MKI100-12F8

MKI 100-12F8 Advanced Technical Information IC25 = 125 A = 1200 V VCES VCE(sat) typ. = 3.3 V IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 1 9 2 10 3 4 14, 20 12 19 15 11 MKI Features IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 1200 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 125 85 A A ICM VCEK VGE = ±15 V; RG = 5.6 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH 200 VCES A tSC VCE = 900 V; VGE = ±15 V; RG = 5.6 Ω; TVJ = 125°C SCSOA; non-repetitive 10 µs Ptot TC = 25°C 640 W Symbol Conditions • Fast NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical Applications Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 4 mA; VGE = VCE ICES VCE = VCES; IGES td(on) tr td(off) tf Eon Eoff VGE = 0 V; 3.3 4.0 4.5 TVJ = 25°C TVJ = 125°C Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = ±15 V; IC = 100 A RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved V V 6.5 V 1.3 mA mA 600 nA 4.0 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 5.6 Ω 3.9 130 60 365 30 12.0 5.0 ns ns ns ns mJ mJ 6.5 1.1 nF µC 0.19 K/W 451 VCE(sat) - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger 1-2 MKI 100-12F8 Advanced Technical Information Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 200 130 Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.3 1.7 IRM trr IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 82 200 RthJC (per diode) Conduction A A 2.6 V V A ns 0.3 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 2.05 V ; R0 = 19.5 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.27 V; R0 = 4.3 mΩ Thermal Response Module Conditions TVJ TJM Tstg operating VISOL Maximum Ratings -40...+125 +150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 3-6 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight pins 5, 6, 7, 8 and 17 for MWI only © 2004 IXYS All rights reserved 10 10 IGBT (typ.) Cth1 = 0.409 J/K; Rth1 = 0.14 K/W Cth2 = 2.203 J/K; Rth2 = 0.05 K/W Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.24 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W mΩ mm mm 0.01 K/W 300 g Dimensions in mm (1 mm = 0.0394") 451 Symbol 2-2