MWI35-12A7T

MWI 35-12 A7 MWI 35-12 A7T IC25 = 62 A = 1200 V VCES VCE(sat) typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type: NTC - Option: MWI 35-12 A7 MWI 35-12 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4 7 8 11 12 T 17 IGBTs Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 39 W; TVJ = 125°C Clamped inductive load; L = 100 µH 1200 V ± 20 V 62 44 A A ● ● ● ● ● ● ● tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 39 W; TVJ = 125°C non-repetitive Ptot TC = 25°C ICM = 70 VCEK £ VCES A 10 µs ● ● ● Advantages 280 W ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 35 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.2 2.6 2.8 V V ● Typical Applications ● ● VGE(th) IC = 1.2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 4.5 6.5 V 2 mA mA 200 nA 2 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 39 W 100 80 500 70 5.4 4.2 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A 2000 140 pF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved space savings reduced protection circuits package designed for wave soldering ● AC motor control AC servo and robot drives power supplies 0.44 K/W 023 Symbol 1-4 MWI 35-12 A7 MWI 35-12 A7T Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 35 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 1.9 V V IRM trr IF = 35 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 20 200 A ns RthJC (per diode) 50 33 Conduction A A Characteristic Values min. typ. max. 2.8 1.19 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.6 V; R0 = 28 mW Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 24.9 mW Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kW K Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C VISOL IISOL £ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions 5 Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight Free Wheeling Diode (typ.) Cth1 = 0.081 J/K; Rth1 = 0.973 K/W Cth2 = 0.915 J/K; Rth2 = 0.217 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. Rpin-chip dS dA IGBT (typ.) Cth1 = 0.166 J/K; Rth1 = 0.342 K/W Cth2 = 1.921 J/K; Rth2 = 0.098 K/W 6 6 mW mm mm 0.02 K/W 180 g Higher magnification see outlines.pdf © 2000 IXYS All rights reserved 2-4 MWI 35-12 A7 MWI 35-12 A7T 80 A 70 IC 80 VGE=17V TJ = 25°C 15V 60 13V 50 11V IC VGE=17V TJ = 125°C A 70 15V 60 13V 50 40 40 30 30 20 20 9V 10 11V 9V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 80 VCE = 20V A 70 TJ = 125°C A70 TJ = 25°C 60 IF 60 50 50 40 40 30 30 20 20 10 10 TJ = 25°C 0 0 5 6 7 8 9 10 0 11 V 1 2 Fig. 3 Typ. transfer characteristics 4 V Fig. 4 Typ. forward characteristics of free wheeling diode 300 60 20 V VCE = 600V IC 3 VF VGE VGE 3.5 V Fig. 2 Typ. output characteristics 80 IC 2.5 3.0 VCE = 35A A 15 ns IRM trr trr 200 40 10 20 IRM 5 0 TJ = 125°C VR = 600V IF = 35A MWI35-12A7 0 0 20 40 60 80 100 120 140 160 nC QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved 100 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 MWI 35-12 A7 MWI 35-12 A7T Eon 16 160 mJ ns 12 120 12 mJ 10 t 8 6 VCE = 600V VGE = ±15V tr Eon 0 20 40 60 0 0 VCE = 600V VGE = ±15V IC = 35A TJ = 125°C Eon 15 td(on) 20 40 60 0 80 A Fig. 8 Typ. turn off energy and switching times versus collector current 240 10 ns mJ 180 tr t td(off) VCE = 600V VGE = ±15V IC = 35A TJ = 125°C 8 Eoff 1500 ns 1200 t Eoff 6 Eon 10 900 120 5 60 0 0 0 20 40 60 80 100 120 140 160 RG W 4 600 2 300 0 10 A 70 K/W 1 50 RG = 39W TJ = 125°C VCEK < VCES 40 30 20 20 40 60 80 100 120 140 160 RG W 0 Fig.10 Typ. turn off energy and switching times versus gate resistor 80 60 tf 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 100 IC Fig. 7 Typ. turn on energy and switching times versus collector current mJ 200 tf IC 20 300 RG = 39W TJ = 125°C 2 0 80 A 400 t VCE = 600V VGE = ±15V 4 RG = 39W 40 TJ = 125°C 4 td(off) Eoff 8 80 td(on) 0 Eoff 600 ns 500 ZthJC diode 0.1 IGBT 0.01 0.001 10 single pulse 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 0.0001 0.00001 0.0001 0.001 MWI35-12A7 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 4-4