MMIX4G20N250

High Voltage IGBT For Capacitor Discharge Applications MMIX4G20N250 C1 ( Electrically Isolated Tab) H-Bridge Configuration G1 E1C3 VCES = 2500V IC25 = 23A VCE(sat)  3.1V C2 Q1 Q2 Q3 Q4 G2 E2C4 C2 G2 E2C4 G4 E3E4 G3 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1M 2500 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 23 A IC90 TC = 90°C 14 A ICM TC = 25°C, VGE = 19V, 1ms 10ms 105 55 A A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 60 A (RBSOA) Clamped Inductive Load 1500 V PC TC = 25°C 100 W -55 ... +150 °C TJ Maximum Ratings TJM 150 °C Tstg -55 ... +150 °C 260 °C 50..200 / 11..45 Nm/lb.in. 4000 V~ 8 g TSOLD Plastic Body for 10 seconds FC Mounting Force VISOL 50/60Hz, 1 Minute G3 Isolated Tab E2C4 G2 E1C3 G1 C1 G = Gate C = Collector Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 2500 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 20A, VGE = 15V, Note 1 © 2021 Littelfuse, Inc. E = Emitter Features      Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C2 G3  Weight E3E4 G4 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages V 5.0 V 10 750 A A ±100 nA 3.1 V  High Power Density Easy to Mount  Applications   Capacitor Discharge Pulser Circuits DS100278C(03/21) MMIX4G20N250 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs IC = 20A, VCE = 10V, Note 1 IC(ON) VGE = 20V, VCE = 15V, Note 1 Characteristic Values Min. Typ. Max. 8 13 S 190 A 1190 pF 53 pF Cres 18 pF Qg 53 nC 8 nC 22 nC 57 ns 160 136 ns ns 930 ns 0.05 30 1.25 °C/W °C/W °C/W Cies Coes Qge VCE = 15V, VGE = 20V, f = 1MHz IC = 20A, VGE = 15V, VCE = 1000V Qgc td(on) Resistive Switching Times tr td(off) IC = 40A, VGE = 15V tf VCE = 1250V, RG = 10 RthJC RthCS RthJA Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 MMIX4G20N250 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 80 240 VGE = 25V 19V 15V 13V 70 VGE = 25V 23V 200 21V 19V 160 11V 50 I C - Amperes IC - Amperes 60 40 9V 30 17V 15V 120 13V 80 11V 20 7V 40 10 9V 5V 7V 0 0 0 1 2 3 4 5 6 0 10 15 20 25 VCE - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. Dependence of VCE(sat) on Junction Temperature 30 2.4 80 VGE = 25V 21V 17V 15V VGE = 15V 2.2 2.0 13V 60 VCE(sat) - Normalized 70 IC - Amperes 5 VCE - Volts 11V 50 40 9V 30 20 7V I C = 80A 1.8 1.6 1.4 I C = 40A 1.2 1.0 0.8 10 I C = 20A 0.6 5V 0 0.4 0 1 2 3 4 5 6 7 8 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 9 90 TJ = 25oC 8 80 TJ = - 40oC 25oC 70 I C = 80A I C - Amperes VCE - Volts 7 6 5 40A 4 60 125oC 50 40 30 20 3 10 20A 2 0 6 8 10 12 14 16 VGE - Volts © 2021 Littelfuse, Inc. 18 20 22 24 26 3 4 5 6 7 8 9 10 VGE - Volts 11 12 13 14 15 MMIX4G20N250 Fig. 7. Transconductance Fig. 8. Gate Charge 18 16 TJ = - 40oC 16 14 25oC 12 125oC 10 12 VGE - Volts g f s - Siemens VCE = 1000V I C = 20A I G = 10mA 14 10 8 6 8 6 4 4 2 2 0 0 10 20 30 40 50 60 70 80 90 0 100 0 5 10 15 20 I C - Amperes 25 30 35 40 45 50 55 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 10,000 70 f = 1 MHz Capacitance - PicoFarads 60 I C - Amperes 50 40 30 20 10 0 10.00 100 TJ = 125oC RG = 20Ω dv / dt < 10V / ns Cies 1,000 100 C oes Cres Fig. 13. Maximum Transient Thermal Impedance 10 300 500 700 900 0 1100 1300 1500 1700 1900 2100 2300 2500 5 10 15 20 25 30 35 40 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaa 2.00 1.00 Z(th)JC - K / W D = 0.50 D = 0.20 D = tp / T D = 0.02 0.10 tp D = 0.05 D = 0.10 T D = 0.01 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 T MMIX4G20N250 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature 400 400 RG = 10Ω , VGE = 15V VCE = 1250V 350 I C = 80A 300 300 t r - Nanoseconds t r - Nanoseconds RG = 10Ω , VGE = 15V VCE = 1250V 350 250 200 TJ = 125oC 250 200 TJ = 25oC 150 I C = 40A 150 100 100 50 25 35 45 55 65 75 85 95 105 115 125 20 30 40 50 400 350 300 1000 250 800 200 I C = 80A 600 150 400 100 200 50 0 50 100 150 200 250 300 350 400 450 800 600 120 400 110 0 90 25 35 45 55 180 2000 170 1800 160 140 1000 130 TJ = 125oC 800 120 600 110 400 TJ = 25oC 0 50 I C - Amperes © 2021 Littelfuse, Inc. 60 70 80 t f - Nanoseconds 1200 40 85 95 105 115 125 tf td(off) 1800 TJ = 125oC, VGE = 15V VCE = 1250V 1600 I C = 40A 1400 1400 1200 1200 1000 1000 800 800 600 600 I C = 80A 100 400 400 90 200 200 80 0 t d(off) - Nanoseconds 150 30 75 2000 1600 t d(off) - Nanoseconds t f - Nanoseconds td(off) 1400 20 65 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance RG = 10Ω, VGE = 15V VCE = 1250V 200 100 I C = 80A TJ - Degrees Centigrade tf 1600 130 I C = 40A 200 500 Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 1800 150 140 RG - Ohms 2000 td(off) 1000 0 0 tf RG = 10Ω, VGE = 15V VCE = 1250V t d(off) - Nanoseconds I C = 40A 160 1200 t d(on) - Nanoseconds t r - Nanoseconds td(on) TJ = 125oC, VGE = 15V VCE = 1250V 1200 80 1400 t f - Nanoseconds 1600 tf 70 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 1400 60 I C - Amperes TJ - Degrees Centigrade 0 0 50 100 150 200 250 300 350 400 450 500 RG - Ohms IXYS REF: MMIX4G20N250 (4P) 3-31-21-B MMIX4G20N250 Package Outline Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions, and dimensions.