VGO 36
Single Phase Rectifier Bridge
IdAV = 36 A VRRM = 800-1600 V
Preliminary data
VRSM VDSM V 900 1300 1500 1700 VRRM VDRM V 800 1200 1400 1600 VGO 36-08io7 VGO 36-12io7 VGO 36-14io7 VGO 36-16io7 Type H N A G D K
Symbol IdAV x IdAVM x IFRMS, ITRMS IFSM, ITSM
Test Conditions TH = 85°C, module module per leg TVJ = 45°C; VR = 0 V TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 36 40 31 320 350 280 310 500 520 390 400 150 A A A A A A A A2s A2s A2s A2s A/ms A/ms V/ms V W W W W °C °C °C V~ V~ Nm lb.in. g
Features • Package with DCB ceramic base plate • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • • • • Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors
I2t
TVJ = 45°C VR = 0 V TVJ = TVJM VR = 0 V
(di/dt)cr
TVJ = 125°C repetitive, IT = 50 A f = 50 Hz, tP = 200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/2 • IdAV diG/dt = 0.3 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tp = 30 ms tp = 500 ms tp = 10 ms £ £ £
Advantages 500 1000 10 10 5 1 0.5 • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Small and light weight
(dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight
-40...+125 125 -40...+125 50/60 Hz, RMS IISOL £ 1 mA Mounting torque (M4) typ. t = 1 min t=1s 2500 3000 1.5 - 2 14 - 18 18
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated x for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions.
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© 2000 IXYS All rights reserved
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VGO 36
Symbol IR, ID VT, VF VT0 rT VGT IGT Test Conditions VR = VRRM; VD = VDRM IT, IF = 45 A; TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C TVJ = 125°C VD = 2/3 VDRM VD = 2/3 VDRM TVJ = 25°C TVJ = -40°C TVJ = 125°C £ £ £ £ £ £ £ £ £ £ £ £ typ. TVJ = TVJM TVJ = 25°C Characteristic Values £ £ £ 5 0.3 1.45 0.85 13 1.0 1.2 65 80 50 0.2 5 150 200 100 100 2 150 1.4 0.35 2.0 0.5 12.6 6.3 50 mA mA V V mW V V mA mA mA V mA mA mA mA mA ms ms K/W K/W K/W K/W mm mm m/s2
1000 µs tgd 100 typ. Limit TVJ = 25°C 0.1 1
1
10 V VG
1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C
2
3 6 4 5
VGD IGD IL
TVJ = TVJM; TVJ = TVJM; IG = 0.3 A; tG = 30 ms; diG/dt = 0.3 A/ms;
IGD, TVJ = 125°C
4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W
1
10
100
1000 IG
mA
IH tgd tq RthJC RthJK dS dA a
TVJ = 25°C; VD = 6 V; RGK = ¥ TVJ = 25°C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creepage distance on surface Creepage distance in air Max. allowable acceleration
Fig. 1 Gate trigger range
10
1 10
100 IG
mA 1000
Dimensions in mm (1 mm = 0.0394")
Fig. 2 Gate controlled delay time tgd
© 2000 IXYS All rights reserved
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