MWI15-12A7

MWI 15-12A7 IC25 = 30 A VCES = 1200 V VCE(sat) typ. = 2.0 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI15-12A7 13 1 5 9 2 6 10 16 15 14 E72873 Pin configuration see outlines. 3 7 11 4 8 12 17 Features: Application: Package: • NPT IGBT technology • low saturation voltage • positive temperature coefficient for easy paralleling • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • space savings • reduced protection circuits • AC motor control • AC servo and robot drives power supplies • UL registered • Industry standard E2-pack • package with copper base plate • package designed for wave soldering IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20161111a 1-6 MWI 15-12A7 IGBTs Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 15 A; VGE = 15 V TVJ = 25°C TVJ = 125°C VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 15 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) RthJC typ. TVJ = 25°C to 150°C max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 30 20 A A TC = 25°C 140 W 2.6 V V 6.5 V 0.9 mA mA 200 nA continuous transient 2.0 2.3 4.5 0.8 1000 pF 70 nC 100 75 500 70 2.3 1.8 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 82 W L = 100 µH; clamped induct. load TVJ = 125°C VCEmax = VCES - LS·di/dt 35 A short circuit safe operating area VCE = VCES; VGE = ±15 V; RG = 82 W; non-repetitive 10 µs thermal resistance junction to case (per IGBT) inductive load VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 82 W TVJ = 125°C TVJ = 125°C 0.88 K/W Diodes Ratings Symbol Definitions max. Unit VRRM max. repetitve reverse voltage Conditions TVJ = 150°C min. typ. 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 25 17 A A VF forward voltage IF = 15 A; VGE = 0 V 2.7 V V IRM trr Erec(off) max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -400 A/µs IF = 15 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) TVJ = 25°C TVJ = 125°C 2.4 1.7 TVJ = 125°C 16 130 0.49 A ns mJ 2.1 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20161111a 2-6 MWI 15-12A7 Module Symbol Definitions Conditions min. TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage IISOL < 1 mA; 50/60 Hz Md mounting torque (M4) dS dA creep distance on surface strike distance through air Unit 125 150 125 °C °C °C 2500 V~ -40 -40 2.7 3.3 Nm 6 6 mm mm Weight RthCH Ratings typ. max. thermal resistance case to heatsink with heatsink compound 180 g 0.02 K/W Equivalent Circuits for Simulation I R0 V0 Symbol Ratings Definitions V0 R0 IGBT V0 R0 Diode R1 R2 C1 Conditions R3 C2 C3 max. Unit 1.37 62 V mW D1 - D6 TVJ = 125°C 1.327 30 V mW Zth( t) = C4 typ. TVJ = 125°C n R4 min. T1 - T6 ∑ i =1 t   τi   R i 1 − exp −  τi = Ri⋅ Ci IGBT Diode R1 R2 - - C1 C2 - - IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20161111a 3-6 MWI 15-12A7 Outline Drawing 0.8 ±0.2 Dimensions in mm (1 mm = 0.0394“) 15° ±1° 0.8 ±0.05 1.2 ±0.05 Ø 2.5 Ø 5.5 +0.1 - 0.3 6 Ø 2.1 1.5 ±0.3 Ø6 Ø 0.4 A B Product Marking Ordering Part Name Standard MWI 15-12A7 Marking on Product Delivering Mode Base Qty Ordering Code MWI15-12A7 IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved Box 10 485063 20161111a 4-6 MWI 15-12A7 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20161111a 5-6 MWI 15-12A7 Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Fig. 9 Fig.10 Typ. turn off energy and switching times versus gate resistor Typ. turn on energy and switching times versus gate resistor Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved Typ. turn off energy and switching times versus collector current Fig. 12 Typ. transient thermal impedance 20161111a 6-6