MWI75-12A8

MWI 75-12 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 125 A = 1200 V VCES VCE(sat) typ. = 2.2 V 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 15 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 125 85 ICM = 150 VCEK ≤ VCES 10 500 V V A A A µs W Features • NPT IGBT technology • low saturation voltage • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages • space savings • reduced protection circuits • package designed for wave soldering Typical Applications • AC motor control • AC servo and robot drives • power supplies Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.5 4.5 3 400 100 50 650 50 12.1 10.5 5.5 350 2.6 6.5 5 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.25 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 3 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 75 A VGE = ±15 V; RG = 15 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 75 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-2 451 MWI 75-12 A8 Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 150 100 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 75 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 75 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.2 1.6 79 220 2.6 V V A ns 0.41 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.5 V; R0 = 13.5 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 4 mΩ Thermal Response Conditions operating Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 °C °C °C V~ Nm Free Wheeling Diode (typ.) Cth1 = 0.227 J/K; Rth1 = 0.321 K/W Cth2 = 1.328 J/K; Rth2 = 0.089 K/W IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions IGBT (typ.) Cth1 = 0.295 J/K; Rth1 = 0.186 K/W Cth2 = 1.750 J/K; Rth2 = 0.064 K/W Characteristic Values min. typ. max. 1.8 mΩ mm mm 0.01 300 K/W g Creepage distance on surface Strike distance in air with heatsink compound 10 10 Dimensions in mm (1 mm = 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 2-2 451 MWI 75-12 A8 250 A IC 15 V 13 V TVJ = 25°C VGE = 17 V 250 A IC 200 TVJ = 125°C VGE = 17 V 15 V 13 V 200 150 11 V 150 11 V 100 50 9V 100 50 0 9V 0 0 1 2 3 VCE 4 V 5 0 1 2 3 VCE 4 V5 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 100 A VCE = 20 V 250 A IF 200 150 TVJ = 125°C 80 IC 60 40 20 0 4 5 6 7 8 VGE TVJ = 125°C 100 50 TVJ = 25°C TVJ = 25°C 0 9 V 10 0 1 2 VF 3 V Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 320 20 V 200 ns trr TVJ = 125°C VR = 600 V IF = 100 A VCE = 600 V IC = 100 A A IRM 15 VGE 240 trr 10 160 100 5 80 IRM 0 0 100 200 300 QG nC 0 400 0 MWI75-12A8 200 400 600 -di/dt 800 s A/µ 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 451 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 3-2 MWI 75-12 A8 32 mJ Eon VCE = 600 V VGE = ±15 V RG = 15 Ω TVJ = 125°C td(on) 8 ns 6 t 4 20 mJ Eoff 15 VCE = 600 V VGE = ±15 V RG = 15 Ω TVJ = 125°C 10 ns 75 24 16 10 50 8 Eon 2 5 25 0 0 40 80 IC 0 0 0 40 80 120 IC A 120 A 160 0 160 Fig. 7 Typ. turn on energy and switching times versus collector current 32 mJ Eon 24 td(on) Fig. 8 Typ. turn off energy and switching times versus collector current 15 mJ t Eoff n 8 ns 6 10 VCE = 600 V VGE = ±15 V IC = 75 A TVJ = 125°C 16 VCE = 600 V VGE = ±15 V IC = 75 A TVJ = 125°C 4 5 2 8 Eon 0 0 10 20 30 40 RG 50 Ω 60 0 0 0 10 20 30 40 RG 50 Ω 60 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 200 A ICM Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 ZthJC IGBT diode 150 RG = 15 Ω TVJ = 125°C 100 0.01 50 0.001 single pulse 0 0 200 400 600 800 1000 1200 1400 V VCE 0.0001 0.0001 MWI75-12A8 0.001 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. Fig. 12 Typ. transient thermal impedance 451 © 2004 IXYS All rights reserved 4-2