VUB160-12NO1

VUB 120 / 160 Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM = 1200/1600 V IdAVM = 121/157 A Preliminary Data VRRM V Type VRRM V Type 1200 VUB 120-12 NO1 1600 VUB 120-16 NO1 1200 VUB 160-12 NO1 1600 VUB 160-16 NO1 Symbol VRRM IdAVM IFSM I2t Ptot VCES VGE IGBT Test Conditions TC = 75°C, sinusoidal 120° TVJ = 45°C, TVJ = 150°C, TVJ = 45°C, TVJ = 150°C, TC = 25°C per diode TVJ = 25°C to 150°C Continuous TC = 25°C, DC TC = 75°C, DC TC = 75°C, d = 0.5 tp = Pulse width limited by TVJM TC = 25°C Fast Recovery Diode Maximum Ratings VUB 120 VUB160 1200/1600 1200/1600 V Rectifier Diodes 121 650 580 2110 1680 130 1200 ± 20 100 71 56 200 400 1200 25 39 tbd 200 180 100 -40...+150 150 -40...+125 157 850 760 3610 2880 160 1200 ± 20 150 106 85 300 600 A A A A A W V V A A A A W V A A A A A W °C °C °C V~ V~ t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0V Features Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast diode Convenient package outline UL registered E 72873 Case and potting UL94 V-0 Thermistor q q q q q q q Applications q Drive Inverters with brake system IC25 IC75 ICM Ptot VRRM IFAV IFRMS IFRM IFSM Ptot TVJ TVJM Tstg VISOL Advantages 2 functions in one package Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability q q q q TC = 75°C, rectangular d = 0.5 TC = 75°C, rectangular d = 0.5 TC = 75°C, tP = 10 µs, f = 5 kHz TVJ = 45°C, TVJ = 150°C, TC = 25°C t = 10 ms t = 10 ms Dimensions in mm (1 mm = 0.0394") Md dS dA a Weight Module 50/60 Hz IISOL £ 1 mA Mounting torque t = 1 min t=1s (M5) (10-32 unf) 3000 3600 2-2.5 18-22 12.7 9.4 50 80 Nm lb.in. mm mm m/s2 g 0 31 Creep distance on surface Strike distance in air Maximum allowable acceleration typ. Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-4 VUB 120 / 160 Symbol Test Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.3 5 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 IR Rectifier Diodes Rectifier Diodes VR = VRRM, VR = VRRM, IF = 150 A, TVJ = 25°C TVJ = 150°C TVJ = 25°C mA mA V V V V mW mW VF VT0 rT RthJC RthJH VBR(CES) VGE(th) ICES 1.59 1.49 0.80 0.75 6.1 4.6 For power-loss calculations only TVJ = 150°C per diode 1.0 K/W 0.8 K/W 1.3 K/W 1.1 K/W 1200 5 5 8 8 0.8 1.2 3 4.5 2.9 2.9 10 10 V V V mA mA mA mA V V ms ms VGS = 0 V, IC = 3 mA IC = 20 mA IC = 30 mA TVJ = 25°C, VCE = 1200 V VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 TVJ = 125°C, VCE = 0,8 ž VCES VCEsat tSC (SCSOA) VGE = 15 V, IC = 50 A VGE = 15 V, IC = 75 A VGE = 15 V, VCE = 720 V, TVJ = 125°C, RG = 11 W, non repetitive VUB 120 RG = 7 W, non repetitive VUB 160 VGE = 15 V, VCE = 960 V, TVJ = 125°C, Clamped Inductive load, L = 100 mH VUB 120 RG = 11 W RG = 7 W VUB 160 VCE = 25 V, f = 1 MHz, VGE = 0 V VUB 120 VUB 160 RBSOA IGBT 100 150 9 13.5 300 350 12 18 16 24 A A nF nF ns ns mJ mJ mJ mJ Cies td(on) td(off) Eon Eoff RthJC RthJH IR Fast Recovery Diode VCE = 720 V, IC = 50/75 A VGE = 15 V, RG = 11/7 W Inductive load; L = 100 mH TVJ = 125°C VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 0.32 K/W 0.21 K/W 0.45 K/W 0.30 K/W 4 0.75 7 2.55 1.65 18.2 16 40 18 60 mA mA V V mW A ns VR VR IF = VRRM, TVJ = 25°C = 0,8 • VCES, TVJ = 125°C = 30 A, TVJ = 25°C VF VT0 rT IRM trr RthJC RthJH For power-loss calculations only TVJ = 150°C IF IF = 30 A, -diF/dt = 240 A/ms, VR = 540 V = 1 A, -diF/dt = 100 A/ms, VR = 30 V 1.2 K/W 1.6 K/W NTC R25 Siemens S 891/2,2/+9 2.2 kW © 2000 IXYS All rights reserved 2-4 VUB 120 300 W 250 Ptot 200 150 100 50 0 0 20 40 60 Id(AV)M 80 100 120 A 0 40 TA 80 120 °C 160 RthKA [K/W] 0.1 0.3 0.5 0.7 1 1.5 3 100 Id(AV)M 80 60 40 20 0 0 40 80 140 A 120 TC 120 °C 160 Fig. 1 Power dissipation versus direct output current and ambient temperature (Rectifier bridge) Fig. 2 Maximum forward current versus case temperature (Rectifier bridge) T =125°C Eoff VJ tfi RG = 4.7 200 TVJ = 25°C A VGE = 15V 150 IC 100 VGE = 13V VGE = 11V 1.50 VCE(sat) IC = 100A 1.25 W Eoff norm. IC = 50A 1.00 norm. under evaluation tfi IC = 25A 50 VGE = 9V 0.75 0 0 2 4 VCE 6 V8 VGE = 15V 0.50 -50 -25 0 25 50 75 100 125 °C 150 TVJ A IC Fig. 3 Output characteristics for braking (IGBT) Fig. 4 Temperature dependence of output saturation voltage, normalized (IGBT) Fig. 5 Turn-off energy per pulse and fall time in collector current, normalized (IGBT) 1.3 T =125°C Eoff VJ IC = 25A tfi norm. to 4.7W 1.2 norm. Eoff under evaluation D=0.1 200 A IC 150 D=0.2 D=0.3 100 D=0.4 D=0.5 D=0.7 1.1 tfi 1.0 50 TK = 80°C 0 0.0001 VUB 120 0.9 RG 0.001 0.01 0.1 1 tp s 10 W Fig. 6 Collector current dependence on pulse width and duty cycle (IGBT) Fig.7 Turn-off energy per pulse and fall time on RG (IGBT) © 2000 IXYS All rights reserved 3-4 VUB 120 200 100 A IC 10 IF 30 TVJ=150°C TVJ=25°C 3 2 10 1 typ. 0 800 VCE 1200 V 0 1 2 VF 3 V 4 0 1 10 100 A/ms 1000 -diF/dt 50 A 40 Qr 4 IF = 30 A IF = 60 A IF = 30 A IF = 15 A 6 TVJ=100°C VR= 540 V max. mC 5 20 1 TVJ=125°C 0.1 0 RG= 11 W 400 Fig. 8 Reverse baised safe operation area (IGBT) Fig. 9 Forward current versus voltage drop (Fast Diode) Fig. 10 Recovery charge versus -diF/dt (Fast Diode) 50 A 40 70 V 60 VFR 50 40 30 tFR 20 10 0 0 100 200 VFR 1.4 ms 1.2 1.0 0.8 0.6 0.4 TVJ=125°C 0.2 IF = 30A tFR 0.0 300 400 A/ms 600 500 -diF/dt trr 1.0 ms 0.8 TVJ=100°C VR= 540 V max. IF = 30 A IF = 60 A IF = 30 A IF = 15 A IRM TVJ=100°C VR= 540 V max. IF = 30 A IF = 60 A IF = 30 A IF = 15 A 0.6 30 typ. 0.4 20 0.2 typ. 0.0 0 100 200 300 400 A/ms 600 500 -diF/dt 10 0 0 100 200 300 400 A/ms 600 500 -diF/dt Fig.11 Peak forward voltage and recovery time versus -diF/dt (Fast Diode) 1.4 1.2 1.0 Kf IRM Fig.12 Recovery time versus -diF/dt (Fast Diode) Fig.13 Peak reverse current versus -diF/dt (Fast Diode) 1.8 1.6 K/W ZthJK 1.4 1.2 1.0 0.8 QR 0.6 0.4 IGBT Fast Diode per Rectifier Diode 0.8 0.6 0.4 0.2 0.0 0 40 80 TVJ 0.2 120 °C 160 0.0 0.001 VUB 120 0.01 0.1 1 10 t s 100 Fig.14 Dynamic parameters versus junction temperature (Fast Diode) Fig.15 Transient thermal impedance junction to heatsink ZthJK © 2000 IXYS All rights reserved 4-4