MWI450-12E9

MWI 450-12 E9 IC80 = 440 A VCES = 1200 V VCE(sat) typ. = 2.2 V IGBT Modules Sixpack 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 E72873 3 See outline drawing for pin arrangement 5 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 125°C 1200 V ± 20 V 640 440 A A TC = 25°C TC = 80°C RBSOA RG = 2.7 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 2.7 Ω TVJ = 125°C; non-repetitive; VCEmax < VCES Ptot TC = 25°C Symbol Conditions ICM = 900 VCEK < VCES A 10 µs 2.2 kW e IC25 IC80 -o u VGES s Characteristic Values IC = 450 A; VGE = 15 V VGE(th) IC = 18 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V td(on) tr td(off) tf Eon Eoff Cies QGon p IGES TVJ = 25°C TVJ = 125°C h VCE(sat) a (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.5 2.4 V V 6.5 V 1 21 mA mA 600 nA 4.5 TVJ = 25°C TVJ = 125°C 6 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 450 A VGE = ±15 V; RG = 2.7 Ω ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 450 A 33 3.3 nF µC IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0.057 Advantages • space savings • reduced protection circuits • package designed for wave soldering Typical Applications 190 116 475 100 35 47 RthJC • NPT3 IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate t Symbol • AC motor control • AC servo and robot drives • power supplies K/W 20100401a 1-5 MWI 450-12 E9 Diodes Symbol Conditions IF80 TC = 80°C 450 IFRM tp = 1 ms 900 2 Maximum Ratings It TVJ = 125°C; t = 10 ms; VR = 0 V Symbol Conditions A A 2 35000 As Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VF IF = 450 A; VGE = 0 V; TVJ = 25°C IRM IF = 450 A; diF/dt = 3500 A/µs; TVJ = 125°C; VR = 800 V typ. max. 2.2 RthJC V 200 A 0.075 K/W Temperature Sensor NTC R25 B25/50 Characteristic Values Module Conditions TVJ TJM Tstg operating 4.75 5.0 3375 5.25 kΩ K Maximum Ratings -40...+125 +150 -40...+125 IISOL < 1 mA; 50/60 Hz Mounting torque (M5) Terminal connection torque (M6) Symbol Conditions h a s VISO Md ) max. e Symbol typ. -o T = 25°C min. t Conditions u Symbol Rtherm-chip* Resistance terminal to chip Creepage distance on surface Strike distance in air RthCH with heatsink compound p dS dA Weight °C °C °C 3400 V~ 3-6 3-6 Nm Nm Characteristic Values min. typ. 0.55 12.7 10 max. mΩ mm mm 0.01 K/W 900 g ) * V = VCEsat + 2x Rtherm-chip·IC resp. V = VF + 2x R·IF IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100401a 2-5 MWI 450-12 E9 p h a s e -o u t Dimensions in mm (1 mm = 0.0394") = tolerance for all dimensions: Diode IGBT τi Ri τi Ri 2.884·10-5 1·10-5 -3 -5 2.344·10-5 1·10-5 -4 5·10-5 1.523·10 5·10 5.97·10 7.617·10-3 0.012 5.97·10-3 0.015 0.03 0.078 0.023 0.075 0.036 0.82 0.028 0.69 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100401a 3-5 MWI 450-12 E9 TJ = 25°C 800 800 11 V 13 V 15 V 17 V 19 V 400 9V 200 400 200 2 VCE [V] 4 0 6 TJ = 125°C VGE [V] 10 VCE = 600 V IC = 100 A 0.0 1.0 1.5 2.0 2.5 300 0 6000 TJ = 125°C VR = 600 V IF = 300 A 200 100 3.3 Ω 5000 6.8 Ω 4000 3000 18 Ω 2000 IRM -10 trr 18 Ω 1 2 3 QG [µC] Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 3.5 12 Ω -5 0 3.0 Fig. 4 Typ. forward characteristics of free wheeling diode IRM [A] VGE [V] 5 0.5 400 p 10 TJ = 125°C VF [V] h 15 6 TJ = 25°C 0 a Fig. 3 Typ. transfer characteristics 12 e 200 TJ = 25°C 8 4 400 -o 400 6 VCE [V] u 600 IF [A] 600 s IC [A] 800 0 2 Fig. 2 Typ. output characteristics 800 200 0 0 trr [ns] 0 Fig. 1 Typ. output characteristics -15 9V t 0 11 V 13 V 15 V 17 V 19 V 600 IC [A] IC [A] 600 TJ = 125°C 12 Ω 1000 2000 6.8 Ω 3.3 Ω 3000 1000 0 4000 -di/dt [A/µs] Fig. 6 Typ. turn off characteristics of free wheeling diode 20100401a 4-5 MWI 450-12 E9 60 240 td(on) 50 120 600 100 500 80 30 RG = 1.6 Ω TVJ = 125°C tr 120 20 Erec(off) 60 td(off) RG = 1.6 Ω TVJ = 125°C 40 200 20 Eon 0 0 100 200 300 400 500 600 700 800 900 Eoff 200 400 IC [A] IC [A] Fig. 7 Typ. turn on energy and switching times versus collector current 300 200 50 100 Erec(off) 15 RG [Ω] 20 25 h 0 18 Ω 12 Ω 15 tf 0 5 10 15 20 25 Fig. 10 Typ. turn off energy and switching times versus gate resistor diode 65 0.06 3.3 Ω 55 IGBT single pulse 0.04 50 0.02 18Ω 10 45 Erec(off) 5 0 30 RG [Ω] ZthJC [K/W] 12 Ω 20 Qrr 500 0.08 60 6.8 Ω 1000 10 30 Qrr [nC] 25 Eoff 20 0 3.3 Ω 1500 30 70 p Erec(off) [mJ] 30 VR = 600 V IF = ±15 V TVJ = 125°C t u 40 Fig. 9 Typ. turn on energy and switching times versus gate resistor 35 2000 50 s 10 60 a 5 70 e 100 0 80 2500 td(off) VCE = 600 V VGE = ±15 V IC = 450 A TVJ = 125°C 90 400 150 0 100 600 Eoff [mJ] 200 tr 0 800 Fig. 8 Typ. turn off energy and switching times versus collector current 500 Eon 600 -o 250 E [mJ] td(on) VCE = 600 V VGE = ±15 V IC = 450 A TVJ = 125°C t [ns] 300 100 tf t [ns] 0 300 60 10 0 400 VCE = 600 V VGE = ±15 V t [ns] VCE = 600 V VGE = ±15 V Eoff [mJ] 40 t [ns] E [mJ] 180 1000 2000 3000 40 4000 di/dt [A/µs] Fig. 11 Typ. turn off energy and recovered charge of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0.00 MWI450-12E9 1 10 100 t [ms] 1000 10000 Fig. 12 Typ. transient thermal impedance 20100401a 5-5