VVZB120-16IOX

VVZB120-16ioX 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 180 A I C25 I FSM = 700 A VCE(sat) = = 180 A 1.7 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part number VVZB120-16ioX Backside: isolated O1 S1 E1 I1 M1 W1 L7 G7 C7 O10 W10 Features / Advantages: Applications: Package: V2-Pack ● Package with DCB ceramic base plate ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● X2PT - 2nd generation Xtreme light Punch Through ● Rugged X2PT design results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic ● Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance ● 3~ Rectifier with brake unit for drive inverters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g VVZB120-16ioX Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25°C 50 µA TVJ = 150°C 20 mA IT = TVJ = 25°C 1.27 V 1.90 V 1.25 V IT = 60 A TVJ = 125 °C 60 A I T = 180 A bridge output current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TC = 85 °C rectangular RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing 2.04 V T VJ = 150 °C 180 A TVJ = 150 °C 0.83 V 6.9 mΩ d=⅓ for power loss calculation only Ptot V VR/D = 1600 V I T = 180 A I DAV max. Unit 1700 V 0.5 K/W 0.1 K/W TC = 25°C 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 700 A t = 8,3 ms; (60 Hz), sine VR = 0 V 755 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 595 A t = 8,3 ms; (60 Hz), sine VR = 0 V 645 A t = 10 ms; (50 Hz), sine TVJ = 45°C 2.45 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 2.37 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.77 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 1.73 kA²s 54 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 180 A t P = 200 µs; di G /dt = 0.45 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 95 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 450 mA I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 60 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 60A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g VVZB120-16ioX Ratings Brake IGBT + Diode Symbol VCES Definition Conditions min. VGES max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TC = 25°C 180 A TC = 80 °C 140 A 500 W 2.1 V TVJ = collector emitter voltage I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 4 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C =100 A t d(on) turn-on delay time TC = 25°C I C = 100 A; V GE = 15 V TVJ = 25°C 1.7 TVJ = 125°C 1.9 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25°C inductive load 6.8 TVJ = 125°C VGE = ±15 V; R G = 6.8 Ω SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1200 V VCE = 720 V; VGE = ±15 I SC short circuit current RG = 6.8 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 7.5 V 0.1 mA 0.1 mA nA 340 nC 230 ns 70 ns 380 ns 230 ns 12.5 mJ 11.5 mJ TVJ = 125°C VCEK = 1200 V I CM V 500 VCE = 600 V; IC = 100 A VGE = ±15 V; R G = 6.8 Ω 6 max. Unit 1200 V TVJ = 125°C 300 A 10 µs A 450 0.25 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 48 A TC = 80 °C 32 A TVJ = 25°C 2.75 V TVJ = 25°C 0.25 mA TVJ = 125°C 1 mA I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 1000 A/µs trr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 600 V 30 A; VGE = 0 V TVJ = 125°C 1.60 V 5.2 µC 50 A 300 ns 1.9 mJ 0.9 K/W 0.3 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20191220g VVZB120-16ioX Package Ratings V2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 °C -40 125 °C 125 °C 76 Weight MD 2 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 2.5 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) yywwAA Part Number Lot.No: xxxxxx UL Date code Prod. Index Ordering Standard Ordering Number VVZB120-16ioX Equivalent Circuits for Simulation I V0 R0 Marking on Product VVZB120-16ioX * on die level Thyristor Brake Diode V 0 max threshold voltage 0.83 1.31 R0 max slope resistance * 3.7 8 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Delivery Mode Box Quantity 6 Code No. 511152 T VJ = 150°C V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g VVZB120-16ioX Outlines V2-Pack Remarks: EJOT PT® self-tapping screws of the dimension K25 are recommended for the mechanical connection between module and PCB. Choose the right length according to your board thickness at a maximum depth of 6 mm of the module holes. The recommended mounting torque is 1.5 Nm. Detail X Detail Y M 2:1 Ø1.5 (DIN 46 431) Ø 6.1 Ø 2.5 1.5 +0.6-0.3 6.0 (4) 1.5 0.5±0.2 4.5±0.5 Ø 2.1 Y 65 93 38 40.4 78.5 ±0.3 24.2 ±0.3 28.8 16.6 ±0.3 16.8 ±0.3 11.7±0.3 9.8 ±0.3 7.1±0.3 2.4 ±0.3 0.8 ±0.3 4x45° 2 0.25 13 17 ±0.25 X M 5:1 ±0.3 1 2 3 5.5 23.8 32 ±0.2 R 15.4 ±0.3 15.4 ±0.3 5.5 ±0.3 5.5 1 2 3 A B C D E F G H I K L M N O P R S T U V W R1 4 5 6 7 8 9 10 R A B C D E F G H I K L M N O P R S T U V W 4 5 6 7 8 9 10 40 ±0.15 0.5 80 ±0.3 Marking O1 S1 E1 I1 M1 W1 L7 G7 C7 O10 W10 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g VVZB120-16ioX Thyristor 200 600 3000 TVJ = 125°C TVJ = 25°C 2500 150 500 TVJ = 45°C IF 2000 100 It 400 [A] TVJ= 45°C 2 IFSM 1500 TVJ = 150°C [A] 2 [A s] 1000 50 TVJ= 150°C 300 500 0 0.0 0.5 1.0 1.5 50Hz, 80% VRRM 200 0.001 0.01 2.0 VF [V] 1 2 1 t [s] Fig. 1 Forward current vs. voltage drop per thyristor 10 0 0.1 4 5 6 7 89 t [ms] 2 Fig. 2 Surge overload current vs. time per thyristor 1000 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 3 Fig. 3 I t vs. time per thyristor 160 TVJ = 25°C DC = 1 0.5 0.4 0.33 0.17 0.08 140 typ. 120 Limit 100 6 VG 1 [V] 100 IT(AV)M tgd 5 80 [μs] 4 2 3 [A] 10 1 60 40 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, T4 = 125°C 0.1 100 101 102 103 20 1 10 104 0 100 1000 0 50 Fig. 4 Gate trigger characteristics 0.6 DC = 1 0.5 0.4 100 0.33 0.17 80 0.08 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 0.5 0.4 ZthJC Ptot Constants for ZthJC calc.: 0.3 60 i Rth (K/W) ti (s) 1 2 3 4 5 0.040 0.003 0.140 0.120 0.197 0.004 0.010 0.030 0.300 0.080 [K/W] [W] 40 0.2 20 0.1 0 0.0 20 150 Fig. 5 Max. forward current vs. case temperature per thyristor Fig. 5 Gate trigger delay time 120 0 100 TC [°C] IG [mA] IG [mA] 40 60 80 IT(AV)M [A] 0 50 100 Tamb [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per thyristor IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per thyristor Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g VVZB120-16ioX Brake IGBT + Diode 200 200 150 13 V VCE = 20 V 150 150 25°C IC 200 VGE = 19 V 17 V 15 V IC 125°C 100 11 V TVJ = 150°C IC 100 100 [A] [A] [A] 125°C 50 50 50 25°C 9V 0 0.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VCE [V] 400 RG = 6.8 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C 30 3 6 4 7 RG = 6.8 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C 40 300 td(on) Eon tr 20 200 [mJ] [ns] 10 11 12 13 Eoff 60 500 50 400 t t d(off) 30 40 300 [mJ] [ns] tf 20 200 IF 30 [A] 125°C 20 tr 10 9 Fig. 3 Typ. transfer charact. IGBT Fig.2 Typ. output characteristics IGBT 50 8 VGE [V] VCE [V] Fig.1 Output characteristics IGBT 40 2 100 10 100 10 25°C Eon 0 0 0 50 100 150 0 200 0 IC [A] Fig. 4 Typ. turn-on energy & switch. times vs. collector current 8 80 RG = 6.8 Ohm VR = 600 V TVJ = 125°C I rr 6 Eoff Erec Irr 4 40 [A] [mJ] 100 150 200 IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current 2.5 2.0 60 Erec 0 10 20 30 40 50 0 60 1.5 2.0 2.5 1 100 Erec IGBT 1.5 75 [mJ] ZthJC Irr 1.0 50 0.1 [K/W] [A] 20 Erec 1.0 Diode 0.5 0 0.5 VF [V] Fig. 6 Typ. forward characteristics Diode 125 TVJ = 125°C VR = 600 V IF = 30 A Irr 2 0 0.0 0 50 25 0.0 4 8 12 16 20 0 24 0.01 0.001 IGBT Ri ti 0.050 0.0010 0.035 0.0100 0.120 0.0300 0.045 0.0800 0.01 Diode Ri ti 0.365 0.0050 0.180 0.0003 0.255 0.0397 0.100 0.1000 0.1 1 IF [A] RG [Ohm] t [s] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode Fig. 9 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220g