MUBW15-12A6K

MUBW15-12A6K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 130 A IC25 IFSM = 19 A IC25 = 19 A = 300 A VCE(sat) = 2.9 V VCE(sat) = 2.9 V Part name (Marking on product) MUBW15-12A6K E72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required for the whole drive • Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free wheeling diodes with hiperfast and soft reverse recovery • Industry standard package with insu lated copper base plate and soldering pins for PCB mounting • Temperature sense included AC motor drives with • UL registered • Industry standard E1-pack • Input from single or three phase grid • Three phase synchronous or asynchronous motor • Electric braking operation IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -9 MUBW15-12A6K Ouput Inverter T1 - T6 Ratings Symbol Definitions VCES collector emitter voltage Conditions VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 19 13 A A TC = 25°C 90 W collector emitter saturation voltage IC = 15 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 3.4 V V VGE(th) gate emitter threshold voltage IC = 0.35 mA; VGE = VCE TVJ = 25°C 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C 0.6 mA mA IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V 100 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) TVJ = 25°C to 150°C 3.0 3.5 4.5 1.3 600 pF 45 nC 50 40 290 60 1.2 1.1 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 82 W L = 100 µH; clamped induct. load TVJ = 125°C VCEmax = VCES - LS·di/dt 26 A short circuit safe operating area VCE = 720 V; VGE = ±15 V; RG = 82 W; non-repetitive 10 µs RthJC thermal resistance junction to case (per IGBT) RthCH thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 W TVJ = 125°C TVJ = 125°C 1.35 0.5 K/W K/W Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IRM trr Erec(off) min. typ. max. Unit TVJ = 150°C 1200 V TC = 25°C TC = 80°C 26 17 A A IF = 30 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 3.4 2.3 V V max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -400 A/µs IF = 15 A; VGE = 0 V TVJ = 100°C 16 130 tbd A ns µJ RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) 1.6 0.55 K/W K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -9 MUBW15-12A6K Brake Chopper T7 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 19 13 A A TC = 25°C 90 W collector emitter saturation voltage IC = 15 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 3.4 V V VGE(th) gate emitter threshold voltage IC = 0.4 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) TVJ = 25°C to 150°C 2.9 3.5 4.5 6.5 V 0.5 mA mA 100 nA 0.8 600 pF 45 nC 45 40 290 60 1.2 1.1 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 82 W L = 100 µH; clamped induct. load TVJ = 125°C VCEmax = VCES - LS·di/dt 20 A short circuit safe operating area VCE = 720 V; VGE = ±15 V; RG = 82 W; non-repetitive 10 µs RthJC thermal resistance junction to case (per IGBT) RthCH thermal resistance case to heatsink (per IGBT) 0.45 Ratings typ. max. Unit inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 W TVJ = 125°C TVJ = 125°C 1.35 K/W K/W Brake Chopper D7 Symbol Definitions Conditions VRRM max. repetitive reverse voltage TVJ = 150°C min. 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 15 10 A A VF forward voltage IF = 15 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 3.5 2.0 V V IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C 0.06 0.2 mA mA IRM trr max. reverse recovery current reverse recovery time VR = 600 V; IF = 10 A diF /dt = -400 A/µs TVJ = 100°C 13 110 A ns RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) 2.5 0.85 K/W K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -9 MUBW15-12A6K Input Rectifier Bridge D8 - D13 Symbol Definitions Conditions VRRM max. repetitive reverse voltage IFAV IDAVM IFSM average forward current max. average DC output current max. surge forward current sine 180° rectangular; d = 1/3; bridge t = 10 ms; sine 50 Hz Ptot total power dissipation Symbol Conditions Maximum Ratings 1600 V TC = 80°C TC = 80°C TC = 25°C 31 89 320 A A A TC = 25°C 80 W Characteristic Values min. typ. max. 1.35 V V 0.02 mA mA 1.4 K/W VF forward voltage IF = 30 A TVJ = 25°C TVJ = 125°C 1.0 1.1 IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C 0.4 RthJC thermal resistance junction to case (per diode) TVJ = 25°C RthCH thermal resistance case to heatsink (per diode) 0.45 K/W Temperature Sensor NTC Symbol Definitions Conditions R25 B25/85 resistance min. TC = 25°C 4.45 Ratings typ. max. 4.7 3510 5.0 Unit kW K Module Symbol Definitions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature Conditions VISOL isolation voltage IISOL < 1 mA; 50/60 Hz Md mounting torque (M4) dS dA creep distance on surface strike distance through air min. Ratings typ. max. Unit 125 150 125 °C °C °C 2500 V~ 2.2 Nm -40 -40 2.0 12.7 12.7 Weight mm mm 40 g Equivalent Circuits for Simulation I V0 R0 min. Ratings typ. max. Symbol Definitions Conditions V0 R0 rectifier diode Unit D8 - D13 TVJ = 125°C 0.90 9 V mW V0 R0 IGBT T1 - T6 TVJ = 125°C 1.50 120 V mW V0 R0 free wheeling diode D1 - D6 TVJ = 125°C 1.46 31 V mW V0 R0 IGBT T7 TVJ = 125°C 1.50 120 V mW V0 R0 free wheeling diode D7 TVJ = 125°C 1.46 63 V mW TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -9 MUBW15-12A6K Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Ordering Part Name Standard MUBW 15-12A6K Marking on Product Delivering Mode Base Qty Ordering Code MUBW15-12A6K IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Box 10 499 331 20071113a -9 MUBW15-12A6K 80 200 103 A As TVJ = 125°C A TVJ = 25°C 60 2 TVJ= 45°C 150 2 It IFSM IF 40 TVJ= 45°C 100 TVJ= 150°C TVJ= 150°C 20 50 50Hz, 80% VRRM 0 0.0 0.6 1.8 V 1.2 0 0.001 2.4 0.01 0.1 VF s 1 102 1 t Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Ptot 80 4 5 6 7ms 8 910 t 100 A RthA: 0.2 K/W 0.5 K/W 0.8 K/W 1.5 K/W 3 K/W 5 K/W 8 K/W 120 3 Fig. 3 I2t versus time per diode 160 W 2 ID(AV)80 60 40 40 0 20 0 20 40 60 80 A 0 20 40 60 80 100 120 140 °C ID(AV)M Tamb Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180° 0 0 20 40 60 80 100 120 140 °C TC Fig. 5 Max. forward current vs. case temperature 1.6 K/W 1.2 ZthJC 0.8 0.4 0.0 0.001 MUBW15-12A6K 0.01 0.1 Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved s 1 10 t 20071113a -9 MUBW15-12A6K 30 VGE = 17 V 25 A IC 30 13 V 15 V VGE = 17 V IC 20 13 V 20 TVJ = 125°C TVJ = 25°C 15 15 11 V 11 V 10 10 5 0 5 9V 0 1 2 3 4 0 6 V 7 5 9V 0 1 2 3 4 5 VCE Fig. 8 Typ. output characteristics 30 50 25 A IF 20 A 40 30 15 TVJ = 125°C 20 10 TVJ = 25°C TVJ = 25°C TVJ = 125°C 10 5 0 6 V 7 VCE Fig. 7 Typ. output characteristics IC 15 V 25 A VCE = 20V 4 6 8 10 12 0 14 V 16 0 1 2 3 4 V VF VGE Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of free wheeling diode 200 50 20 trr V 15 40 A 160 ns 30 120 IRM VGE trr 10 80 20 5 VCE = 600V IC = 10A 0 0 10 20 30 40 nC 50 60 QG Fig. 11 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved TVJ = 125°C VR = 600 V IF = 15 A 10 IRM 0 0 40 MUBW1012A7 200 400 600 800 A/Ps 0 1000 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode 20071113a -9 MUBW15-12A6K 4 Eon mJ VCE = 600V VGE = ±15V 3 RG = 82: TVJ = 125°C td(on) 2 4 ns mJ 60 3 t Eoff 40 2 20 1 0 0 tr 1 0 80 Eon 0 5 10 15 20 A 400 td(off) VCE = 600V VGE = ±15V Eoff RG = 82: TVJ = 125°C 5 10 15 IC 2.0 Eon VCE = 600V VGE = ±15V IC = 10A TVJ = 125°C Eon 1.5 td(on) tr 1.2 100 75 t Eoff 600 Eoff mJ 0.0 0 40 60 80 100 120 : 140 0.0 tf 0 20 40 t 200 60 80 RG 100 0 120 : 140 RG Fig. 15 Typ. turn on energy and switching times versus gate resistor Fig.16 Typ. turn off energy and switching times versus gate resistor 30 10 A K/W 25 ICM 400 VCE = 600V VGE = ±15V IC = 10A TVJ = 125°C 0.4 25 ns td(off) 0.8 50 0.5 20 0 20 A Fig. 14 Typ. turn off energy and switching times versus collector current ns 1.0 0 100 IC Fig. 13 Typ. turn on energy and switching times versus collector current mJ t 200 tf 0 ns 300 ZthJC 20 diode 1 IGBT 15 10 0.1 single pulse 5 0 RG = 82 : TVJ = 125°C 0 200 400 600 800 1000 1200 1400 V VCE Fig. 17 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 0.01 0.001 MUBW 15-12A6K 0.01 0.1 1 s 10 t Fig. 18 Typ. transient thermal impedance 20071113a -9 MUBW15-12A6K A 25 IC 30 A 25 VGE = 15V 20 20 TVJ = 25°C 15 15 TVJ = 125°C 10 10 5 0 TVJ = 125°C IF TVJ = 25°C 5 0 1 2 3 4 5 V 0 6 0 1 2 3 Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of free wheeling diode 4 400 mJ ns Eoff 3 td(off) VCE = 600V VGE = ±15V 2 300 t 1.2 Eoff 600 Eoff mJ ns td(off) 0.8 VCE = 600V VGE = ±15V IC = 20A TVJ = 125°C 200 RG = 82: TVJ = 125°C 1 0.4 400 t 200 100 tf 0 4 V VF VCE Eoff 0 5 10 15 20 A tf 0 0.0 0 20 40 60 80 120 : 100 IC 0 RG Fig. 21 Typ. turn off energy and switching times versus collector current Fig. 22 Typ. turn off energy and switching times versus gate resistor 10 K/W ZthJC diode 1 10000 IGBT : R 1000 0.1 single pulse 0.01 0.001 0.01 0.1 1 s 10 t Fig. 23 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 100 MUBW15-12A6K 0 25 50 75 100 125 C 150 T Fig. 24 Typ. thermistor resistance versus temperature 20071113a -9