MUBW15-12A7

MUBW 15-12 A7 Converter - Brake - Inverter Module (CBI2) 21 D11 D13 22 D7 D15 7 1 2 3 D12 D14 D16 T1 D1 16 15 6 T7 14 23 T2 11 10 T3 D3 18 17 D5 20 19 5 T4 D2 T5 D4 12 4 T6 D6 13 24 8 NTC 9 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V IDAVM = 36 A IFSM = 300 A VCES = 1200 V IC25 = 20 A VCE(sat) = 2.3 V VCES = 1200 V IC25 = 35 A VCE(sat) = 2.1 V Application: AC motor drives with Input Rectifier Bridge D11 - D16 ● Conditions Maximum Ratings VRRM 1600 V IFAV IDAVM IFSM TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3 TVJ = 25°C; t = 10 ms; sine 50 Hz 25 24 300 A A A Ptot TC = 25°C 100 W ● ● Features ● ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 15 A; TVJ = 25°C TVJ = 125°C 1.3 1.3 IR VR = VRRM; TVJ = 25°C TVJ = 125°C trr VR = 100 V; IF = 15 A; di/dt = -15 A/µs RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation ● 1.6 V V ● 0.15 1.2 mA mA ● 1 µs High level of integration - only one power semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included 1.3 K/W 418 Symbol 1-8 MUBW 15-12 A7 Output Inverter T1 - T6 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC80 TC = 25°C TC = 80°C 35 25 A A RBSOA VGE = ±15 V; RG = 82 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 35 VCEK ≤ VCES A tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive 10 µs IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.37 V; R0 = 62 mΩ Ptot TC = 25°C 180 W Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.32 V; R0 = 30 mΩ Symbol Conditions IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.6 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES 2.1 2.3 4.5 td(on) tr td(off) tf Eon Eoff Inductive load, TVJ = 125°C VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 82 Ω Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 15 A RthJC (per IGBT) 2.6 V V 6.5 V 0.9 mA mA 200 nA 0.9 VCE = 0 V; VGE = ± 20 V Conditions IF25 IF80 TC = 25°C TC = 80°C Rectifier Diode (typ. at TJ = 125°C) V0 = 1.08 V; R0 = 15 mΩ T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.32 V; R0 = 131 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.39 V; R0 = 56 mΩ Thermal Response 100 70 500 70 2.3 1.8 ns ns ns ns mJ mJ D11 - D16 1000 70 pF nC Rectifier Diode (typ.) Cth1 = 0.106 J/K; Rth1 = 1.06 K/W Cth2 = 0.79 J/K; Rth2 = 0.239 K/W 0.7 K/W T1 - T6 / D1 - D6 IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.545 K/W Cth2 = 1.162 J/K; Rth2 = 0.155 K/W Output Inverter D1 - D6 Symbol D11 - D16 T1 - T6 / D1 - D6 Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) Conduction Maximum Ratings 26 17 A A Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 1.758 K/W Cth2 = 0.639 J/K; Rth2 = 0.342 K/W T7 / D7 Symbol Conditions Characteristic Values min. typ. max. VF IF = 15 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.8 V V IRM trr IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 16 130 A ns RthJC (per diode) 2.7 IGBT (typ.) Cth1 = 0.09 J/K; Rth1 = 0.954 K/W Cth2 = 0.809 J/K; Rth2 = 0.246 K/W Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W 418 2.1 K/W 2-8 © 2004 IXYS All rights reserved MUBW 15-12 A7 Brake Chopper T7 Symbol Conditions VCES TVJ = 25°C to 150°C 1200 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC80 TC = 25°C TC = 80°C 20 15 A A RBSOA VGE = ±15 V; RG = 82 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 20 VCEK ≤ VCES A tSC (SCSOA) VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.4 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff Cies QGon Maximum Ratings 10 µs 105 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.7 4.5 2.7 V V 6.5 V 0.5 mA mA 200 nA 0.3 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω 50 40 290 60 1.2 1.1 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 600 V; VGE = 15 V; IC = 10 A 600 45 pF nC RthJC 1.2 K/W Brake Chopper D7 Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 10 A; TVJ = 25°C TVJ = 125°C 1.9 VR = VRRM; TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V IRM trr RthJC © 2004 IXYS All rights reserved 1200 V 17 11 A A Characteristic Values min. typ. max. 2.9 V V 0.06 0.07 mA mA 13 110 A ns 3.2 K/W 418 IR Maximum Ratings 3-8 MUBW 15-12 A7 Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions TVJ TJM Tstg Operating VISOL Maximum Ratings -40...+125 150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 5 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight 6 6 mΩ mm mm 0.02 K/W 180 g 418 Dimensions in mm (1 mm = 0.0394") 4-8 © 2004 IXYS All rights reserved MUBW 15-12 A7 Input Rectifier Bridge D11 - D16 50 103 100 50Hz, 80% VRRM A 2 As A 40 80 IFSM TVJ= 125°C IF TVJ= 45°C I2t TVJ= 25°C 30 60 TVJ= 45°C 102 20 40 10 20 0 0.0 0.4 0.8 1.2 VF 1.6 V 101 0 0.001 2.0 TVJ= 150°C TVJ= 150°C 0.01 0.1 1 s 1 t Fig. 1 Forward current versus voltage drop per diode 3 4 5 6 78 ms910 t Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 60 500 A W 50 400 Id(AV) RthA: 0.05 K/W 0.15 K/W 0.3 K/W 0.5 K/W 1 K/W 2 K/W 5 K/W Ptot 300 200 40 30 20 100 10 0 0 0 20 40 60 80 A 0 20 40 60 80 100 120 140 °C Id(AV)M Fig. 4 2 Tamb Power dissipation versus direct output current and ambient temperature, sin 180° 0 20 40 60 80 100 120 140 °C TC Fig. 5 Max. forward current versus case temperature 1.6 K/W 1.2 ZthJC 0.8 0.4 DWFN9-16 0.01 0.1 Fig. 6 Transient thermal impedance junction to case © 2004 IXYS All rights reserved s 1 10 t 418 0.0 0.001 5-8 MUBW 15-12 A7 Output Inverter T1 - T6 / D1 - D6 50 IC 50 VGE = 17V 15V 13V A 40 IC 30 VGE = 17V 15V 13V A 40 30 11V 11V 20 20 10 9V 10 9V TVJ = 25°C TVJ = 125°C 0 0 0 1 2 3 4 0 6 V 7 5 1 2 3 4 VCE Fig. 7 Typ. output characteristics 6 V 7 5 VCE Fig. 8 Typ. output characteristics 50 50 A 40 IF IC 40 A 30 30 TVJ = 125°C TVJ = 25°C 20 20 TVJ = 25°C TVJ = 125°C 10 10 VCE = 20V 0 4 6 8 10 12 VGE 0 0 14 V 16 1 2 3 V 4 VF Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of free wheeling diode 200 50 20 trr V 15 40 A 160 ns 30 120 20 80 IRM VGE trr 10 5 VCE = 600V IC = 15A TVJ = 125°C VR = 600V IF = 15A 10 IRM MUBW1512A7 0 0 0 20 40 60 80 nC QG 0 200 400 600 800 A/µs -di/dt 0 1000 Fig. 12 Typ. turn off characteristics of free wheeling diode 418 Fig. 11 Typ. turn on gate charge 100 40 6-8 © 2004 IXYS All rights reserved MUBW 15-12 A7 Output Inverter T1 - T6 / D1 - D6 Eon 6 120 mJ ns td(on) 4 80 6 600 mJ t ns td(off) Eoff 400 t 4 Eoff tr VCE = 600V VGE = ±15V 2 RG = 82Ω TVJ = 125°C Eon VCE = 600V VGE = ±15V 2 40 RG = 82Ω TVJ = 125°C 200 tf 0 0 0 0 10 20 0 0 30 A 10 30 A 20 IC IC Fig. 13 Typ. turn on energy and switching times versus collector current 3 Eon Fig. 14 Typ. turn off energy and switching times versus collector current 2.0 150 800 Eoff mJ mJ td(on) Eon 2 ns 100 t ns td(off) Eoff 1.5 600 t tr VCE = 600V VGE = ±15V IC = 15A TVJ = 125°C 1 1.0 400 VCE = 600V VGE = ±15V IC = 15A TVJ = 125°C 50 0.5 200 tf 0 0 20 40 60 80 100 0 120 Ω 140 0.0 0 20 40 60 80 RG 0 120 Ω 140 RG Fig. 15 Typ. turn on energy and switching times versus gate resistor Fig.16 Typ. turn off energy and switching times versus gate resistor 40 10 diode K/W A ICM 100 30 ZthJC 1 IGBT 0.1 20 0.01 10 single pulse 0.001 RG = 82 Ω TVJ = 125°C 0 0 200 400 600 800 1000 1200 1400 V VCE MUBW1512A7 0.01 0.1 1 s 10 t Fig. 18 Typ. transient thermal impedance 418 Fig. 17 Reverse biased safe operating area RBSOA 0.0001 0.00001 0.0001 0.001 © 2004 IXYS All rights reserved 7-8 MUBW 15-12 A7 Brake Chopper T7 / D7 30 30 A 25 IC 25 A IF 20 20 TVJ = 25°C TVJ = 125°C TVJ = 125°C TVJ = 25°C 15 15 10 10 5 5 VGE = 15V 0 0 0 1 2 3 4 5 V 6 0 1 2 3 Fig. 19 Typ. output characteristics 500 VCE = 600V VGE = ±15V Eoff 2.0 t 200 0.4 0.5 0.0 12 200 tf 0 A 20 16 t 400 100 tf 8 td(off) VCE = 600V VGE = ±15V IC = 10A TVJ = 125°C 300 Eoff ns Eoff 0.8 td(off) 1.0 4 600 Eoff mJ 400 1.5 0 1.2 ns RG = 82Ω TVJ = 125°C 4 Fig. 20 Typ. forward characteristics of free wheeling diode 2.5 mJ V VF VCE 0.0 0 20 40 60 80 100 IC 0 120 Ω 140 RG Fig. 21 Typ. turn off energy and switching times versus collector current Fig. 22 Typ. turn off energy and switching times versus gate resistor 10 Temperature Sensor NTC diode K/W 1 IGBT 10000 ZthJC 0.1 Ω R 0.01 1000 0.001 single pulse 0.0001 0.00001 0.0001 0.001 MUBW1512A7 100 0.01 0.1 1 s 10 t 25 50 75 100 125 °C 150 T Fig. 24 Typ. thermistorresistance versus temperature 418 Fig. 23 Typ. transient thermal impedance 0 8-8 © 2004 IXYS All rights reserved