MWI80-12T6K

Advanced Technical Information MWI 80-12 T6K IC25 = 80 A = 1200 V VCES VCE(sat) typ. = 2.0 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 10, 23 14 13 NTC 18 17 22 21 11, 12 15, 16 19, 20 8 7 6 5 9, 24 4 3 2 1 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 18 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 18 Ω; TVJ = 125°C SCSOA; non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 80 56 100 VCES 10 270 V V A A A µs W Features • Trench IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.8 400 90 50 520 90 5 6.5 3600 470 0.2 2.4 6.5 1 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.46 K/W K/W Typical Applications • AC drives • power supplies with power factor correction VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthCH IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 18 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 1-2 502 Advanced Technical Information MWI 80-12 T6K Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 80 51 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC RthCH Conditions IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 50 A; diF/dt = -600 A/µs; TVJ = 100°C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.3 1.6 35 200 0.25 2.6 V V A ns 0.65 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = tbd; R0 = tbd Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.5 V; R0 = 6 mΩ Thermal Response Temperature Sensor NTC Symbol R25 B25/85 Module Symbol TVJ TVJM Tstg VISOL Md Symbol dS dA Weight Conditions operating Maximum Ratings -40...+125 -40...+150 -40...+125 2500 2.0 - 2.2 °C °C °C V~ Nm Conditions T = 25°C Characteristic Values min. typ. max. 4.45 4.7 3510 5.0 k Ω K IGBT (typ.) Cth1 = tbd J/K; Rth1 = tbd K/W Cth2 = tbd J/K; Rth2 = tbd K/W Free Wheeling Diode (typ.) Cth1 = tbd J/K; Rth1 = tbd K/W Cth2 = tbd J/K; Rth2 = tbd K/W IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M4) Conditions Creepage distance on surface Strike distance in air Characteristic Values min. typ. max. 12.7 12.7 40 mm mm g Dimensions in mm (1 mm = 0.0394") © 2005 IXYS All rights reserved 2-2 502