VVZ70-12IO7

VVZ 70 VTO 70 VVZF 70 VTOF 70 Three Phase Rectifier Bridge Preliminary data C D E B VVZ 70 VVZF 70 1 A C D E 2 3 1 IdAV = 70 A VRRM = 800-1600 V 2 3 1 A C D E 2 3 1 A VRSM VDSM V 800 1200 1400 1600 VRRM VDRM V 800 1200 1400 1600 Type B xxx xxx xxx xxx 70-08io7 70-12io7 70-14io7 70-16io7 2 C D E 3 A xxx = type 5 4 6 B 5 4 6 B VTO 70 VTOF 70 Symbol IdAV ¬ IdAVM ¬ IFRMS, ITRMS IFSM, ITSM Test Conditions TK = 85°C, module module per leg TVJ = 45°C; VR = 0 V TVJ = TVJM VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 70 70 36 550 600 500 550 1520 1520 1250 1250 150 500 1000 10 A A A A A A A A2s A2s A2s A2s A/µs A/µs V/µs V W W W W °C °C °C V~ V~ Nm lb.in. g Features Package with copper base plate Isolation voltage 3000 V~ Planar passivated chips Low forward voltage drop ¼" fast-on power terminals Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Small and light weight I2t TVJ = 45°C VR = 0 V TVJ = TVJM VR = 0 V F2 (di/dt)cr TVJ = 125°C repetitive, IT = 50 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.3 A, non repetitive, I T = 1/2 • IdAV diG/dt = 0.3 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tp = 30 µs tp = 500 µs tp = 10 ms ≤ ≤ ≤ (dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight Dimensions in mm (1 mm = 0.0394") 10 5 1 0.5 -40...+125 125 -40...+125 50/60 Hz, RMS IISOL ≤ 1 mA Mounting torque t = 1 min t=1s (M5) (10-32 UNF) 2500 3000 5 ± 15 % 44 ± 15 % 50 Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated ¬ for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. © 1999 IXYS All rights reserved F2 - 51 VVZ 70 VTO 70 Symbol ID, IR VT VT0 rT VGT IGT VGD IGD IL IH tgd tq RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 80 A; TVJ = 25°C Characteristic Values ≤ ≤ 5 1.64 0.85 11 ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ 1.5 1.6 100 200 0.2 5 450 200 2 250 0.9 0.15 1.1 0.157 16.1 7.5 50 mA V V mΩ V V mA mA V mA mA mA µs µs K/W K/W K/W K/W mm mm m/s 2 VVZF 70 VTOF 70 For power-loss calculations only VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJ = TVJ = TVJ = 25°C -40°C 25°C -40°C VD = 2/3 VDRM TVJ = 25°C; tP = 10 µs IG = 0.45 A; diG/dt = 0.45 A/µs TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/µs TVJ = TVJM; IT = 20 A, tP = 200 µs; di/dt = -10 A/µs typ. VR = 100 V; dv/dt = 15 V/µs; VD = 2/3 VDRM per thyristor / Diode; DC per module per thyristor / Diode; DC per module Creeping distance on surface Creepage distance in air Max. allowable acceleration F2 © 1999 IXYS All rights reserved F2 - 52