MUBW45-12T6K

MUBW45-12T6K Converter - Brake - Inverter Module (CBI 1) Trench IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 151 A IC25 = = 43 A 2.9 V VCE(sat) = 2.5 V IFSM = 320 A VCE(sat) = 19 A IC25 Preliminary data Part name (Marking on product) MUBW45-12T6K E72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required for the whole drive • Inverter with Trench IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current • Epitaxial free wheeling diodes with hiperfast and soft reverse recovery • Industry standard package with insu lated copper base plate and soldering pins for PCB mounting • Temperature sense included AC motor drives with • UL registered • Industry standard E1-pack • Input from single or three phase grid • Three phase synchronous or asynchronous motor • Electric braking operation IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130626c 1-6 MUBW45-12T6K Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 45 A; VGE = 15 V min. typ. TVJ = 25°C to 150°C max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 43 31 A A TC = 25°C 160 W 2.5 3.2 3.1 V V 6.5 V 1.0 1.5 1.25 mA mA 400 nA continuous transient TVJ = 25°C TVJ = 125°C VGE(th) gate emitter threshold voltage IC = 1 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 1810 pF QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 25 A 240 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 36 Ω 90 50 520 90 2.5 3.4 ns ns ns ns mJ mJ ICM reverse bias safe operating area RBSOA; VGE = ±15 V; RG = 36 Ω L = 100 μH; clamped induct. load TVJ = 125°C VCEmax = VCES - LS·di/dt 50 A tSC (SCSOA) short circuit safe operating area VCE = 900 V; VGE = ±15 V; RG = 36 Ω; non-repetitive 10 μs RthJC thermal resistance junction to case (per IGBT) RthCH thermal resistance case to heatsink (per IGBT) 5 TVJ = 125°C TVJ = 125°C 0.8 0.3 K/W K/W Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitve reverse voltage TVJ = 150°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 49 32 A A VF forward voltage IF = 45 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 3.1 2.3 V V IRM trr Erec(off) max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1700 A/μs IF = 30 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) TVJ = 100°C 51 180 1.8 A ns μJ 0.9 0.3 K/W K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130626c 2-6 MUBW45-12T6K Brake Chopper T7 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 15 A; VGE = 15 V min. TVJ = 25°C to 150°C V ±20 ±30 V V TC = 25°C TC = 80°C 19 13 A A TC = 25°C 90 W 3.4 V V IC = 0.4 mA; VGE = VCE TVJ = 25°C collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 10 A turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) 2.9 3.5 TVJ = 25°C TVJ = 125°C gate emitter threshold voltage QG(on) Unit 1200 VGE(th) td(on) tr td(off) tf Eon Eoff max. continuous transient ICES total gate charge typ. 4.5 6.5 V 0.5 mA mA 100 nA 0.8 600 pF 45 nC 45 40 290 60 1.2 1.1 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 82 Ω L = 100 μH; clamped induct. load TVJ = 125°C VCEmax = VCES - LS·di/dt 20 A short circuit safe operating area VCE = 720 V; VGE = ±15 V; RG = 82 Ω; non-repetitive 10 μs RthJC thermal resistance junction to case (per IGBT) RthCH thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω TVJ = 125°C TVJ = 125°C 1.35 0.405 K/W K/W Brake Chopper D7 Symbol Definitions VRRM max. repetitive reverse voltage IF25 IF80 forward current VF forward voltage IR reverse current Ratings typ. max. Unit TVJ = 150°C 1200 V TC = 25°C TC = 80°C 15 10 A A 3.5 V V 0.06 Conditions IF = 15 A; VGE = 0 V VR = VRRM IRM trr max. reverse recovery current reverse recovery time VR = 600 V; IF = 10 A diF /dt = -400 A/μs RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) min. TVJ = 25°C TVJ = 125°C 2.0 TVJ = 25°C TVJ = 125°C 0.2 mA mA TVJ = 100°C 13 110 A ns 2.5 0.85 K/W K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130626c 3-6 MUBW45-12T6K Input Rectifier Bridge D8 - D13 Symbol Definitions VRRM max. repetitive reverse voltage IFAV IDAVM IFSM average forward current max. average DC output current max. surge forward current Ptot total power dissipation Symbol Conditions Conditions sine 180° rectangular; d = 1/3; bridge t = 10 ms; sine 50 Hz Maximum Ratings 1600 V TC = 80°C TC = 80°C TC = 25°C 37 104 320 A A A TC = 25°C 110 W Characteristic Values min. VF forward voltage IF = 45 A TVJ = 25°C TVJ = 125°C IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) typ. max. 1.41 1.38 V V 0.02 mA mA 1.1 K/W 0.4 TVJ = 25°C 0.35 K/W Temperature Sensor NTC Symbol Definitions R25 B25/85 resistance Conditions min. TC = 25°C 4.45 Ratings typ. max. 4.7 3510 5.0 Unit kΩ K Module Symbol Definitions Conditions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage IISOL < 1 mA; 50/60 Hz Md mounting torque (M4) dS dA creep distance on surface strike distance through air min. Ratings typ. max. Unit 125 150 125 °C °C °C 2500 V~ -40 -40 2.0 2.2 12.7 12.7 Weight Nm mm mm 40 g Equivalent Circuits for Simulation I V0 R0 min. Ratings typ. max. Symbol Definitions Conditions V0 R0 rectifier diode Unit D8 - D13 TVJ = 125°C 0.90 9 V mΩ V0 R0 IGBT T1 - T6 TVJ = 125°C 0.95 43 V mΩ V0 R0 free wheeling diode D1 - D6 TVJ = 125°C 1.5 14 V mΩ V0 R0 IGBT T7 TVJ = 125°C 1.5 120 V mΩ V0 R0 free wheeling diode D7 TVJ = 125°C 1.46 63 V mΩ TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 20130626c 4-6 MUBW45-12T6K Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Ordering Part Name Standard MUBW 45-12T6K Marking on Product Delivering Mode Base Qty Ordering Code MUBW45-12T6K IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved Box 10 500 131 20130626c 5-6 MUBW45-12T6K 50 40 *$ 20 10 20 0 0 Fig.4 Typ. turn-on gate charge Fig. 5 Typ. switching energy vs. collector current Fig. 6 Typ. switching energy vs. gate resistance 60 1.5 50 FRD 40 1.0 ;UI+$ IF IGBT 30 [A] 20 0.5 0.0 0.001 0.01 Ri Ti Ri Ti 0.18 0.14 0.36 0.16 0.0025 0.0300 0.0300 0.0800 0.3413 0.2171 0.3475 0.2941 0.0025 0.0300 0.0300 0.0800 0.1 U Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved TVJ = 125°C 10 1 0 0.0 TVJ = 25°C 0.5 1.0 1.5 2.0 2.5 3.0 7' Fig. 8 Typ. forward characteristics 20130626c 6-6