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N4240EA480

N4240EA480

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO-200AF

  • 描述:

    THYRISTOR PHASE 4240A 4800V DISC

  • 数据手册
  • 价格&库存
N4240EA480 数据手册
Date: - 5th August, 2020 Data Sheet Issue: - A1 Phase Control Thyristor Types N4240EA480 and N4240EA520 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 4800-5200 V VDSM Non-repetitive peak off-state voltage, (note 1) 4800-5200 V VRRM Repetitive peak reverse voltage, (note 1) 4800-5200 V VRSM Non-repetitive peak reverse voltage, (note 1) 4900-5300 V MAXIMUM LIMITS UNITS OTHER RATINGS IT(AV) Mean on-state current. Tsink=55°C, (note 2) 4240 A IT(AV) Mean on-state current. Tsink=85°C, (note 2) 3020 A IT(AV) Mean on-state current. Tsink=85°C, (note 3) 1700 A IT(RMS) Nominal RMS on-state current. Tsink=25°C, (note 2) 8200 A IT(d.c.) D.C. on-state current. Tsink=25°C, (note 4) 7515 A ITSM Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5) 43.2 kA ITSM2 Peak non-repetitive surge tp=10ms, VRM10V, (note 5) 47.5 kA I2 t I2 t 9.33×106 A2s I2 t I2t capacity for fusing tp=10ms, VRM10V, (note 5) 10.26×106 A2s Maximum rate of rise of on-state current (continuous), (Note 6) 75 A/µs Maximum rate of rise of on-state current (repetitive), (Note 6) 150 A/µs Maximum rate of rise of on-state current (non-repetitive), (Note 6) 300 A/µs diT/dt capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5) VRGM Peak reverse gate voltage 5 V PG(AV) Mean forward gate power 4 W PGM Peak forward gate power 50 W VGD Non-trigger gate voltage, (Note 7) 0.25 V THS Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C Notes: 1) De-rating factor of 0.13% per °C is applicable for T j below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C. 7) Rated VDRM. Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. Page 1 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 2.50 V0 Threshold voltage - - 1.039 V rs Slope resistance - - 0.216 m 1000 - - dv/dt Critical rate of rise of off-state voltage ITM=6800A V VD=80% VDRM, Linear ramp, gate o/c V/s IDRM Peak off-state current - - 200 Rated VDRM mA IRRM Peak reverse current - - 200 Rated VRRM mA VGT Gate trigger voltage - - 3.0 IGT Gate trigger current - - 300 IH Holding current - - 1000 tgd Gate controlled turn-on delay time - 2.2 3.0 tgt Turn-on time - 2.8 5.0 Qrr Recovered Charge - 14 19 Qra Recovered Charge, 50% chord - 9.8 - Irm Reverse recovery current - 320 - trr Reverse recovery time, 50% chord - 60 - - 950 - tq RthJK Turn-off time Thermal resistance, junction to heatsink F Mounting force Wt Weight - V Tj=25°C, VD=10V, IT=3A mA Tj=25°C mA IFG=2A, tr=0.5µs, VD=60%VDRM, ITM=2000A, di/dt=10A/µs, Tj=25°C µs mC mC ITM=4000A, tp=2000µs, di/dt=10A/µs, Vr=100V A µs ITM=4000A, tp=2000µs, di/dt=10A/µs, Vr=100V, Vdr=80%VDRM, dVdr/dt=20V/µs (Note 2) ITM=4000A, tp=2000µs, di/dt=10A/µs, Vr=100V, Vdr=80%VDRM, dVdr/dt=200V/µs (Note 2) µs - 1500 - - 0.005 Double side cooled K/W - - 0.012 Cathode side cooled K/W - - 0.009 Anode side cooled K/W 76 - 93 - 1.6 - (Note 3) kN kg Notes: 1) Unless otherwise stated Tj=125°C. 2) Standard test condition for tq dVdr/dt=200V/µs. For other dVdr/dt values please consult factory. 3) For other clamp forces please consult factory. Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. Page 2 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Notes on Ratings and Characteristics 1.0 Voltage Grade Table VDRM VDSM VRRM V 4800 5200 Voltage Grade 48 52 VRSM V 4900 5300 VD VR DC V 2880 3120 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T j below 25°C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device. IGM 4A/µs IG tp1 The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT. Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. Page 3 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 8.0 Computer Modelling Parameters 8.1 Device Dissipation Calculations I AV = T Rth W AV = − V0 + V0 + 4  ff  rs  WAV 2  ff 2  rs 2 and: T = T j max − THs Where V0=1.039V, rs=0.216m Rth = Supplementary thermal impedance, see table below. ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle 30° 60° 90° 120° 180° 270° d.c. Square wave Double Side Cooled 0.00556 0.00549 0.00543 0.00538 0.00527 0.00514 0.00500 Square wave Cathode Side Cooled 0.01292 0.01285 0.01278 0.01271 0.01259 0.01244 0.01200 Sine wave Double Side Cooled 0.00551 0.00543 0.00537 0.00531 0.00515 Sine wave Cathode Side Cooled 0.01286 0.01277 0.01270 0.01263 0.01245 Form Factors Conduction Angle 30° 60° 90° 120° 180° 270° d.c. Square wave 3.46 2.45 2 1.73 1.41 1.15 1 Sine wave 3.98 2.78 2.22 1.88 1.57 8.2 Calculating VT using ABCD Coefficients The on-state characteristic IT vs. VT, on page 5 is represented in two ways; (i) the well established Vo and rs tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below: VT = A + B  ln(I T ) + C  I T + D  I T The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 25°C Coefficients 125°C Coefficients A 1.580531 A 0.6698452 B -0.06506721 B 0.03484715 C 1236121×10-4 C 1.712464×10-4 D 4183815×10-3 D 4.354445×10-3 Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. Page 4 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 8.3 D.C. Thermal Impedance Calculation −t   rt =  rp  1 − e p  p =1  p=n     Where p = 1 to n, n is the number of terms in the series and: t rt rp p = = = = Duration of heating pulse in seconds. Thermal resistance at time t. Amplitude of pth term. Time Constant of rth term. D.C. Double Side Cooled 3 Term 1 2 rp 2.761048×10-3 1.738044×10-3 5.209655×10-4 p 0.8332002 0.1416775 0.01436119 D.C. Cathode Side Cooled Term rp p 1 9.855141 ×10-3 4.147275 Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. 2 3 1.983482×10-3 4.775474×10-4 0.1396446 0.0116827 Page 5 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Curves Figure 1 - On-state characteristics of Limit device Figure 2 - Transient Thermal Impedance 0.1 10000 N4240EA480-520 Issue A1 N4240EA480-520 Issue A1 KSC 0.012K/W ASC 0.009K/W DSC 0.005K/W Tj = 125 C Tj = 25 C Transient thermal impedance (K/W) Instantaneous On-state current - ITM (A) 0.01 1000 0.001 0.0001 100 0 0.5 1 1.5 2 2.5 0.00001 0.0001 3 0.001 0.01 Instantaneous On-state voltage - VTM (V) Figure 3 - Gate Characteristics - Trigger Limits 1 10 100 Figure 4 - Gate Characteristics - Power Curves N4240EA480-520 Issue A1 N4240EA480-520 Issue A1 Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. 0.1 Time (s) Page 6 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Figure 5 – Recovered Charge, Qrr Figure 6 – Recovered charge, Qra (50% chord) N4240EA480-520 Issue A1 Figure 7 – Reverse recovery current, Irm N4240EA480-520 Issue A1 Figure 8 – Reverse recovery time, trr N4240EA480-520 Issue A1 Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. N4240EA480-520 Issue A1 Page 7 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave) Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave) 150 20000 30 60 90 120 180 N4240EA480-520 Issue A1 18000 125 Maximum permissable heatsink temperature (°C) 16000 Maximum forward dissipation (W) 14000 12000 10000 8000 6000 100 75 50 4000 25 30 60 90 120 180 2000 N4240EA480-520 Issue A1 0 0 0 1000 2000 3000 4000 5000 6000 0 Mean forward current (A) (Whole cycle averaged) 1000 2000 3000 4000 5000 6000 Mean forward current (A) (Whole cycle averaged) Figure 11 – On-state current vs. Power dissipation – Figure 12 – On-state current vs. Heatsink Double Side Cooled (Square wave) temperature - Double Side Cooled (Square wave) 150 25000 N4240EA480-520 Issue A1 N4240EA480-520 Issue A1 125 Maximum permissible heatsink temperature (°C) Maximum forward dissipation (W) 20000 15000 d.c. 270 180 120 90 60 30 10000 100 30 60 90 120 180 270 d.c. 75 50 5000 25 0 0 2000 4000 6000 8000 Mean Forward Current (A) (Whole Cycle Averaged) Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. 0 0 2000 4000 6000 8000 Mean Forward Current (A) (Whole Cycle Averaged) Page 8 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Figure 13 – On-state current vs. Power dissipation – Figure 14 – On-state current vs. Heatsink Cathode Side Cooled (Sine wave) temperature - Cathode Side Cooled (Sine wave) 150 9000 N4240EA480-520 Issue A1 8000 30 60 90 N4240EA480-520 Issue A1 180 120 125 Maximum permissable heatsink temperature (°C) Maximum forward dissipation (W) 7000 6000 5000 4000 3000 2000 100 75 50 25 30 60 90 120 180 1000 0 0 500 1000 1500 2000 2500 3000 0 3500 0 Mean forward current (A) (Whole cycle averaged) 500 1000 1500 2000 2500 3000 3500 Mean forward current (A) (Whole cycle averaged) Figure 15 – On-state current vs. Power dissipation – Figure 16 – On-state current vs. Heatsink Cathode Side Cooled (Square wave) temperature - Cathode Side Cooled (Square wave) 150 9000 N4240EA480-520 Issue A1 N4240EA480-520 Issue A1 8000 125 Maximum permissible heatsink temperature (°C) Maximum forward dissipation (W) 7000 6000 5000 4000 3000 d.c. 270 180 120 90 60 30 2000 100 30 60 90 120 180 270 d.c. 75 50 25 1000 0 0 0 1000 2000 3000 4000 5000 Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. 0 1000 2000 3000 4000 5000 Mean Forward Current (A) (Whole Cycle Averaged) Mean Forward Current (A) (Whole Cycle Averaged) Page 9 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Figure 17 – Maximum surge and I2t Ratings 1.00E+08 1000000 N4240EA480-520 Issue A1 I2t: VRRM 10V Total peak half sine surge current (A) 1.00E+07 100000 Maximum I2t (A2s) I2t: 60% VRRM Tj (initial) = 125 C ITSM: VRRM 10V ITSM: 60% VRRM 1.00E+06 10000 1 3 5 10 Duration of surge (ms) Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. 1 5 10 50 100 Duration of surge (cycles @ 50Hz) Page 10 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Outline Drawing & Ordering Information 101A411 ORDERING INFORMATION (Please quote 10 digit code as below) N4240 EA  0 Fixed Type Code Fixed Outline Code Voltage Code 48 & 52 Fixed turn-off time code Typical order code: N4240EA480 – 4800V VDRM, VRRM, 1000V/µs dv/dt, 26mm clamp height capsule. IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 E-mail: sales@ixysuk.com IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: service@ixyslongbeach.com www.littelfuse.com https://www.littelfuse.com/products/power-semiconductors/high-power.aspx The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. Page 11 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. Page 12 of 12 August 2020
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