MWI25-12A7

MWI 25-12A7(T) IC25 = 50 A VCES = 1200 V VCE(sat) typ. = 2.2 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Part name (Marking on product) MWI25-12A7 MWI25-12A7T 13 T version 1 5 9 T 2 6 10 16 15 14 E72873 T 3 7 11 4 8 12 17 Features: Application: Package: • NPT IGBT technology • low saturation voltage • positive temperature coefficient for easy paralleling • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • space savings • reduced protection circuits • AC motor control • AC servo and robot drives power supplies • UL registered • Industry standard E2-pack • package with copper base plate • package designed for wave soldering IXYS reserves the right to change limits, test conditions and dimensions. © 2017 IXYS All rights reserved 20170822b 1-6 MWI 25-12A7(T) IGBTs Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 25 A; VGE = 15 V TVJ = 25°C TVJ = 125°C VGE(th) gate emitter threshold voltage IC = 1 mA; VGE = VCE TVJ = 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C typ. TVJ = 25°C to 150°C max. 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 50 35 A A TC = 25°C 225 W 2.7 V V 6.5 V 2 mA mA 200 nA continuous transient IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) RthJC Unit 2.2 2.6 4.5 2 1650 pF VCE = 600 V; VGE = 15 V; IC = 35 A 120 nC inductive load VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 47 Ω 100 70 500 70 3.8 2.8 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 47 Ω L = 100 µH; clamped induct. load TVJ = 125°C VCEmax = VCES - LS·di/dt 70 A short circuit safe operating area VCE = VCES; VGE = ±15 V; RG = 47 Ω; non-repetitive 10 µs thermal resistance junction to case (per IGBT) TVJ = 125°C TVJ = 125°C 0.55 K/W Diodes Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 25 A; VGE = 0 V IRM trr Erec(off) max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -400 A/µs IF = 25 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ = 150°C 1200 V TC = 25°C TC = 80°C 50 33 A A 2.7 V V TVJ = 25°C TVJ = 125°C 2.3 1.7 TVJ = 125°C 20 200 1.3 A ns mJ 1.19 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2017 IXYS All rights reserved 20170822b 2-6 MWI 25-12A7(T) Module Symbol Definitions Conditions min. TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage IISOL < 1 mA; 50/60 Hz Md mounting torque (M4) dS dA creep distance on surface strike distance through air Unit 125 150 125 °C °C °C 2500 V~ -40 -40 2.7 3.3 Nm 6 6 mm mm Weight thermal resistance case to heatsink RthCH Ratings typ. max. with heatsink compound 180 g 0.02 K/W Ratings typ. max. 5.0 5.25 3375 Unit kΩ K Temperature Sensor NTC Symbol R25 B25/50 Definitions Conditions resistance TC = 25°C min. 4.75 Equivalent Circuits for Simulation I R0 Ratings V0 Symbol Definitions V0 R0 IGBT V0 R0 Diode Conditions R2 C1 R3 C2 R4 C3 max. Unit TVJ = 125°C 1.5 40.7 V mΩ D1 - D6 TVJ = 125°C 1.3 16 V mΩ Zth( t) = C4 typ. T1 - T6 n R1 min. 䌥 Ri 1Ѹ exp Ѹ Äi  t i =1 Äi = RiԫCi IGBT Diode R1 R2 - - C1 C2 - - IXYS reserves the right to change limits, test conditions and dimensions. © 2017 IXYS All rights reserved 20170822b 3-6 MWI 25-12A7(T) Outline Drawing 0.8 ±0.2 Dimensions in mm (1 mm = 0.0394“) 15° ±1° 0.8 ±0.05 1.2 ±0.05 Ø 2.5 Ø 5.5 +0.1 - 0.3 6 Ø 2.1 1.5 ±0.3 Ø6 Ø 0.4 A B Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MWI 15-12A7 MWI15-12A7 Box 10 482730 Standard MWI 15-12A7T MWI15-12A7T Box 10 480819 IXYS reserves the right to change limits, test conditions and dimensions. © 2017 IXYS All rights reserved 20170822b 4-6 MWI 25-12A7(T) Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2017 IXYS All rights reserved 20170822b 5-6 MWI 25-12A7(T) Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2017 IXYS All rights reserved 20170822b 6-6