MUBW75-17T8

MUBW 75-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 D11 D13 22 D15 D7 NTC 8 7 2 1 9 D12 T1 16 D1 D16 D3 17 15 T7 T2 11 14 D2 T5 20 D5 19 5 6 3 D14 T3 18 T4 D4 12 4 T6 E72873 D6 13 10 23 Three Phase Rectifier 24 Brake Chopper Three Phase Inverter VRRM = 2200 V VCES = 1700 V VCES = 1700 V IFAVM = 70 A IC25 IC25 = 48 A IFSM = 700 A VCE(sat) = 1.8 V = 113 A VCE(sat) = 2.0 V Application: AC motor drives with Input Rectifier Bridge D11 - D16 Symbol Conditions Maximum Ratings VRRM 2200 V IFAV IDAVM IFSM TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3; bridge TC = 25°C; t = 10 ms; sine 50 Hz 50 155 700 A A A Ptot TC = 25°C 130 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.5 V V 0.05 mA mA 0.95 K/W VF IF = 75 A; TVJ = 25°C TVJ = 125°C 1.4 1.3 IR VR = VRRM; TVJ = 25°C TVJ = 125°C 1.5 RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved • Input from single or three phase grid • Three phase synchronous or asynchronous motor • Electric braking operation Features • High level of integration - only one power semiconductor module required for the whole drive • IGBT technology with low saturation voltage, low switching losses and tail current, high RBSOA and short circuit ruggedness • Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery • Industry standard package with insulated copper base plate and soldering pins for PCB mounting • Temperature sense included 20090826a 1-8 MUBW 75-17 T8 Output Inverter T1 - T6 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1700 V VGES Continuous ± 20 V IC25 IC80 ICM TC = 25°C TC = 80°C TC = 80°C; tp = 1 ms 113 80 150 A A A Ptot TC = 25°C 450 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VCE(sat) IC = 75 A; VGE = 15 V VGE(th) IC = 3 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Conduction I V0 IGBT (typ. at VGE = 15 V; TJ = 125°C) T1-T6 V0 = 1.0 V; R0 = 17 mW typ. max. 2.0 2.4 2.4 V V T7 6.5 V Diode (typ. at TJ = 125°C) 0.8 mA mA D1-D6 400 nA D7 5 2.0 R0 V0 = 1.0 V; R0 = 28 mW V0 = 1.4 V; R0 = 11 mW IGES VCE = 0 V; VGE = ± 20 V Ciss VCE = 25 V; VGE = 0 V; f = 1 MHz 6.6 nF V0 = 1.65 V; R0 = 37 mW QGon VCE = 900 V; VGE = 15 V; IC = 75 A 850 nC D11-D16 V0 = 0.85 V; R0 = 2.8 mW Inductive load, TVJ = 125°C VCE = 900 V; IC = 75 A VGE = ±15 V; RG = 18 Ω 300 60 850 500 30 25 ns ns ns ns mJ mJ td(on) tr td(off) tf Eon Eoff RBSOA IC = ICM; VGE = 15 V RG = 18 Ω; TVJ = 125°C tSC (SCSOA) VCE = 1000 V; VGE = ±15 V; RG = 18 Ω tP < 10 µs; non-repetitive; TVJ = 125°C VCEK < VCES - LS di/dt V 10 µs RthJC 0.28 K/W Output Inverter D1 - D6 Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions Maximum Ratings 92 63 Characteristic Values min. VF IF = 75 A; A A TVJ = 25°C TVJ = 125°C IRM Qrr trr Erec IF = 75 A; diF /dt = -1400 A/µs; TVJ = 125°C; VR = 900 V; VGE = 0 V RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved typ. max. 2.2 2.3 2.9 95 20 800 10 V V A µC ns mJ 0.4 K/W 20090826a 2-8 MUBW 75-17 T8 Brake Chopper T7 Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1700 V VGES Continuous ± 20 V IC25 IC80 ICM TC = 25°C TC = 80°C TC = 80°C; tp = 1 ms 48 34 60 A A A Ptot TC = 25°C 200 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.1 2.2 V V 6.5 V 0.3 mA mA 400 nA VCE(sat) IC = 30 A; VGE = 15 V VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 4.4 nF QGon VCE = 900 V; VGE = 15 V; IC = 30 A 600 nC Inductive load, TVJ = 125°C VCE = 900 V; IC = 30 A VGE = ±15 V; RG = 45 Ω 190 45 970 340 7.5 8.5 ns ns ns ns mJ mJ td(on) tr td(off) tf Eoff Eon TVJ = 25°C TVJ = 125°C RBSOA IC = ICM; VGE = 15 V RG = 27 Ω; TVJ = 125°C tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 45 Ω tP < 10 µs; non-repetitive; TVJ = 125°C 5 0.6 VCEK < VCES - LS di/dt V 10 µs RthJC 0.62 K/W Brake Chopper D7 Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions Maximum Ratings 1700 V 30 21 A A Characteristic Values min. typ. max. 3.3 V V 0.05 VF IF = 30 A; TVJ = 25°C TVJ = 125°C 2.5 2.6 IR VR = VRRM; TVJ = 25°C TVJ = 125°C 0.2 mA mA IRM trr IF = 30 A; diF /dt = -700 A/µs; TVJ = 125°C VR = 900 V 38 670 A ns RthJC (per diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 0.9 K/W 20090826a 3-8 MUBW 75-17 T8 Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions TVJ TJM Tstg operating VISO Maximum Ratings -40...+125 +150 -40...+125 °C °C °C IISOL < 1 mA; 50/60 Hz; 1 min. 3400 V~ Md Mounting torque (M5) 3-6 Nm Symbol Conditions Characteristic Values min. Rtherm-chip Resistance terminal to chip dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound typ. 7 12.7 9.6 max. mΩ mm mm 0.01 K/W 300 g Weight Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20090826a 4-8 MUBW 75-17 T8 Input Rectifier Bridge D11 - D16 700 104 140 50Hz, 80% VRRM 600 120 500 100 IF 80 [A] 60 IFSM 400 [A] 300 TVJ= 45°C 2 TVJ = 125°C 40 0 0.0 0.5 1.0 1.5 2.0 [A s] 200 TVJ = 25°C 20 TVJ = 150°C 100 0 0.01 2.5 0.1 TVJ= 150°C 103 1 VF [V] t [s] Fig. 1 Typ. forward current vs. voltage drop per diode Fig. 2 Surge overload current 350 140 RthA: 5.0 K/W 2.5 K/W 1.5 K/W 1.0 K/W 0.75 K/W 0.5 K/W 200 150 100 [A] 60 50 20 0 20 40 60 80 100 120 140 160 20 0 [A] Id(AV)M 40 60 4 5 6 7 8 910 Id(AV) 80 40 0 3 120 100 0 2 Fig. 3 I2t versus time per diode 160 Ptot 250 1 t [ms] 400 300 [W] 2 It TVJ = 45°C 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tamb [°C] TC [°C] Fig. 4 Power dissipation vs. direct output current & amb. temperature, sin 180° Fig. 5 Max. forward current vs. case temperature 1.0 PV 0.8 0.6 ZthJC [K/W] 0.4 0.2 0.0 Rth1 TJ 1 10 100 1000 Rth2 Cth1 Cth2 Ri ti 1 0.049 0.0085 2 0.012 0.0017 3 0.465 0.045 4 0.105 0.85 5 0.32 0.33 TC 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20090826a 5-8 MUBW 75-17 T8 Output Inverter T1 - T6 / D1 - D6 150 150 13 V VGE = 15 V 17 V 19 V TVJ = 25°C 100 11 V 100 TVJ = 125°C IC TVJ = 125°C IC [A] [A] 50 0 50 0 1 2 3 0 4 9V 0 1 2 3 4 5 VCE [V] VCE [V] Fig. 7 Typical output characteristic Fig. 8 Typical output characteristic 150 150 TVJ = 25°C TVJ = 25°C 100 100 IC IF TVJ = 125°C [A] TVJ = 125°C [A] 50 0 50 5 6 7 8 9 10 11 12 0 0.0 13 0.5 1.0 VGE [V] Fig. 9 Typical transfer characteristic 120 14 TVJ = 125°C VR = 900 V IF = 75 A IRM 100 10 [A] 8 6.8 Ω 1050 18 Ω 90 6 70 4 900 18 Ω trr 47 Ω 6.8 Ω IRM 100 200 300 400 500 600 QG [nC] Fig. 11 Typical turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved trr [ns] 750 600 450 60 2 1350 1200 80 0 3.0 1500 47 Ω 110 12 0 2.5 130 VCE = 900 V IC = 75 A 16 [V] 2.0 Fig. 10 Typical forward characteristic of free wheeling diode 18 VGE 1.5 VF [V] 50 800 1000 1200 1400 1600 1800 300 2000 -di/dt [A/µs] Fig. 12 Typ. turn-off characteristics of free wheeling diode 20090826a 6-8 MUBW 75-17 T8 Output Inverter T1 - T6 / D1 - D6 60 40 VCE = 900 V VGE = ±15 V 50 Eoff RG = 18 Ω TVJ = 125°C 40 VCE = 900 V VGE = ±15 V IC,IF = 75 A TVJ = 125°C Eon 30 E E 30 [mJ] Erec 20 Eon Eoff 20 [mJ] Erec 10 10 0 0 30 60 90 120 150 0 0 10 20 Fig. 13 Typ. turn on energy & switching times versus collector current 40 40 50 Fig. 14 Typ. turn off energy and switching times versus collector current 0.5 VCE = 900 V VGE = ±15 V single pulse diode 0.4 RG = 18 Ω TVJ = 125°C 30 Qrr [µC] 30 RG [Ω] IC, IF [A] IGBT ZthJC 0.3 20 [K/W] 0.2 10 0 0.1 0 30 60 IF [A] 90 120 150 0.0 1 10 100 1000 10000 t [ms] Fig. 16 Transient thermal impedance junction to case Fig. 15 Typical turn-off characteristics of free wheeling diode Temperature Sensor NTC IGBT 10000 R 1000 Diode Ri ti Ri ti 1 0.0175 0.0015 0.0265 0.0020 2 0.0860 0.0276 0.1443 0.0318 3 0.0920 0.1311 0.1655 0.1618 4 0.0832 0.6329 0.0636 0.8218 [Ω] 100 0 25 50 75 100 125 R R R C C C 150 T [°C] Fig. 17 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20090826a 7-8 MUBW 75-17 T8 Brake Chopper T7 / D7 60 60 50 50 TVJ = 25°C TVJ = 25°C IC 40 [A] 30 TVJ = 125°C IF 40 [A] 30 TVJ = 125°C 20 20 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 1 2 VCE [V] 3 VF [V] Fig. 18 Typical output characteristic Fig. 19 Typ. forward characteristics of brake diode 30 30 Eon VCE = 900 V VGE = ±15 V Eoff 20 E E [mJ] [mJ] Erec 10 Eon VCE = 900 V VGE = ±15 V IC /IF = 50 A TVJ = 125°C 25 RG = 8 Ω TVJ = 125°C 20 4 15 Eoff 10 Erec 5 0 0 20 40 60 80 0 100 0 20 Fig. 20 Typ. turn on energy & switching times versus collector current 60 80 Fig. 21 Typ. turn off energy and switching times versus collector current 15 1.0 diode single pulse ICE = 30 A VCE = 900 V VGE 40 RG [Ω] IC, IF [A] 0.8 10 ZthJC [V] IGBT 0.6 [K/W] 0.4 5 0.2 0 0 50 100 150 200 250 300 350 QG [nC] Fig. 22 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 0.0 1 10 100 1000 10000 t [ms] Fig. 23 Typ. NTC resistance versus temperature 20090826a 8-8