MUBW75-12T8

MUBW 75-12 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 D11 D13 22 D15 D7 NTC 8 7 2 1 9 D12 T1 16 D1 D16 D3 17 15 T7 T2 11 14 D2 T5 20 D5 19 5 6 3 D14 T3 18 T4 D4 12 4 T6 D6 13 10 Three Phase Rectifier 24 Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IFAVM = 65 A IC25 IC25 = 55 A IFSM = 1100 A VCE(sat) = 1.7 V = 110 A VCE(sat) = 1.7 V Application: AC motor drives with Input Rectifier Bridge D11 - D16 Symbol Conditions Maximum Ratings VRRM IFAV IDAVM IFSM TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3; bridge TC = 25°C; t = 10 ms; sine 50 Hz Ptot TC = 25°C Symbol Conditions 1600 V 65 180 1100 A A A 155 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.3 V V 0.05 mA mA 0.8 K/W VF IF = 75 A; TVJ = 25°C TVJ = 125°C 1.15 1.05 IR VR = VRRM; TVJ = 25°C TVJ = 125°C 0.8 RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved • Input from single or three phase grid • Three phase synchronous or asynchronous motor • Electric braking operation Features • High level of integration - only one power semiconductor module required for the whole drive • IGBT technology with low saturation voltage, low switching losses and tail current, high RBSOA and short circuit ruggedness • Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery • Industry standard package with insulated copper base plate and soldering pins for PCB mounting • Temperature sense included 0646 23 -7 MUBW 75-12 T8 Output Inverter T1 - T6 Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES Continuous ± 20 V IC25 IC80 ICM TC = 25°C TC = 80°C TC = 80°C; tp = 1 ms 110 75 150 A A A Ptot TC = 25°C 355 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.7 2.0 2.15 V V 5.8 6.5 V 4 mA mA 400 nA VCE(sat) IC = 75 A; VGE = 15 V VGE(th) IC = 3 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V IGES VCE = 0 V; VGE = ± 20 V Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 5.35 nF QGon VCE = 600 V; VGE = 15 V; IC = 75 A 700 nC Inductive load, TVJ = 125°C VCE = 600 V; IC = 75 A VGE = ±15 V; RG = 4.7 Ω 290 50 520 90 7 9.5 ns ns ns ns mJ mJ td(on) tr td(off) tf Eon Eoff TVJ = 25°C TVJ = 125°C 5 TVJ = 25°C TVJ = 125°C RBSOA IC = ICM; VGE = 15 V RG = 4.7 Ω; TVJ = 125°C tSC (SCSOA) VCE = 720 V; VGE = ±15 V; RG = 4.7 Ω tP < 10 µs; non-repetitive; TVJ = 125°C 1 VCEK < VCES - LS di/dt V 300 A RthJC 0.35 K/W Output Inverter D1 - D6 Conditions IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions Maximum Ratings 155 75 Characteristic Values min. VF IF = 75 A; A A TVJ = 25°C TVJ = 125°C IRM Qrr trr Erec IF = 75 A; diF /dt = -1500 A/µs; TVJ = 125°C; VR = 600 V; VGE = 0 V RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved typ. max. 2.1 1.6 2.6 135 15 160 6 V V A µC ns mJ 0.4 K/W 0646 Symbol -7 MUBW 75-12 T8 Brake Chopper T7 Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES Continuous ± 20 V IC25 IC80 ICM TC = 25°C TC = 80°C TC = 80°C; tp = 1 ms 55 35 70 A A A Ptot TC = 25°C 200 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.7 2.0 2.15 V V 5.8 6.5 V 0.25 mA mA 400 nA VCE(sat) IC = 35 A; VGE = 15 V VGE(th) IC = 1.5 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V IGES VCE = 0 V; VGE = ± 20 V Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2.5 nF QGon VCE = 600 V; VGE = 15 V; IC = 35 A 330 nC td(on) tr td(off) tf Eoff Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 27 Ω 90 50 520 90 4.8 ns ns ns ns mJ TVJ = 25°C TVJ = 125°C 5 TVJ = 25°C TVJ = 125°C RBSOA IC = ICM; VGE = 15 V RG = 27 Ω; TVJ = 125°C tSC (SCSOA) VCE = 720 V; VGE = ±15 V; RG = 27 Ω tP < 10 µs; non-repetitive; TVJ = 125°C 0.3 VCEK < VCES - LS di/dt V 140 A RthJC 0.62 K/W Brake Chopper D7 Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions Maximum Ratings 1200 V 50 30 A A typ. max. 3.3 V V 0.25 mA mA 1.2 K/W VF IF = 35 A; TVJ = 25°C TVJ = 125°C 2.5 2.0 IR VR = VRRM; TVJ = 25°C TVJ = 125°C 0.5 RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0646 Characteristic Values min. -7 MUBW 75-12 T8 Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions TVJ TJM Tstg operating VISO Maximum Ratings -40...+125 +150 -40...+125 °C °C °C IISOL < 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 3-6 Nm Symbol Conditions Characteristic Values min. Rtherm-chip Resistance terminal to chip dS Creepage distance on surface RthCH with heatsink compound dA Strike distance in air typ. 5 max. mΩ mm mm 6 6 0.01 K/W 300 g Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0646 Dimensions in mm (1 mm = 0.0394") -7 MUBW 75-12 T8 Input Rectifier Bridge D11 - D16 150 500 120 400 IF 102 4 A As 2 TVJ = 45°C It IFSM 90 300 TVJ= 45°C 103 TVJ = 150°C [A] 60 200 TVJ = 125°C TVJ = 25°C 30 TVJ= 150°C 100 50Hz, 80% VRRM 0 0.0 0.5 1.0 0 0.001 1.5 0.01 0.1 VF [V] s 1 102 1 2 3 t 4 5 6 7 ms 8 910 t Fig. 1 Typ. forward current vs. voltage drop per diode 160 A 450 400 W RthA: 0.05 K/W 0.15 K/W 0.3 K/W 0.5 K/W 1 K/W 2 K/W 5 K/W 350 Ptot300 250 200 150 120 100 80 60 40 100 20 50 0 Id(AV)140 0 20 40 60 80 100 120 140 160 A 180 0 20 40 60 Id(AV)M 80 100 120 140 C Tamb 0 0 20 40 60 80 100 120 140 C TC 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 t [s] IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0646 Fig. 2 Transient thermal impedance junction to case -7 MUBW 75-12 T8 Output Inverter T1 - T6 / D1 - D6 150 150 VGE = 15 V 125 125 100 IC 100 TVJ = 25°C IC TVJ = 125°C 75 [A] 75 [A] 50 25 25 0.5 1.0 1.5 2.0 2.5 3.0 9V TVJ = 125°C 50 0 0.0 11 V VGE = 13 V 15 V 17 V 19 V 0 3.5 0 1 2 VCE [V] 3 4 5 VCE [V] Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic 150 150 VCE = 20 V 125 125 IC 100 IF 100 [A] [A] 75 75 50 50 TVJ = 125°C 0 4 6 8 TVJ = 125°C 25 TVJ = 25°C 10 TVJ = 25°C 0 0.0 12 0.4 0.8 VGE [V] 20 VCE = 600 V VGE = ±15 V 10 E Eoff Erec [mJ] 5 0 diode IGBT ZthJC 12 Eoff [mJ] 8 30 60 90 120 150 0 single pulse Erec 0 10 20 30 40 50 IC [A] RG [:] Fig. 7 Typical switching losses vs. collector current Fig. 8 Typ. switching losses vs. gate resistance IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 0.1 [K/W] 4 0 2.4 1 E on VCE = 600 V VGE = ±15 V IC = 75 A TVJ = 125°C 16 RG = 4.7 : TVJ = 125°C Eon 2.0 Fig. 6 Typical forward characteristic of free wheeling diode 20 E 1.6 VF [V] Fig. 5 Typical transfer characteristic 15 1.2 0.01 0.001 MUBW 75-12T8 0.01 0.1 1 10 t [s] Fig. 9 Transient thermal impedance 0646 25 -7 MUBW 75-12 T8 Brake Chopper T7 / D7 70 100 TVJ = 25°C 60 80 50 TVJ = 125°C 40 IF 60 [A] 30 [A] 40 IC 20 TVJ = 125°C 20 10 0 0.5 VGE = 15 V 1.0 1.5 2.0 2.5 3.0 TVJ = 25°C 0 0.0 3.5 0.5 1.0 1.5 Fig. 10 Typical output characteristics 9 6 Eoff 4 5 [mJ] 4 [mJ] 3 VCE = 600 V VGE = ±15 V IC = 35 A TVJ = 125°C 3 2 2 1 1 0 10 20 30 40 50 60 0 70 0 10 20 30 40 50 60 70 80 90 100 IC [A] RG [:] Fig. 12 Typ. turn off energy vs. collector current Fig. 13 Typ. turn off energy vs. gate resistor 10 Temperature Sensor NTC diode ZthJC 3.5 5 Eoff 0 3.0 6 RG = 27 : TVJ = 125°C 7 2.5 Fig. 11 Typical forward characteristics of free wheeling diode VCE = 600 V VGE = ±15 V 8 2.0 VF [V] VGE [V] 10000 1 IGBT [K/W] R 0.1 1000 [:] single pulse 0.01 0.1 1 10 t [s] Fig. 14 Transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 100 MUBW 5012T8 0 25 50 75 100 125 150 T [°C] Fig. 15 Typ. termistor resistance versus temperature 0646 0.01 0.001 -7