MMIX1T132N50P3

Advance Technical Information MMIX1T132N50P3 Polar3TM Power MOSFET Current & Temperature Sensing VDSS ID25 RDS(on) = =  500V 63A  43m (Electrically Isolated Tab) A1 A2 SR N-Channel Enhancement Mode Avalanche Rated SR D Test Conditions VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM Maximum Ratings IA EAS 63 A 330 A TC = 25C TC = 25C 66 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 520 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 2500 V~ 50..200 / 11..45 N/lb. 8 g Weight Isolated Tab D SR CS CC G CS GR S SR A1 A2 CC D   BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  V 5.0 V 200 nA Note 2, TJ = 125C VGS = 10V, ID = 66A, Note 1 50 A 3 mA   Easy to Mount Space Savings Applications     © 2016 IXYS CORPORATION, All Rights Reserved Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated Low Package Inductance Current Mirror for MOSFET Source & Sensing Integrated Diodes for Sensing MOSFET Temperature Low RDS(on) Advantages  43 m - Gate - Current Sense - Gate Return - Source - Sense Current Return - Anode 1 - Anode 2 - Common Cathode - Drain Features  Characteristic Values Min. Typ. Max. GR SR A2 A1  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) G S  RDS(on) GR G CC CS SR Symbol TJ TJM Tstg S DC-DC Converters AC-DC Converters PFC Connect / Disconnect Load Inrush Current Control DS100695(01/16) MMIX1T132N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 68 VDS = 10V, ID = 66A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 110 S 18.6 nF 1710 pF 12 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 1.16 Qgs ns 19 ns 90 ns 15 ns 267 nC RG = 1 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 66A 95 nC 63 nC 0.05 30 0.24 C/W C/W C/W Qgd RthJC RthCS RthJA  42 VGS = 10V, VDS = 0.5 • VDSS, ID = 66A Qg(on)  Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 132 A ISM Repetitive, Pulse Width Limited by TJM 530 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 66A, -di/dt = 100A/s Notes: 600 12 40 VR = 100V, VGS = 0V ns C A 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Part must be heatsunk for high-temp IDSS measurement. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX1T132N50P3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 250 140 VGS = 10V 8V 120 VGS = 10V 8V 200 7V I D - Amperes I D - Amperes 100 80 60 40 150 7V 100 6V 50 6V 20 5V 5V 0 0 0 1 2 3 4 5 0 6 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 66A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 140 3.2 VGS = 10V VGS = 10V 120 2.8 7V RDS(on) - Normalized I D - Amperes 100 80 6V 60 40 20 I D = 132A 2.0 I D = 66A 1.6 1.2 0.8 5V 0 0.4 0 3.0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 66A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 70 VGS = 10V 60 TJ = 125ºC 2.6 50 2.2 I D - Amperes RDS(on) - Normalized 2.4 1.8 TJ = 25ºC 1.4 40 30 20 1.0 10 0 0.6 0 50 100 150 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 200 250 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 MMIX1T132N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 200 160 TJ = - 40ºC 180 140 160 TJ = 125ºC 25ºC - 40ºC 100 25ºC 140 g f s - Siemens I D - Amperes 120 80 60 120 125ºC 100 80 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 Fig. 10. Gate Charge 300 10 VDS = 250V 9 250 I D = 66A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 80 I D - Amperes 150 TJ = 125ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 VSD - Volts 120 160 200 240 280 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 Ciss RDS(on) Limit 10,000 100 1,000 100µs I D - Amperes Capacitance - PicoFarads 80 Coss 100 10 TJ = 150ºC 10 TC = 25ºC Single Pulse Crss f = 1 MHz 1 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 MMIX1T132N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 14. Resistive Turn-on Rise Time vs. Junction Temperature 28 30 RG = 1Ω , VGS = 10V 26 Fig. 15. Resistive Turn-on Rise Time vs. Drain Current RG = 1Ω , VGS = 10V 28 VDS = 250V VDS = 250V 26 t r - Nanoseconds t r - Nanoseconds 24 22 I D = 66A 20 18 I D = 100A 24 TJ = 125ºC 22 20 18 TJ = 25ºC 16 16 14 14 12 12 10 25 35 45 55 65 75 85 95 105 115 30 125 40 50 60 TJ - Degrees Centigrade Fig. 16. Resistive Turn-on Switching Times vs. Gate Resistance 300 tr 250 120 24 100 22 td(on) - - - - TJ = 125ºC, VGS = 10V tf 60 I D = 66A 100 40 50 20 0 0 3 4 5 6 7 RG - Ohms © 2016 IXYS CORPORATION, All Rights Reserved 8 9 10 td(off) - - - - 100 115 110 RG = 1Ω, VGS = 10V VDS = 250V 20 t f - Nanoseconds t r - Nanoseconds I D = 100A 2 90 105 18 100 I D = 100A 16 95 14 90 I D = 66A 12 85 10 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 80 125 t d ( o f f ) - Nanoseconds 80 t d ( o n ) - Nanoseconds 200 1 80 Fig. 17. Resistive Turn-off Switching Times vs. Junction Temperature VDS = 250V 150 70 I D - Amperes MMIX1T132N50P3 Fig. 18. Resistive Turn-off Switching Times vs. Drain Current tf 30 130 300 120 250 td(off) - - - - tf RG = 1Ω, VGS = 10V t f - Nanoseconds 110 TJ = 125ºC 20 100 15 90 40 50 60 70 80 90 200 320 150 240 I D = 66A 80 50 80 70 100 0 0 1 2 3 4 5 6 7 8 9 10 RG - Ohms I D - Amperes Fig. 20. Forward Current vs. Forward Voltage of Temp. Sensing Diode 10 400 I D = 100A VDS = 250V 160 10 30 td(off) - - - - TJ = 125ºC, VGS = 10V 100 TJ = 25ºC 5 480 t d ( o f f ) - Nanoseconds 25 t d ( o f f ) - Nanoseconds VDS = 250V t f - Nanoseconds 35 Fig. 19. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 21. Forward Voltage of Temp. Sensing Diode vs. Junction Temperature 1.1 9 TJ = 175ºC 150ºC 125ºC 100ºC 75ºC 50ºC 25ºC 0ºC - 25ºC - 50ºC 7 6 5 4 1.0 I F = 10mA 0.9 VF - Volts I F - MilliAmperes 8 0.8 I F = 1mA 0.7 3 2 0.6 1 0 0.5 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -50 -25 0 25 VF - Volts Fig. 22. Delta Forward Voltage of Temp. Sensing Diode vs. Junction Temperature 195 100 125 150 175 Fig. 23. Current Mirror vs. Source Current TJ = - 50ºC 25ºC 150ºC Current Mirror - MilliAmperes 700 185 dVF - MilliVolts 75 800 dIF = 10mA - 1mA 190 50 TJ - Degrees Centigrade 180 175 170 165 600 ---- RCS = 0Ω 500 400 300 200 100 0 160 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade 0 20 40 60 80 100 120 140 160 I S - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: MMIX1_132N50P3(K9) 1-18-16-A MMIX1T132N50P3 G CS GR S SR A1 A2 CC D © 2016 IXYS CORPORATION, All Rights Reserved - Gate - Current Sense - Gate Return - Source - Sense Current Return - Anode 1 - Anode 2 - Common Cathode - Drain Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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