MWI100-12T8T

MWI100-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 145 A VCE(sat) = 1.7 V Part name -ARKINGONPRODUCT -7) 44  30, 31, 32 19 20 10 6 2 27  29 .4# 9 5 1 24 25 26 21 22 23 3 7 11 4  12 E72873 Pin configuration see outlines. 13, 14, 15 33, 34, 35 Features: Application: Package: s4RENCH)'"4TECHNOLOGY sLOWSATURATIONVOLTAGE sLOWSWITCHINGLOSSES sSQUARE2"3/!NOLATCHUP sHIGHSHORTCIRCUITCAPABILITY sPOSITIVETEMPERATURECOEFlCIENT FOREASYPARALLELLING s-/3INPUTVOLTAGECONTROLLED sULTRAFASTFREEWHEELINGDIODES sSOLDERABLEPINSFOR0#"MOUNTING sPACKAGEWITHCOPPERBASEPLATE s!#MOTORDRIVES s3OLARINVERTER s-EDICALEQUIPMENT s5NINTERRUPTIBLEPOWERSUPPLY s!IR CONDITIONINGSYSTEMS s7ELDINGEQUIPMENT s3WITCHED MODEAND RESONANT MODEPOWERSUPPLIES s% 0ACKSTANDARDOUTLINE s)NSULATEDCOPPERBASEPLATE s3OLDERINGPINSFOR0#"MOUNTING s4EMPERATURESENSEINCLUDED IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 20150123d 1-7 MWI100-12T8T Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. TVJ  # VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage I# = 100 A; V'% = 15 V TVJ  # TVJ # VGE(th) gate emitter threshold voltage I# = 4 mA; V'% = V#% TVJ  # ICES collector emitter leakage current V#% = V#%3; V'% = 0 V TVJ  # TVJ # max. 1200 V ±20 ±30 V V 145 100 A A continuous transient T#   # T#   # T#   # IGES gate emitter leakage current V'% = ±20 V Cies input capacitance V#% = 25 V; V'%6F-(Z QG(on) total gate charge V#% = 600 V; V'% = 15 V; I# = 100 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load V#% = 600 V; I# = 100 A V'%›62G = 3.9 Ω TVJ # RBSOA reverse bias safe operating area V'%›62G = 3.9 Ω; TVJ # V#%+ = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current V#% = 900 V; V'% = ±15 V; 2G = 3.9 ΩNON REPETITIVE RthJC thermal resistance junction to case PER)'"4 5.0 Unit  7 1.7 2.0 2.1 V V  6.5 V 4 mA mA 500 nA 1 7210 P& 550 N# 270 50 400 340  13.5 ns ns ns ns mJ mJ 200 A 10 μs A 0.26 +7 TVJ # 400 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitve reverse voltage TVJ  # 1200 V IF25 IF80 forward current T#   # T#   # 135 90 A A VF forward voltage IF = 100 A; V'% = 0 V 2.2 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy V2 = 600 V diF /dt = -1600 A/μs IF = 100 A; V'% = 0 V RthJC thermal resistance junction to case PERDIODE TVJ  # TVJ # 1.95 1.95 TVJ # 12.5 100 350 4 —# A ns mJ 0.4 +7 T# #UNLESSOTHERWISESTATED IXYS reserves the right to change limits, test conditions and dimensions. © 2015 IXYS All rights reserved 20150123d 2-7 MWI100-12T8T Temperature Sensor NTC Symbol R25 B25/50 Definitions Conditions T#   # resistance min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit KΩ K min. -40 Ratings typ. max. 125 150 125 Unit  #  #  # 2500 V~ Module Symbol TVJ TVJM Tstg Definitions Conditions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage -40 I)3/,