VUO70

VUO 70 Three Phase Rectifier Bridge IdAV = 70 A VRRM = 800-1600 V VRSM V 900 1300 1500 1700 VRRM V 800 1200 1400 1600 Types A E D C B VUO VUO VUO VUO 70-08NO7 70-12NO7 70-14NO7 70-16NO7 Symbol IdAV ① IFSM Conditions TC = 100°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 70 550 600 500 550 1520 1520 1250 1250 -40...+150 150 -40...+125 A A A A A A2 s A2 s A2 s A2 s °C °C °C V~ V~ Nm lb.in. g Features • • • • • Package with copper base plate Isolation voltage 3000 V~ Planar passivated chips Low forward voltage drop ¼" fast-on power terminals Applications • • • • Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJH dS dA a 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • Small and light weight 2500 3000 5 ± 15 % 44 ± 15 % 110 Mounting torque (M5) (10-32 UNF) typ. Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C Characteristic Values ≤ ≤ ≤ 0.5 10 1.7 0.8 8 1.45 0.242 1.9 0.317 16.1 7.5 50 mA mA V V mΩ K/W K/W K/W K/W mm mm m/s2 Dimensions in mm (1 mm = 0.0394") For power-loss calculations only per per per per diode; DC current module diode, DC current module Creeping distance on surface Creepage distance in air Max. allowable acceleration © 2003 IXYS All rights reserved 1-2 316 Data according to IEC 60747 refer to a single diode unless otherwise stated ① for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. VUO 70 30 A I F(OV) -----I FSM IFSM (A) TVJ=45°C TVJ=150°C 500 550 4 10 2 As 25 20 15 10 5 IF T=150°C 1.6 1.4 3 TVJ=45°C 1.2 10 TVJ=150°C 1 0 V RRM 0.8 1/2 V RRM T=25°C VF 0.6 1 V RRM 0 10 2 1 1 V 2 1.5 0.4 10 0 10 1 t[ms] 10 2 10 3 4 t [ms] 6 10 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 i2dt versus time (1-10ms) per diode or thyristor 100 200 [W] PSD 41 0.38 0.26 0.51 = RTHCA [K/W] TC 105 110 80 DC [A] sin.180° rec.120° rec.60° rec.30° 175 150 60 115 125 0.76 120 40 100 1.26 125 130 75 50 25 PVTOT 0 DC sin.180° rec.120° rec.60° rec.30° 20 135 2.76 140 145 IdAV 0 °C 150 50 100 TC(°C) 150 200 20 IFAVM 40 60 0 [A] 50 Tamb 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature K/W 3 2 Z thJK Z thJC 1 Zth 0.01 Fig. 6 0.1 t[s] 1 10 316 Transient thermal impedance per diode or Thyristor, calculated 2-2 © 2003 IXYS All rights reserved