VVZ175-14IO7

VVZ 110 VVZ 175 Three Phase Half Controlled Rectifier Bridge, B6HK IdAVM = 110/167 A VRRM = 1200-1600 V E ~ VRSM VDSM V 1300 1500 1700 VRRM VDRM V 1200 1400 1600 Type E D C A 2 3 1 C ~ D ~ VVZ 110-12io7 VVZ 110-14io7 VVZ 175-12io7 VVZ 175-14io7 VVZ 175-16io7 B 32 Symbol IdAV IFRMS, ITRMS IFSM, ITSM Test Conditions TC = 85°C; module per leg TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings VVZ 110 VVZ 175 110 58 1150 1230 1000 1070 6600 6280 5000 4750 150 167 89 1500 1600 1350 1450 11200 10750 9100 8830 A A A A A A A2s A2s A2s A2s A/ms A/ms V/ms V W W W W °C °C °C V~ V~ Nm Nm g Features q q q q 1 A + B - Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips UL registered E72873 Applications q q TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, diG/dt = 0.3 A/ms, IT = 1/3 • IdAV TVJ = TVJM; VDR = 2/3 VDRM RGK = ¥; method 1 (linear voltage rise) tp = 30 ms tp = 500 ms tp = 10 ms £ £ £ q Input rectifier for PWM converter Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging 500 1000 10 Advantages q q q (dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight Easy to mount with two screws Space and weight savings Improved temperature and power cycling TVJ = TVJM IT = ITAVM 10 5 1 0.5 -40...+125 125 -40...+125 50/60 Hz, RMS t = 1 min t=1s IISOL £ 1 mA Mounting torque (M6) Terminal connection torque (M6) typ. 2500 3000 5±15 % 5±15 % 300 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 VVZ 110 VVZ 175 Symbol IR, ID VF, VT VT0 rT VGT IGT VGD IGD IL IH tgd RthJC RthJH dS dA a Test Conditions VR = VRRM; VD = VDRM IF, IT = 200 A, TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM VD = 2/3 VDRM TVJ = 25°C £ £ £ £ £ £ £ £ £ 0.65 0.108 0.8 0.133 10 9.4 50 TVJ = TVJM TVJ = 25°C £ £ £ 1.75 0.85 6 1.5 1.6 100 200 0.2 5 450 200 2 0.46 0.077 0.55 0.092 Characteristic Values VVZ 110 VVZ 175 5 0.3 1.57 0.85 3.5 mA mA V V mW V V mA mA V mA mA mA ms K/W K/W K/W K/W mm mm m/s2 2 3 5 1 4 6 10 V VG 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 1 4: PGAV = 0.5 W IGD, TVJ = 125°C 5: PGM = 5 W 6: PGM = 10 W 0.1 1 10 100 1000 IG mA IG = 0.3 A; tG = 30 ms diG/dt = 0.3 A/ms TVJ = 25°C; VD = 6 V; RGK = ¥ TVJ = 25°C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration Fig. 1 Gate trigger characteristics 120 A IdAV 100 VVZ 110 80 60 40 20 0 0 50 100 TC °C 150 Fig. 2 Dimensions in mm (1 mm = 0.0394") M6x10 DC output current at case temperature VVZ 110 900 A 800 IFSM 700 0.7 VVZ 110 50 Hz 80% VRRM K/W 0.6 ZthJC 0.5 0.4 7 TVJ = 45°C 600 3 30 500 94 80 72 26 26 0.3 400 TVJ = 125°C 300 6.5 0.2 0.1 0.0 10-3 15 54 27 6.5 C~ A+ 3 2 1 D~ B- E~ 200 100 10-3 4 5 6 10-2 10-1 12 100 t s 101 10-2 10-1 100 t s 101 25 66 Fig. 3 Surge overload current IFSM: Crest value, t: duration Fig. 4 Transient thermal impedance junction to case (per leg) © 2000 IXYS All rights reserved 2-2