VUE50

VUE 50 Three Phase Rectifier Bridge VRRM = 1200 V IdAV = 50 A trr = 40 ns 45 12 VRSM V 1200 VRRM V 1200 Type 10 8 6 1/2 VUE 50-12NO1 4/5 6 8 10 Symbol IdAV IFSM Test Conditions TK = 85°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 50 200 210 185 195 200 180 170 160 -40...+150 150 -40...+125 A A A A A A2s A2s A2s A2s °C °C °C V~ V~ Nm lb.in. g I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Leads suitable for PC board soldering Creeping and creepage-distance fulfils UL 508/CSA 22.2NO14 and VDE 0160 requirements Epoxy meet UL94V-O UL registered E72873 q q q q q q q TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32UNF) Applications Supplies for DC power equipment Input rectifiers for PWM inverter Output filter for PWM inverter q q q 3000 3600 2 - 2.5 18-22 35 Advantages Reduced EMI/RFI Easy to mount with two screws Space and weight savings Improved temperature and power cycling q q q q Symbol IR VF VT0 rT RthJS IRM trr dS dA a Test Conditions VR = VRRM VR = 0.8 VRRM IF = 30 A; TVJ = 25°C TVJ = 125°C TVJ = 25°C Characteristic Values typ. max 4 0.75 7 2.55 1.65 18.2 1.5 0.25 16 40 18 60 12.7 9.4 50 mA mA V V mW K/W K/W A ns mm mm m/s2 Dimensions in mm (1 mm = 0.0394") For power-loss calculations only per diode, per module, 120° rect. 120° rect. IF = 30 A, -diF/dt = 240 A/ms VR = 540 V, L £ 0.05 m H, TVJ = 100°C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V, TVJ = 25°C Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. Use output terminals in parallel connections © 2000 IXYS All rights reserved 1-2 VUE 50 70 A 60 50 IF 40 30 TVJ= 25°C TVJ=150°C 60 A 50 40 30 50 A 40 IRM TVJ=100°C VR= 540V max. IF=30A IF=60A IF=30A IF=15A IdAVM 30 20 20 20 10 0 0 1 VF 2 3 V 4 10 0 0 25 50 TS 75 100 °C 125 150 typ. 10 0 0 200 -diF/dt 400 A/ms 600 Fig. 1 Forward current versus voltage drop per diode. Fig. 2 Maximum forward current at heatsink temperature TS. 1.2 µs 1.0 trr 0.8 0.6 Fig. 3 Typical peak reverse current versus -diF/dt. 100 V 80 3000 ns 2400 VFR 60 1800 tfr 1.4 1.2 1.0 Kf 0.8 0.6 TVJ=100°C VR=540 V IRM max. IF=30A IF=60A IF=30A IF=15A VFR trr 0.4 0.2 0.0 0 40 TVJ 80 40 0.4 0.2 typ. 120 °C 160 0.0 0 200 -diF/dt 400 A/ms 600 0 0 200 - diF/dt 400 20 tfr TVJ=125°C IF=30A 1200 600 0 A/ms 600 Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Typical recovery time versus -diF/dt. 300 W 250 Fig. 6 Typical peak forward voltage and forward recovery time versus -diF/dt. 2.0 K/W 1.5 200 ZthJS 1.0 RthJSi 0.05 0.2 0.75 0.5 ti 0.04 0.07 0.13 0.2 150 100 50 0.0 0.001 0 10 0 10 20 IdAVM 30 40 50 A 0 25 50 TA RthSA (K/W) 0.2 0.5 1.0 1.5 2.0 4.0 6.0 0.5 0.01 t 0.1 1 s °C 75 100 125 150 Fig. 7 Transient thermal impedance junction to heatsink Fig. 8 Power dissipation versus direct output current and ambient temperature © 2000 IXYS All rights reserved 2-2