MKI50-12F7

MKI 50-12F7 Advanced Technical Information IC25 = 65 A = 1200 V VCES VCE(sat) typ. = 3.2 V IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA 13 1 9 2 10 16 14 3 11 4 17 12 MKI Features IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 13 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH tSC VCE = 900 V; VGE = ±15 V; RG = 13 Ω; TVJ = 125°C SCSOA; non-repetitive Ptot TC = 25°C Symbol Conditions 1200 V ± 20 V 65 45 A A 100 VCES A 10 µs 350 W • Fast NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate - UL registered, E 72873 Typical Applications Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; IGES td(on) tr td(off) tf Eon Eoff VGE = 0 V; 3.2 3.8 4.5 TVJ = 25°C TVJ = 125°C 3.8 V V 6.5 V 0.7 mA mA 500 nA 2.5 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 13 Ω 130 60 360 30 6.0 2.5 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A 3.3 600 nF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 0.35 K/W 414 VCE(sat) - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger 1-2 MKI 50-12F7 Advanced Technical Information Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 110 70 Symbol Conditions Characteristic Values min. typ. max. VF IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.2 1.6 IRM trr IF = 50 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 40 200 RthJC (per diode) Conduction A A 2.6 V V A ns 0.61 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 2.05 V; R0 = 35 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 6 mΩ Thermal Response Module Symbol Conditions TVJ TVJM Tstg operating VISOL Maximum Ratings -40...+125 -40...+150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 5 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight 6 6 IGBT (typ.) Cth1 = 0.22 J/K; Rth1 = 0.26 K/W Cth2 = 1.74 J/K; Rth2 = 0.09 K/W Free Wheeling Diode (typ.) Cth1 = 0.151 J/K; Rth1 = 0.483 K/W Cth2 = 1.003 J/K; Rth2 = 0.127 K/W mΩ mm mm 0.02 K/W 180 g Dimensions in mm (1 mm = 0.0394") 414 pins 5, 6, 7, 8 and 15 for MWI only © 2004 IXYS All rights reserved 2-2