MWI50-12T7T

MWI 50-12T7T Six-Pack Trench IGBT IC25 = 80 A = 1200 V VCES VCE(sat) typ. = 1.7 V Part name (Marking on product) MWI 50-12T7T 15, 16 25, 26 17 1 5 9 2 6 10 NTC 18 23, 24 21, 22 19, 20 E72873 Pin configuration see outlines. 3 4 7 11 8 12 13, 14 27, 28 Features: Application: Package: • Trench IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies • "E2-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting • Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100831d 1-7 MWI 50-12T7T Output Inverter T1 - T6 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. TVJ = 25°C max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 80 50 A A TC = 25°C 270 W collector emitter saturation voltage IC = 50 A; VGE = 15 V on chip level TVJ = 25°C TVJ = 125°C 1.7 2.0 2.15 V V VGE(th) gate emitter threshold voltage IC = 2 mA; VGE = VCE TVJ = 25°C 5.8 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C 2 mA mA IGES gate emitter leakage current VGE = ±20 V 400 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = ±15 V; IC = 50 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 18 W LS = 70 nH TVJ = 125°C RBSOA reverse bias safe operating area VGE = ±15 V; RG = 18 W TVJ = 125°C VCEK = 1150 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; RG = 18 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) 5 2 TVJ = 125°C 3500 pF 470 nC 90 50 520 90 5 6.5 ns ns ns ns mJ mJ 100 A 10 µs A 0.46 K/W 200 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions max. Unit VRRM max. repetitve reverse voltage TVJ = 25°C min. typ. 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 85 57 A A VF forward voltage IF = 60 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 1.95 1.95 2.2 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1200 A/µs IF = 60 A; VGE = 0 V TVJ = 125°C 8 60 350 2.5 RthJC thermal resistance junction to case (per diode) µC A ns mJ 0.6 K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100831d 2-7 MWI 50-12T7T Temperature Sensor NTC Symbol R25 B25/50 Definitions resistance Conditions Definitions Conditions TC = 25°C min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K min. -40 Ratings typ. max. 125 150 125 Unit °C °C °C 2500 V~ Module Symbol TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Md mounting torque (M5) dS dA creep distance on surface strike distance through air Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink -40 IISOL < 1 mA; 50/60 Hz 200 2.7 3.3 6 6 with heatsink compound Weight Nm mm mm 5 mW 0.02 K/W 180 g Equivalent Circuits for Simulation I V0 R0 Symbol Definitions V0 R0 IGBT V0 R0 Diode Ratings Conditions typ. max. Unit T1 - T6 TVJ = 125°C 1.0 20 V mW D1 - D6 TVJ = 125°C 1.1 14.2 V mW IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved min. 20100831d 3-7 MWI 50-12T7T Circuit Diagram 15, 16 25, 26 17 1 5 9 2 6 10 3 7 11 4 8 12 23, 24 21, 22 19, 20 NTC 18 13, 14 27, 28 Outline Drawing Detail Y Detail X Ø 2.1; l=6 15° ±0.05 1.2 baseplate typ. 100 µm convex over 75 mm before mounting ±0.05 Ø 2.1 75.7 1.5 Ø 2.5 ±0.1 +0.3 Ø6 Detail Z 82.3 ±1° 0.8 7 -0.5 ±0.02 Z 0.8 Y 17±0.5 20.5 ±0.1 3.5-0.5 Dimensions in mm (1 mm = 0.0394“) B 20 19 22 21 6 86.1 76.98 16 15 27 28 14 13 93 107.5 7.62 0 7.62 A 11.43 20.95 76.98 73.17 1112 65.55 9 10 61.74 7 8 54.12 5 6 50.31 38.88 3 4 42.69 19.83 27.45 16.02 1 2 31.26 11 11.43 18 17 25 26 Ø5.5 ±0.2 45 20.95 X 24 23 38.4 32 ±0.2 73.17 57.93 61.74 38.88 42.69 23.64 0 19.83 72.7 j n0.4 A B ±0.2 ±0.3 Product Marking Ordering Part Name Marking on Product Standard MWI 50-12T7T MWI50-12T7T IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 6 501972 20100831d 4-7 MWI 50-12T7T Inverter T1 - T6 100 100 80 IC [A] 80 TVJ = 125°C 60 IC TVJ = 25°C [A] 40 20 11 V VGE = 13 V 15 V 17 V 19 V VGE = 15 V 60 TVJ = 125°C 9V 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 VCE [V] 0 1 2 3 4 5 VCE [V] Fig. 2 Typ. outpurt characteristics Fig. 1 Typ. outpurt characteristics 20 100 VCE = 20 V IC = 50 A VCE = 600 V 15 80 10 IC [A] 60 40 VGE 5 [V] 0 -5 20 0 TVJ = 125°C -10 TVJ = 25°C 4 5 6 7 8 9 10 11 -15 12 0 100 200 Fig. 3 Typ. transfer characteristics 500 600 60 70 12 12 VCE = 600 V VGE = ±15 V 10 RG = 18 Ω TVJ = 125°C E off VCE = 600 V VGE = ±15 V IC = 50 A TVJ = 125°C 10 8 8 Eon E [mJ] [mJ] 6 Eoff 6 Eon 4 4 E rec Erec 2 2 0 400 Fig. 4 Typ. turn-on gate charge 14 E 300 Qg [nC] VGE [V] 0 20 40 60 80 100 IC [A] Fig. 5 Typical switching losses versus collector current impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0 10 20 30 40 50 RG [Ω] Fig. 6 Typical switching losses versus gate resistancae 20100831d 5-7 MWI 50-12T7T Inverter T1 - T6 120 14 100 12 80 10 TVJ = 125°C IF [A] VR = 600 V 120 A Qrr 8 60 60 A [µC] 6 40 TVJ = 125°C 4 TVJ = 25°C 20 30 A 2 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 3.0 600 Fig. 7 Typ. Forward current versus VF 800 900 1000 1100 1200 1300 diF /dt [A/µs] Fig. 8 Typ. reverse recovery charge Qrr vs. di/dt 90 700 TVJ = 125°C 80 120 A 60 60 A IRR 50 30 A [A] 40 TVJ = 125°C 600 VR = 600 V 70 VR = 600 V 500 trr 400 120 A 60 A [ns] 300 30 30 A 200 20 100 10 0 600 700 800 0 600 900 1000 1100 1200 1300 diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt 4.0 700 800 900 1000 1100 1200 1300 diF /dt [A/µs] Fig. 10 Typ. recovery time trr versus di/dt 12 TVJ = 125°C 120 A VR = 600 V 3.2 Erec 700 60 A 2.4 Qrr [mJ]1.6 30 A 0.8 [µC] 10 VCE = 600 V VGE = ±15 V 8 RG = 18 Ω TVJ = 125°C 6 4 2 0.0 600 700 800 900 1000 1100 1200 1300 diF /dt [A/µs] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0 0 10 20 30 40 50 60 70 80 90 100 110 IF [A] Fig. 12 Typ.reverse recovery charge Qrr versus IF 20100831d 6-7 MWI 50-12T7T NTC Module 1 100000 Diode IGBT 10000 ZthJC R 0.1 [K/W] [Ω] 1000 100 25 50 75 100 125 150 TC [°C] Fig. 13 Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 14 Typ. transient thermal impedance 20100831d 7-7