MWI35-12A7

MWI 35-12 A7 IC25 = 62 A VCES = 1200 V VCE(sat) typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 5 6 9 10 16 15 14 3 4 E72873 11 12 7 8 See outline drawing for pin arrangement 17 Features IGBTs ● Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings ● ● 1200 V ± 20 V 62 44 A A ICM = 70 VCEK ≤ VCES A 10 μs 280 W VGES ● ● ● IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 39 Ω; TVJ = 125°C Clamped inductive load; L = 100 μH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C ● ● ● ● ● NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate Advantages ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. ● Typical Applications ● VCE(sat) IC = 35 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1.2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 39 Ω Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A RthJC (per IGBT) 2.2 2.6 4.5 IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 2.8 V V 6.5 V 2 mA mA 200 nA 2 100 80 500 70 5.4 4.2 ns ns ns ns mJ mJ 2000 140 pF nC space savings reduced protection circuits package designed for wave soldering ● ● AC motor control AC servo and robot drives power supplies 0.44 K/W 20070912a 1-4 MWI 35-12 A7 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 35 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.9 V V IRM trr IF = 35 A; diF/dt = -400 A/μs; TVJ = 125°C VR = 600 V; VGE = 0 V 20 200 A ns RthJC (per diode) 50 33 Conduction A A Characteristic Values min. typ. max. 2.8 1.19 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.6 V; R0 = 28 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 24.9 mΩ Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions 5 Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight Free Wheeling Diode (typ.) Cth1 = 0.081 J/K; Rth1 = 0.973 K/W Cth2 = 0.915 J/K; Rth2 = 0.217 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. Rpin-chip dS dA IGBT (typ.) Cth1 = 0.166 J/K; Rth1 = 0.342 K/W Cth2 = 1.921 J/K; Rth2 = 0.098 K/W 6 6 mΩ mm mm 0.02 K/W 180 g Higher magnification on page B3 - 72 20070912a © 2007 IXYS All rights reserved 2-4 MWI 35-12 A7 80 A 70 IC 80 VGE=17V TJ = 25°C 15V 60 13V 50 11V IC VGE=17V TJ = 125°C A 70 15V 60 13V 50 40 40 30 30 20 20 9V 10 11V 9V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 3.5 V Fig. 2 Typ. output characteristics 80 80 VCE = 20V A 70 IC 2.5 3.0 VCE TJ = 125°C A70 TJ = 25°C 60 IF 60 50 50 40 40 30 30 20 20 10 10 TJ = 25°C 0 0 5 6 7 8 9 10 0 11 V 1 2 Fig. 3 Typ. transfer characteristics 4 V Fig. 4 Typ. forward characteristics of free wheeling diode 300 60 20 V VCE = 600V IC 3 VF VGE = 35A A VGE 15 ns IRM trr trr 200 40 10 20 5 0 TJ = 125°C VR = 600V IF = 35A IRM MWI35-12A7 0 0 20 40 60 80 100 120 140 160 nC QG Fig. 5 Typ. turn on gate charge 100 0 200 400 600 800 A/μs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 20070912a © 2007 IXYS All rights reserved 3-4 MWI 35-12 A7 Eon 16 160 mJ ns 12 120 12 mJ 10 t 8 tr 4 Eon 6 VCE = 600V VGE = ±15V 4 RG = 39Ω 40 TJ = 125°C 2 0 20 40 60 VCE = 600V VGE = ±15V IC = 35A TJ = 125°C Eon 15 100 20 40 60 0 80 A IC td(on) tr Fig. 8 Typ. turn off energy and switching times versus collector current 240 10 ns mJ 180 t Eoff 1500 td(off) VCE = 600V VGE = ±15V IC = 35A TJ = 125°C 8 ns 1200 t Eoff 6 Eon 10 900 120 5 60 0 0 0 20 40 60 80 100 120 140 160 Ω RG 4 600 2 300 0 20 40 60 10 A 70 K/W 1 ZthJC 50 RG = 39Ω TJ = 125°C VCEK < VCES 40 30 20 0 80 100 120 140 160 Ω RG Fig.10 Typ. turn off energy and switching times versus gate resistor 80 60 tf 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 200 tf 0 Fig. 7 Typ. turn on energy and switching times versus collector current mJ 300 RG = 39Ω TJ = 125°C IC 20 400 t VCE = 600V VGE = ±15V 0 0 80 A td(off) Eoff 8 80 td(on) 0 Eoff 600 ns 500 diode 0.1 IGBT 0.01 0.001 10 single pulse 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA 0.0001 0.00001 0.0001 0.001 MWI35-12A7 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 20070912a © 2007 IXYS All rights reserved 4-4