MWI15-12A6K

MWI15-12A6K

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    E1

  • 描述:

    MOD IGBT RBSOA SIXPACK E1

  • 详情介绍
  • 数据手册
  • 价格&库存
MWI15-12A6K 数据手册
MWI 15-12A6K IC25 = 19 A = 1200 V VCES VCE(sat) typ. = 3.0 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI15-12A6K 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines. 7 6 4 2 5 3 1 9, 24 Features: Application: Package: • NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate • AC drives • UPS • Welding • UL registered • Industry standard E1-pack IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a 1-4 MWI 15-12A6K IGBTs Ratings Symbol Definitions Conditions min. typ. max. Unit 1200 V ±20 ±30 V V VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current TC = 25°C TC = 80°C 19 13 A A Ptot total power dissipation TC = 25°C 90 W VCE(sat) collector emitter saturation voltage IC = 15 A; VGE = 15 V 3.4 V V TVJ = 25°C to 150°C continuous transient 3.0 3.5 TVJ = 25°C TVJ = 125°C VGE(th) gate emitter threshold voltage IC = 0.35 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) 4.5 6.5 V 0.9 mA mA 100 nA 0.8 600 pF 45 nC 50 40 290 60 1.2 1.1 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 82 7 L = 100 μH; clamped induct. load TVJ = 125°C VCEmax = VCES - LS·di/dt 30 A short circuit safe operating area VCE = 1200 V; VGE = ±15 V; RG = 82 7;non-repetitive 10 μs RthJC thermal resistance junction to case (per IGBT) RthCH thermal resistance case to heatsink (per IGBT) Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 15 A; VGE = 0 V IRM trr Erec(off) max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -400 A/μs IF = 15 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 7 TVJ = 125°C TVJ = 125°C 1.37 0.5 K/W K/W Diodes Ratings min. typ. max. Unit TVJ = 150°C 1200 V TC = 25°C TC = 80°C 24 16 A A 2.7 V V TVJ = 25°C TVJ = 125°C 2.4 1.7 TVJ = 125°C 16 130 tbd A ns μJ 1.6 0.55 K/W K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a 2-4 MWI 15-12A6K Temperature Sensor NTC Symbol Definitions R25 B25/85 resistance Conditions min. TC = 25°C 4.45 Ratings typ. max. 4.7 3510 5.0 Unit k7 K Module Symbol Definitions Conditions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage IISOL < 1 mA; 50/60 Hz Md mounting torque (M4) dS dA creep distance on surface strike distance through air min. Ratings typ. max. Unit 125 150 125 °C °C °C 2500 V~ -40 -40 2.0 2.2 12.7 12.7 Weight Nm mm mm 40 g Equivalent Circuits for Simulation I R0 V0 Ratings Symbol Definitions Conditions V0 R0 IGBT TVJ = 125°C tbd tbd V m7 V0 R0 free wheeling diode TVJ = 125°C 1.38 40 V m7 IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved min. typ. max. Unit 20071113a 3-4 MWI 15-12A6K Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Ordering Part Name Standard MWI 15-12A6K Marking on Product Delivering Mode Base Qty Ordering Code MWI15-12A6K IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Box 10 500308 20071113a 4-4
MWI15-12A6K
物料型号:MWI 15-12A6K

器件简介: - 应用领域:交流驱动、不间断电源(UPS)、焊接 - 特点:NPT IGBTs(低饱和电压、正温度系数、易于并联、快速开关、优化的共振电路尾流电流)、HiPerFREDTM二极管(快速反向恢复、低正向工作电压、低漏电流) - 封装:符合工业标准的E1封装,可焊接引脚,隔离的铜基板

引脚分配:文档中提到引脚配置见外形图,但未提供具体引脚分配信息。

参数特性: - VCES:集电极-发射极电压,1200V - VGES、VGEM:最大直流门极电压、最大瞬态集电极门极电压,±20V至±30V - IC25、IC80:集电极电流在25°C和80°C时分别为19A和13A - Ptot:总功耗在25°C时为90W - VCE(sat):集电极-发射极饱和电压,典型值为3.0V,在25°C和125°C时分别为3.0V和3.5V - VGE(th):门极-发射极阈值电压,4.5V至6.5V - ICES:集电极-发射极漏电流,0.8mA至0.9mA - IGES:门极-发射极漏电流,100nA - Cies:输入电容,600pF - QG(on):总门极电荷,45nC - td(on)、tr、td(off)、tf:分别为开通延迟时间、电流上升时间、关断延迟时间、电流下降时间 - Eon、Eoff:分别为每次开通能量、每次关断能量

功能详解: - IGBT模块的短路安全工作区(RBSOA)和短路安全工作区(SCSOA)参数 - 二极管的最大重复反向电压(VRRM)、正向电流(IF25、IF80)、正向电压(VF)、最大反向恢复电流(IRM)、反向恢复时间(trr)、反向恢复能量(Erec(off)) - NTC温度传感器的电阻(R25、B25/85)

应用信息: - 适用于交流驱动、UPS、焊接等应用

封装信息: - 封装类型:E1封装 - 封装注册:UL注册 - 封装尺寸:文档中提到尺寸见外形图,但未提供具体尺寸信息

其他信息: - 温度传感器NTC的电阻值 - 模块的运行温度、存储温度 - 隔离电压VISOL - 安装扭矩Md - 爬电距离dS和空气间隙dA - 重量
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