Advanced Technical Information
VUB 116 / 145
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode for Braking System
10+11 12 13 19+20
VRRM = 1600 V IdAVM = 116/145 A
VRRM
V 1600 1600
Type
1 6+7 4+5 2+3
VUB 116-16 NO1 VUB 145-16 NO1
8+9
18 17 21+22
Symbol VRRM IdAVM IFSM I2t Ptot VCES VGE
IGBT
Conditions
Maximum Ratings
VUB 116 VUB 145
Features V A A A A A W V V A A A W V A A A A W °C °C °C V~ V~ Nm lb.in. mm mm m/s2 g Dimensions in mm (1 mm = 0.0394") • Soldering connections for PCB mounting • Convenient package outline • Thermistor Applications • Drive Inverters with brake system Advantages • 2 functions in one package • Easy to mount with two screws • Suitable for wave soldering • High temperature and power cycling capability
1600
Rectifier Diodes
1600
TC = 100°C, sinusoidal 120° TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0 V TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0 V TC = 25°C per diode TVJ = 25°C to 150°C Continuous TC = 25°C, DC TC = 80°C, DC tp = Pulse width limited by TVJM TC = 25°C
116 650 570 2110 1620 190 1200 ± 20 95 67 100 380 1200 27 38 tbd 200 130 -40...+150 150 -40...+125
145 900 780 4050 3040 250 1200 ± 20 141 100 150 570
IC25 IC80 ICM Ptot VRRM IFAV IFRMS IFRM IFSM Ptot TVJ TVJM Tstg VISOL Md dS dA a Weight
Fast Recovery Diode
TC = 80°C, rectangular d = 0.5 TC = 80°C, rectangular d = 0.5 TC = 80°C, tP = 10 µs, f = 5 kHz TVJ = 45°C, t = 10 ms TC = 25°C
Module
50/60 Hz, t = 1 min IISOL ≤ 1 mA, t = 1 s Mounting torque Creep distance on surface Strike distance in air Maximum allowable acceleration typ.
2500 3000 2.25...2.75 20...25 12.7 9.6 50 180
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
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240
Data according to IEC 60747
Advanced Technical Information
VUB 116 / 145
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.1 2 VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145 1.43 1.68 0.85 0.85 7.1 5.9 mA mA V V V V mΩ mΩ
IR VF VT0 rT RthJC RthCH VBR(CES) VGE(th) ICES VCEsat tSC (SCSOA) RBSOA
IGBT
Rectifier Rectifier Diodes Diodes
VR = VRRM, TVJ = 25°C VR = VRRM, TVJ = 150°C IF = 80 A, TVJ = 25°C IF = 150 A, TVJ = 25°C for power-loss calculations only TVJ = 150°C per diode
0.65 K/W 0.5 K/W 0.1 K/W 0.1 K/W 1200 4.5 4.5 6.45 6.45 0.1 0.5 V V V mA mA V V µs
VGS = 0 V, IC = 0.1 mA IC = 8 mA IC = 3 mA TVJ = 25°C, VCE = 1200 V TVJ = 125°C, VCE = 0,8 • VCES VGE = 15 V, IC = 100 A VGE = 15 V, IC = 150 A
VUB 116 VUB 145
VUB 116 VUB 145
3.5 3.7 10
VGE = 15 V, VCE = 720 V, TVJ = 125°C, VGE = 15 V, VCE = 1200 V, TVJ = 125°C, clamped inductive load, L = 100 µH RG = 22 Ω VUB 116 RG = 15 Ω VUB 145 VCE = 25 V, f = 1 MHz, VGE = 0 V VUB 116 VUB 145 VCE = 720 V, IC = 50/75 A VGE = 15 V, RG = 32/15 Ω Inductive load; L = 100 µH TVJ = 125°C 3.8 5.7 150 680 6 9 5 7.5
100 150
A A nF nF ns ns mJ mJ mJ mJ
Cies td(on) td(off) Eon Eoff RthJC RthJH IR VF VT0 rT IRM trr RthJC RthCH R25 B25/50
NTC Fast Recovery Diode
VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145
0.33 K/W 0.22 K/W 0.66 K/W 0.44 K/W 0.25 1 2.76 1.3 16 5.5 40 11 mA mA V V mΩ A ns 0.9 K/W 0.1 K/W
240
VR = VRRM, TVJ = 25°C VR = 1200 V, TVJ = 125°C IF = 30 A, TVJ = 25°C
For power-loss calculations only TVJ = 150°C IF = 50 A, -diF/dt = 100 A/µs, VR = 100 V IF = 1 A, -diF/dt = 200 A/µs, VR = 30 V
4.75
5.0 5.25 3375
kΩ K
© 2002 IXYS All rights reserved
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