VID75-12P1

VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO IJK IC25 = 92 A = 1200 V VCES VCE(sat) typ. = 2.7 V VII OP9 VID IK10 VDI AC1 L9 X13 X15 SV18 L9 NTC T16 PS18 A S LMN E2 GH10 NTC L9 X15 F1 X15 NTC X16 AC1 X16 B3 Pin arangement see outlines K10 VX18 X16 IK10 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 92 62 100 VCES 10 379 V V A A A µs W Features • NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages • space and weight savings • reduced protection circuits • leads with expansion bend for stress relief Typical Applications • AC and DC motor control • AC servo and robot drives • power supplies • welding inverters Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.7 3.0 4.5 3.2 6.5 3.7 12.5 200 100 70 500 70 9.1 6.7 3.3 0.66 V V V mA mA nA ns ns ns ns mJ mJ nF 0.33 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 60 A VGE = 15/0 V; RG = 22 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 1-4 303 VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25°C TC = 80°C Conditions IF = 60 A; TVJ = 25°C TVJ = 125°C Maximum Ratings 103 65 A A Characteristic Values min. typ. max. 2.28 1.67 41 200 1.32 2.6 V V A ns 0.66 K/W K/W IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 µm) B3 Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight VID IISOL ≤ 1 mA; 50/60 Hz mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 °C °C V~ Nm lb.in. m/s2 Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 kΩ K VIO Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g VDI Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 2-4 303 VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 120 A TJ = 25°C VGE =17 V 15 V 13 V 11 V 100 IC 120 A TJ = 125°C 100 IC 80 60 40 VGE =17 V 15 V 13 V 11 V 80 60 40 9V 9V 20 0 0,0 81T120 20 0 81T120 0,5 1,0 1,5 2,0 2,5 VCE 3,0 V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V VCE B3 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 120 A VCE = 20 V TJ = 25°C 180 TJ = 125°C 100 IC A 150 IF TJ = 25°C 80 60 40 20 0 5 6 7 8 9 10 VGE 81T120 120 90 60 30 0 DWLP55-12 11 V 0,5 1,0 1,5 2,0 2,5 VF 3,0 V 3,5 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 120 A 20 V 300 ns trr VGE 15 VCE = 600 V IC = 50 A IRM trr 80 200 10 40 5 TJ = 125°C VR = 600 V IF = 50 A IRM 100 0 0 50 100 150 200 QG 81T120 0 0 200 400 600 81T120 250 nC 800 s A/µ -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 303 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 3-4 VDI 75-12P1 VII 75-12P1 VID 75-12P1 VIO 75-12P1 24 mJ Eon 120 ns 90 td(on) t 60 tr VCE = 600 V VGE = ±15 V RG = 2 2 Ω TJ = 125°C 81T120 12 mJ 600 Eoff ns 500 400 t VCE = 600 V VGE = ±15 V RG = 2 2 Ω TJ = 125°C 10 Eoff 18 td(off) 8 6 4 12 300 200 tf 81T120 6 Eon 30 2 0 100 0 0 0 20 40 60 IC 0 0 20 40 60 80 IC 80 100 A 100 A B3 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 240 20 mJ Eon 15 VCE = 600 V VGE = ±15 V I C = 50 A TJ = 125°C 10 mJ td(on) Eon ns 180 t Eoff 8 6 VCE = 600 V VGE = ±15 V I C = 50 A TJ = 125°C td(off) Eoff 1500 ns 1200 t 900 600 300 10 tr 120 4 60 5 2 0 81T120 0 81T120 0 10 20 30 40 50 60 70 80 90 100 Ω RG 0 tf 0 10 20 30 40 50 60 70 80 90 100 Ω RG 0 Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 1 K/W 0,1 ZthJC diode 120 A 100 ICM 80 60 40 20 0 0 200 400 600 VCE 81T120 RG = 2 2 Ω TJ = 125°C VCEK < VCES 0,01 0,001 0,0001 IGBT single pulse VID...75-12P1 800 1000 1200 V 0,00001 0,00001 0,0001 0,001 0,01 t 0,1 s 1 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 303 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 4-4