MWI 100-12 A8
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
13, 21
IC25 = 160 A = 1200 V VCES VCE(sat) typ. = 2.2 V
1 2
5 6
9 10 19 17 15
3 4 14, 20
7 8
11 12
IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 160 110 ICM = 200 VCEK ≤ VCES 10 640 V V A A A µs W
Features • NPT IGBT technology • low saturation voltage • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages TC = 25°C • space savings • reduced protection circuits • package designed for wave soldering Typical Applications • AC motor control • AC servo and robot drives • power supplies
VCE = VCES; VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C non-repetitive
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.5 4.5 4 400 100 60 600 90 16.1 14.6 6.5 475 2.6 6.5 6.3 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.19 K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 6.8 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 100 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-4
451
MWI 100-12 A8
Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 200 130 A A
Equivalent Circuits for Simulation
Conduction
Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight
Conditions IF = 100 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 2.3 1.7 82 200 2.6 V V A ns 0.3 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.3 V; R0 = 12 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.27 V; R0 = 4.3 mΩ Thermal Response
Conditions operating
Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 °C °C °C V~ Nm
Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.238 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W
IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions
IGBT (typ.) Cth1 = 0.397 J/K; Rth1 = 0.141 K/W Cth2 = 2.243 J/K; Rth2 = 0.049 K/W
Characteristic Values min. typ. max. 1.8 mΩ mm mm 0.01 300 K/W g
Creepage distance on surface Strike distance in air with heatsink compound
10 10
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
2-4
451
MWI 100-12 A8
300
A
VGE = 17 V
15 V 13 V
300 A 250 IC 200
VGE = 17 V
15 V 13 V
250
IC
200
TVJ = 25°C 11 V
TVJ = 125°C
11 V
150 100 50 0 0 1 2 3
VCE
9V
150 100 50 0
9V
4
V
5
0
1
2
3
4
VCE
5
V6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
A
200
VCE = 20 V
300 A 250 IF 200 150
TVJ = 125°C TVJ = 125°C
IC
150
100
100 50
TVJ = 25°C TVJ = 25°C
50
0 4 5 6 7 8
VGE
0
9
10 V 11
0
1
2
VF
3
V
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
240
A IRM
15
V VGE 10
VCE = 600 V IC = 100 A
80
ns
trr TVJ = 125°C VR = 600 V IF = 100 A
180
60 t rr 40
120
5 60
IRM
20
0 0 100 200 300 400 nC 500
QG
0 0 200 400 600
-di/dt
MWI00-12A8
800 s A/µ
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
451
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
3-4
MWI 100-12 A8
25
mJ
td(on)
20
Eon
VCE = 600 V VGE = ±15 V RG = 6.8 Ω TVJ = 125°C
10 ns 8 t 6 4 2 Eoff
25
mJ
10
VCE = 600 V VGE = ±15 V RG = 6.8 Ω TVJ = 125°C
n 75
20 15
15 10 5
Eon
50
10 5 0
0 50 100 150 IC A 25
0 0 40 80
IC
0
120
A
160
0 200
Fig. 7 Typ. turn on energy and switching times versus collector current
40
mJ Eon 30 8
td(on)
Fig. 8 Typ. turn off energy and switching times versus collector current
12 ns 10 t Eoff
30
mJ
VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C
n
20
20
VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C
Eon
6 4 2 0
10
10
0 0 10 20 30
RG
40
Ω 50
0 0 10 20 30
RG
40
Ω 50
0
Fig. 9 Typ. turn on energy and switching times versus gate resistor
250
A
Fig.10 Typ. turn off energy and switching times versus gate resistor
1 K/W 0.1 ZthJC
diode IGBT
200
ICM
150 100 50 0 0 200
RG = 6:8 Ω TVJ = 125°C
0.01
0.001
single pulse
400
600
800 1000 1200 1400 V
VCE
0.0001 0.0001
MWI100-12A8
0.001
0.01
0.1 t
1
s 10
Fig. 11 Reverse biased safe operating area RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 12 Typ. transient thermal impedance
451
© 2004 IXYS All rights reserved
4-4
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