 15 V 400 11 V IC 300 IC 300 300 [A] [A] [A] 200 200 100 100 0 0.0 1.0 1.5 2.0 2.5 3.0 1 2 175 350 td(on) 150 300 125 250 4 6 5 200 70 RG = 2.2 Ohm VCE = 600 V VGE = ±15 V TVJ = 150°C 60 50 600 600 500 500 td(off) 40 t 400 150 [ns] 30 300 200 [ns] 100 20 25 50 10 tf Eon 0 100 200 300 400 500 600 700 320 14 280 12 Irr 10 Erec Irr 8 160 6 120 4 2 150°C 300 [A] 0 0.0 IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current 15.0 TVJ = 150°C VR = 600 V IF = 300 A 12.5 10.0 Erec 0.24 250 0.20 Irr 7.5 Irr 150 [A] 0.5 1.0 1.5 2.0 2.5 3.0 VF [V] Fig. 6 Typ. forward characteristics Diode 300 200 Erec 25°C 100 0 100 200 300 400 500 600 700 [A] [mJ] [mJ] 13 400 240 200 10 11 12 IF Eoff 0 Fig. 4 Typ. turn-on energy & switch. times vs. collector current RG = 2.2 Ohm VR = 600 V TVJ = 150°C 100 0 IC [A] 16 9 200 50 0 8 Fig. 3 Typ. transfer charact. IGBT 700 tr [mJ] tr [mJ] 0 7 VGE [V] Fig.2 Typ. output characteristics IGBT Eoff RG = 2.2 Ohm VCE = 600 V VGE = ±15 V TVJ = 150°C 75 3 VCE [V] Fig.1 Typ. output characteristics IGBT 100 100 0 0 VCE [V] Eon 25°C 9V 0 0.5 150°C 200 Diode Ri it 0.008 0.001 0.035 0.020 0.065 0.120 0.092 0.750 IGBT Ri ti 0.005 0.001 0.026 0.022 0.041 0.240 0.058 0.650 Diode 0.16 ZthJH IGBT 0.12 [K/W] 5.0 100 0.08 2.5 50 0.04 80 Erec 0 0 40 0 100 200 300 400 500 600 0.0 0 2 4 6 8 0 10 12 14 16 0.00 IF [A] RG [Ohm] 0.1 t [s] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode Fig. 9 Typ. transient thermal resistance juntion to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2017 IXYS all rights reserved 0.001 0.01 Data according to IEC 60747and per semiconductor unless otherwise specified 1 10 20171128b