MWI35-12A7

MWI 35-12 A7 MWI 35-12 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 62 A = 1200 V VCES VCE(sat) typ. = 2.2 V Preliminary Data Type: MWI 35-12 A7 MWI 35-12 A7T NTC - Option: without NTC with NTC 1 2 5 6 9 10 16 15 14 T NTC 3 4 17 7 8 11 12 T IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 39 W; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 39 W; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 62 44 ICM = 70 VCEK £ VCES 10 280 V V A A A µs W Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate q q q q q q q q q q q Advantages q q q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.6 4.5 2 200 100 80 500 70 5.4 4.2 2000 140 2.8 6.5 2 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.44 K/W space savings reduced protection circuits package designed for wave soldering Typical Applications q q VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 35 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1.2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V q AC motor control AC servo and robot drives power supplies Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 39 W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-4 023 MWI 35-12 A7 MWI 35-12 A7T Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 50 33 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Conditions IF = 35 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 35 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.8 1.9 20 200 V V A ns 1.19 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.6 V; R0 = 28 mW Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 24.9 mW Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL £ 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 2.7 - 3.3 °C °C V~ Nm Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kW K IGBT (typ.) Cth1 = 0.166 J/K; Rth1 = 0.342 K/W Cth2 = 1.921 J/K; Rth2 = 0.098 K/W Free Wheeling Diode (typ.) Cth1 = 0.081 J/K; Rth1 = 0.973 K/W Cth2 = 0.915 J/K; Rth2 = 0.217 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. 5 mW mm mm K/W g Higher magnification see outlines.pdf © 2000 IXYS All rights reserved 2-4 MWI 35-12 A7 MWI 35-12 A7T 80 A 70 IC 80 A 70 IC 60 13V TJ = 125°C TJ = 25°C VGE=17V 15V 13V 11V VGE=17V 15V 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 50 40 30 11V 9V 9V 20 10 3.0 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 80 A 70 IC VCE = 20V TJ = 25°C 80 A 70 IF 60 50 40 30 20 10 0 TJ = 25°C TJ = 125°C 60 50 40 30 20 10 0 5 6 7 8 9 10 VGE 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 60 A IRM trr 20 V VCE = 600V IC = 35A 300 ns trr VGE 15 40 10 20 5 TJ = 125°C VR = 600V IF = 35A 200 IRM 100 0 0 20 40 60 80 100 120 140 160 nC QG 0 0 200 400 MWI35-12A7 600 800 s A/m -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode © 2000 IXYS All rights reserved 3-4 MWI 35-12 A7 MWI 35-12 A7T 16 mJ Eon 160 ns 120 t Eoff 12 mJ 10 8 6 4 2 0 0 20 40 IC 60 12 td(off) Eoff 600 ns 500 400 t 300 200 100 8 td(on) tr 80 RG = 39W 40 TJ = 125°C VCE = 600V VGE = ±15V 4 Eon RG = 39W TJ = 125°C VCE = 600V VGE = ±15V tf A 0 0 20 40 IC 60 A 0 80 0 80 Fig. 7 Typ. turn on energy and switching times versus collector current 20 mJ Eon 15 240 td(on) tr Eon ns 180 t Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 10 mJ 1500 ns 1200 Eoff t 900 600 300 tf 0 VCE = 600V VGE = ±15V IC = 35A TJ = 125°C 8 6 VCE = 600V VGE = ±15V IC = 35A TJ = 125°C td(off) 10 120 4 5 60 2 0 0 20 40 60 0 0 20 40 60 80 100 120 140 160 RG W 0 80 100 120 140 160 RG W Fig. 9 Typ. turn on energy and switching times versus gate resistor 80 A 70 ICM 10 K/W 1 RG = 39W TJ = 125°C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 60 50 40 30 20 10 ZthJC 0.1 0.01 0.001 diode IGBT single pulse 0 0 200 400 600 800 1000 1200 V VCE 0.0001 0.00001 0.0001 MWI35-12A7 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance © 2000 IXYS All rights reserved 4-4