MMIX4B20N300

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 (Electrically Isolated Tab) VCES = 3000V IC110 = 14A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 34 A IC110 TC = 110°C 14 A ICM TC = 25°C, VGE = 19V, 1ms 10ms 150 74 A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load ICM = 130 1500 A V PC TC = 25°C 150 W TJ G4 E3E4 C1 G1 E1C3 G3 Isolated Tab E2C4 G2 C2 G3 E1C3 G1 C1 G = Gate C = Collector -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features 300 260 °C °C z 50..200 / 11..45 Nm/lb.in. 4000 V~ 8 g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds FC Mounting Force VISOL 50/60Hz, 1 Minute Weight z z z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 3000 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved 3.2 E = Emitter Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages V 2.7 E3E4 G4 5.0 V 35 1.5 μA mA ±100 nA 3.2 V V z z Low Gate Drive Requirement High Power Density Applications z z Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits DS100432A(06/12) MMIX4B20N300 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 20A, VCE = 10V, Note 1 11 Cies 18 S 2230 pF 92 pF Cres 33 pF Qg 105 nC 13 nC 45 nC Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 20A, VGE = 15V, VCE = 1000V Qgc td(on) tr td(off) tf td(on) tr td(off) tf Resistive Switching Times, TJ = 25°C IC = 20A, VGE = 15V VCE = 1250V, RG = 10Ω Resistive Switching Times, TJ = 125°C IC = 20A, VGE = 15V VCE = 1250V, RG = 10Ω 64 ns 210 ns 300 ns 504 ns 68 ns 540 ns 300 ns 395 ns RthJC 0.83 °C/W 0.05 30 RthCS RthJA °C/W °C/W Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 20A, VGE = 0V 2.1 trr IF = 10A, VGE = 0V, -diF/dt = 100A/μs IRM VR = 100V, VGE = 0V V 1.35 μs 30 A Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX4B20N300 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 40 300 VGE = 25V 20V 15V 35 VGE = 25V 20V 250 200 25 IC - Amperes IC - Amperes 30 10V 20 15 15V 150 100 10V 10 50 5 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 14 16 18 20 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 40 1.8 VGE = 25V 20V 15V 35 VGE = 15V 1.6 I VCE(sat) - Normalized 30 IC - Amperes 12 VCE - Volts VCE - Volts 25 20 10V 15 10 C = 40A 1.4 I C = 20A 1.2 1.0 I C = 10A 0.8 5 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 50 5.5 45 TJ = 25ºC 5.0 40 4.5 I 3.5 C IC - Amperes VCE - Volts 35 4.0 = 40A 3.0 20A 30 25 TJ = 125ºC 25ºC - 40ºC 20 15 2.5 10 10A 2.0 5 1.5 0 5 7 9 11 13 15 17 19 21 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 23 25 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 MMIX4B20N300 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 60 28 TJ = - 40ºC 24 50 25ºC 40 125ºC 16 IF - Amperes g f s - Siemens 20 12 30 TJ = 25ºC TJ = 125ºC 20 8 10 4 0 0 0 5 10 15 20 25 30 35 40 45 50 55 0 0.5 1 1.5 IC - Amperes 2.5 3 Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 16 f = 1 MHz VCE = 1kV 14 I C = 20A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts 2 VF - Volts 10 8 6 4 Cies 1,000 Coes 100 2 Cres 0 10 0 10 20 30 40 50 60 70 80 90 100 0 110 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 1 140 120 D = 0.50 Z(th)JC - ºC / W IC - Amperes 100 80 60 40 20 D = 0.20 0.1 D = 0.10 tp TJ = 125ºC RG = 20Ω dv / dt < 10V / ns D = 0.02 T D = 0.01 0 250 D = tp / T D = 0.05 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 0.01 0.000001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.00001 Single Pulse 0.0001 0.001 0.01 Pulse Width - Seconds 0.1 1 10 MMIX4B20N300 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 700 700 VCE = 1250V 600 VCE = 1250V 500 I 400 300 C I t r - Nanoseconds t r - Nanoseconds RG = 10Ω , VGE = 15V RG = 10Ω , VGE = 15V 600 = 20A C = 40A TJ = 125ºC 500 400 300 200 200 100 100 TJ = 25ºC 0 0 25 35 45 55 65 75 85 95 105 115 10 125 15 20 25 TJ - Degrees Centigrade 850 200 600 140 I C = 20A, 40A 120 600 100 550 80 500 60 450 20 30 40 50 60 70 500 400 290 300 270 100 25 80 35 45 55 65 75 85 95 105 115 230 125 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 1200 600 460 td(off) - - - - 1600 tf 550 420 RG = 10Ω, VGE = 15V 600 340 400 300 200 260 t d(off) - Nanoseconds 380 1400 1200 VCE = 1250V 450 1000 400 I C 800 = 20A 350 600 I C = 40A 300 400 250 t d(off) - Nanoseconds 500 800 td(off) - - - - TJ = 125ºC, VGE = 15V t f - Nanoseconds tf VCE = 1250V t f - Nanoseconds 250 I C = 40A RG - Ohms 1000 310 I C = 20A 200 40 10 330 VCE = 1250V t d(off) - Nanoseconds 700 td(off) - - - - RG = 10Ω, VGE = 15V 160 VCE = 1250V 650 350 tf 180 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 750 40 700 t f - Nanoseconds tr 35 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 800 30 IC - Amperes 200 TJ = 125ºC, 25ºC 0 220 10 15 20 25 30 35 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 40 200 0 10 20 30 40 50 60 70 80 RG - Ohms IXYS REF: MMIX4B20N300(5P)6-05-12-B MMIX4B20N300 Package Outline IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.