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MWI100-12A8

MWI100-12A8

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    E3

  • 描述:

    MOD IGBT SIXPACK RBSOA 1200V E3

  • 数据手册
  • 价格&库存
MWI100-12A8 数据手册
MWI 100-12 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 160 A = 1200 V VCES VCE(sat) typ. = 2.2 V 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 160 110 ICM = 200 VCEK ≤ VCES 10 640 V V A A A µs W Features • NPT IGBT technology • low saturation voltage • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages TC = 25°C • space savings • reduced protection circuits • package designed for wave soldering Typical Applications • AC motor control • AC servo and robot drives • power supplies VCE = VCES; VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C non-repetitive Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.5 4.5 4 400 100 60 600 90 16.1 14.6 6.5 475 2.6 6.5 6.3 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.19 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 6.8 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 100 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-4 451 MWI 100-12 A8 Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 200 130 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 100 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.3 1.7 82 200 2.6 V V A ns 0.3 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.3 V; R0 = 12 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.27 V; R0 = 4.3 mΩ Thermal Response Conditions operating Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 °C °C °C V~ Nm Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.238 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions IGBT (typ.) Cth1 = 0.397 J/K; Rth1 = 0.141 K/W Cth2 = 2.243 J/K; Rth2 = 0.049 K/W Characteristic Values min. typ. max. 1.8 mΩ mm mm 0.01 300 K/W g Creepage distance on surface Strike distance in air with heatsink compound 10 10 Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 2-4 451 MWI 100-12 A8 300 A VGE = 17 V 15 V 13 V 300 A 250 IC 200 VGE = 17 V 15 V 13 V 250 IC 200 TVJ = 25°C 11 V TVJ = 125°C 11 V 150 100 50 0 0 1 2 3 VCE 9V 150 100 50 0 9V 4 V 5 0 1 2 3 4 VCE 5 V6 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics A 200 VCE = 20 V 300 A 250 IF 200 150 TVJ = 125°C TVJ = 125°C IC 150 100 100 50 TVJ = 25°C TVJ = 25°C 50 0 4 5 6 7 8 VGE 0 9 10 V 11 0 1 2 VF 3 V Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 240 A IRM 15 V VGE 10 VCE = 600 V IC = 100 A 80 ns trr TVJ = 125°C VR = 600 V IF = 100 A 180 60 t rr 40 120 5 60 IRM 20 0 0 100 200 300 400 nC 500 QG 0 0 200 400 600 -di/dt MWI00-12A8 800 s A/µ 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 451 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 3-4 MWI 100-12 A8 25 mJ td(on) 20 Eon VCE = 600 V VGE = ±15 V RG = 6.8 Ω TVJ = 125°C 10 ns 8 t 6 4 2 Eoff 25 mJ 10 VCE = 600 V VGE = ±15 V RG = 6.8 Ω TVJ = 125°C n 75 20 15 15 10 5 Eon 50 10 5 0 0 50 100 150 IC A 25 0 0 40 80 IC 0 120 A 160 0 200 Fig. 7 Typ. turn on energy and switching times versus collector current 40 mJ Eon 30 8 td(on) Fig. 8 Typ. turn off energy and switching times versus collector current 12 ns 10 t Eoff 30 mJ VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C n 20 20 VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C Eon 6 4 2 0 10 10 0 0 10 20 30 RG 40 Ω 50 0 0 10 20 30 RG 40 Ω 50 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 250 A Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 ZthJC diode IGBT 200 ICM 150 100 50 0 0 200 RG = 6:8 Ω TVJ = 125°C 0.01 0.001 single pulse 400 600 800 1000 1200 1400 V VCE 0.0001 0.0001 MWI100-12A8 0.001 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. Fig. 12 Typ. transient thermal impedance 451 © 2004 IXYS All rights reserved 4-4
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