VUO120-12NO1

VUO 120 VUO 155 Three Phase Rectifier Bridge IdAVM = 121/157 A VRRM = 1200-1600 V VRRM Type V V VRRM Type A6 E6 K6 Therm. M1/O1 W5 option 1200 VUO 120-12 NO1 1600 VUO 120-16 NO1 1200 VUO 155-12 NO1 1600 VUO 155-16 NO1 W6 M10/O10 Symbol VRRM IdAVM IFSM I2t Ptot TVJ TVJM Tstg VISOL Md dS dA a Weight Symbol Test Conditions TC = 75°C, sinusoidal 120° TVJ = 45°C, TVJ = 150°C, TVJ = 45°C, TVJ = 150°C, TC = 25°C per diode t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0V Maximum Ratings VUO 120 1200/1600 VUO155 1200/1600 V Features ● 121 650 580 2110 1680 150 -40...+150 150 -40...+125 157 850 760 3610 2880 190 A ● A A A A W °C °C °C V~ V~ ● ● ● Soldering connections for PCB mounting Isolation voltage 3600 V~ Convenient package outline UL registered E 72873 Case and potting UL94 V-0 Applications ● Input Rectifier for Drive Inverters 50/60 Hz IISOL ≤ 1 mA Mounting torque t = 1 min t=1s (M5) (10-32 unf) 3000 3600 2-2.5 18-22 12.7 9.4 50 80 Advantages ● ● ● Nm lb.in. mm mm m/s2 g Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability Creep distance on surface Strike distance in air Maximum allowable acceleration typ. Test Conditions Dimensions in mm (1 mm = 0.0394") Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.3 5 VUO 120 VUO 155 VUO 120 VUO 155 VUO 120 VUO 155 VUO 120 VUO 155 VUO 120 VUO 155 IR VF VF0 rT RthJC RthJH R25 (option) VR = VRRM, VR = VRRM, IF = 150 A, TVJ = 25°C TVJ = 150°C TVJ = 25°C mA mA V V V V mΩ mΩ 1.59 1.49 0.80 0.75 6.1 4.6 For power-loss calculations only TVJ = 150°C per diode 1.0 K/W 0.8 K/W 1.3 K/W 1.1 K/W 2.2 kΩ 211 Siemens S 891/2,2/+9 IXYS reserves the right to change limits, test conditions and dimensions © 2002 IXYS All rights reserved 1-3 VUO 120 150 A 120 IF 90 TVJ = 150°C TVJ = 25°C 700 A 600 IFSM 500 400 300 50 Hz, 80% VRRM 104 As I2t TVJ = 45°C 2 VR = 0 V 60 TVJ = 45°C 200 30 100 0 0.0 0 0.001 TVJ = 150°C TVJ = 150°C 103 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms 10 89 t 0.5 1.0 VF 1.5 V 2.0 Fig. 1 Forward current versus voltage drop per diode 150 Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 140 A 120 100 Id(AV)M 80 60 RthKA: W Ptot 100 0.7 1 1.4 2 3 5 KW KW KW KW KW KW 50 40 20 0 0 20 40 60 80 100 120 A 0 Id(AV)M 20 40 60 80 100 120 140 °C Tamb 0 0 20 40 60 80 100 120 140 °C TC Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120° 1.2 Fig. 5 Max. forward current versus case temperature K/W 1.0 0.8 0.6 Constants for ZthJC calculation: i 1 2 3 4 VUO 120 0.4 Rthi (K/W) 0.003521 0.1479 0.5599 0.2887 ti (s) 0.01 0.05 0.14 0.5 0.2 0.0 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case © 2002 IXYS All rights reserved 2-3 VUO 155 150 A 120 IF 90 TVJ = 150°C TVJ = 25°C 60 700 50 Hz, 80% VRRM A 600 IFSM 500 400 300 TVJ = 45°C 104 A2s I2t VR = 0 V TVJ = 45°C TVJ = 150°C 200 30 100 0 0.0 0 0.001 TVJ = 150°C 103 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t 0.5 1.0 VF 1.5 V 2.0 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 180 A 160 140 Id(AV)M 120 100 80 60 W 150 RthKA: 0.7 1 1.4 2 3 5 KW KW KW KW KW KW Ptot 100 50 40 20 0 0 20 40 60 80 100 120 140 A 0 Id(AV)M 20 40 60 80 100 120 140 °C Tamb 0 0 20 40 60 80 100 120 140 °C TC Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120° 1.0 Fig. 5 Max. forward current versus case temperature K/W 0.8 0.6 Constants for ZthJC calculation: 0.4 i 1 2 3 4 VUO 155 Rthi (K/W) 0.002817 0.1183 0.4479 0.231 ti (s) 0.01 0.05 0.14 0.5 0.2 0.0 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case © 2002 IXYS All rights reserved 3-3