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MWI75-12E8

MWI75-12E8

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    E3

  • 描述:

    MOD IGBT SIXPACK RBSOA 1200V E3

  • 数据手册
  • 价格&库存
MWI75-12E8 数据手册
Advanced Technical Information MWI 75-12 E8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 130 A = 1200 V VCES VCE(sat) typ. = 2.0 V 1 2 5 6 9 10 19 17 15 3 4 14, 20 7 8 11 12 B3 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 15 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 130 90 ICM = 150 VCEK ≤ VCES 10 500 V V A A A µs W Features • IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate VCE = 900 V; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C non-repetitive TC = 25°C Typical Applications Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.2 4.5 1.1 400 150 60 680 50 9.0 7.5 5.7 0.75 2.5 6.5 1.1 V V V mA mA nA ns ns ns ns mJ mJ nF µC 0.25 K/W 142 • AC drives • power supplies with power factor correction VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 3 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 75 A VGE = ±15 V; RG = 15 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 75 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved 1-2 MWI 75-12 E8 Dimensions in mm (1 mm = 0.0394") Conditions TC = 25°C TC = 80°C Maximum Ratings 150 100 A A Diodes Symbol IF25 IF80 Symbol VF IRM trr RthJC Conditions IF = 75 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 75 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.2 1.6 79 220 2.5 V V A ns 0.41 K/W B3 Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 10 10 0.01 300 IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 3-6 °C °C V~ Nm Higher magnification on page B3 - 72 Characteristic Values min. typ. max. 1.8 mΩ mm mm K/W g © 2001 IXYS All rights reserved 2-2
MWI75-12E8 价格&库存

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