VDI125-12P1

VID 125-12P1 VIO 125-12P1 VDI 125-12P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO IJK IC25 = 138 A = 1200 V VCES VCE(sat) typ. = 2.8 V VID IK10 VDI AC1 X15 SV18 L9 NTC T16 PS18 A S LMN L9 X15 NTC AC1 X16 B3 Pin arangement see outlines IK10 F1 X16 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25°C TC = 80°C VGE = ±15 V; RG = 15 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 138 94 150 VCES 10 568 V V A A A µs W Features • NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages • space and weight savings • reduced protection circuits • leads with expansion bend for stress relief Typical Applications • AC and DC motor control • AC servo and robot drives • power supplies • welding inverters Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.8 3.2 4.5 3.4 6.5 5 16 320 100 50 650 50 12.1 10.5 5.5 0.44 V V V mA mA nA ns ns ns ns mJ mJ nF 0.22 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 125 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 3 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 75 A VGE = 15/0 V; RG = 15 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 1-4 303 VID 125-12P1 VIO 125-12P1 VDI 125-12P1 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25°C TC = 80°C Conditions IF = 75 A; TVJ = 25°C TVJ = 125°C IF = 75 A; diF/dt = 750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 µm) VIO Maximum Ratings 154 97 A A Characteristic Values min. typ. max. 2.2 1.6 79 220 0.9 2.5 V V A ns 0.45 K/W K/W B3 Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kΩ K VDI Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL ≤ 1 mA; 50/60 Hz mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 °C °C V~ Nm lb.in. m/s2 Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g VID IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 2-4 303 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. VID 125-12P1 VIO 125-12P1 VDI 125-12P1 175 A 150 IC 125 175 TJ = 125°C TJ = 25°C VGE=17V 15V 13V 11V A 150 IC 125 100 75 VGE=17V 15V 13V 11V 100 75 50 25 0 0,0 121T120 9V 50 25 0 9V 121T120 0,5 1,0 1,5 2,0 2,5 VCE 3,0 V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V VCE B3 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 150 VCE = 20V 125 A IC TJ = 25°C 300 A 250 IF 200 150 100 50 121T120 TJ = 125°C TJ = 25°C 100 75 50 25 0 5 6 7 8 9 10 VGE 0 121T120 11 V 0,5 1,0 1,5 2,0 2,5 VF 3,0 V 3,5 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 20 V VGE 15 VCE = 600V IC = 75A 120 A IRM trr 300 ns trr 80 200 10 40 5 IRM TJ = 125°C VR = 600V IF = 75A 100 0 0 100 200 300 QG 121T120 0 0 200 400 600 121T120 400 nC 800 s A/µ -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 3-4 303 VID 125-12P1 VIO 125-12P1 VDI 125-12P1 40 mJ Eon Eon td(on) tr 160 ns 120 t 80 20 mJ Eoff 15 Eoff td(off) 800 ns 600 t 400 30 20 10 VCE = 600V VGE = ±15V 10 VCE = 600V VGE = ±15V 40 RG = 15Ω TJ = 125°C 121T120 5 RG = 15Ω 200 TJ = 125°C 121T120 0 0 50 100 IC 0 0 0 50 100 IC tf 0 150 A 150 A B3 Fig. 7 Typ. turn on energy and switching times versus collector current 25 mJ Fig. 8 Typ. turn off energy and switching times versus collector current 25 mJ Eoff 20 Eon VCE = 600V VGE = ±15V IC = 75A TJ = 125°C td(on) Eon 200 ns 160 t 120 2000 VCE = 600V VGE = ±15V IC = 75A TJ = 125°C 20 15 10 5 td(off) ns 1600 t 1200 800 400 15 10 5 0 0 8 16 24 32 40 RG 121T120 Eoff tr 80 40 0 121T120 48 Ω 56 0 0 8 16 24 32 RG tf 40 48 Ω 56 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 1 K/W 0,1 ZthJC Fig.10 Typ. turn off energy and switching times versus gate resistor 200 A 160 ICM diode 120 80 40 0 0 200 400 600 VCE 121T120 0,01 RG = 15Ω TJ = 125°C VCEK < VCES IGBT 0,001 0,0001 single pulse VID...125-12P1 800 1000 1200 V 0,00001 0,00001 0,0001 0,001 0,01 t 0,1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 4-4 303