VVZB135-16IOXT

VVZB135-16ioXT 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 150 A I C25 I FSM = 700 A VCE(sat) = = 120 A 1.8 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC Part number VVZB135-16ioXT Backside: isolated 24/25 34 36 38 30 29 45/46 NTC 3 6/7 10/11 14/15 21/22 41 40 48/49 Features / Advantages: Applications: Package: E2-Pack ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● NTC ● 3~ Rectifier with brake unit for drive inverters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220f VVZB135-16ioXT Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25°C 100 µA TVJ = 150°C 20 mA IT = TVJ = 25°C 1.32 V 1.92 V 1.26 V IT = 50 A TVJ = 125 °C 50 A I T = 150 A TC = 85 °C bridge output current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case rectangular RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing 1.96 V T VJ = 150 °C 150 A TVJ = 150 °C 0.88 V 7.3 mΩ d=⅓ for power loss calculation only Ptot V VR/D = 1600 V I T = 150 A I DAV max. Unit 1700 V 0.65 K/W 0.1 K/W TC = 25°C 190 W t = 10 ms; (50 Hz), sine TVJ = 45°C 700 A t = 8,3 ms; (60 Hz), sine VR = 0 V 755 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 595 A t = 8,3 ms; (60 Hz), sine VR = 0 V 645 A t = 10 ms; (50 Hz), sine TVJ = 45°C 2.45 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 2.37 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 1.77 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 1.73 kA²s 32 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 150 A t P = 200 µs; di G /dt = 0.45 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.4 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 80 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 °C 450 mA I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 50 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 100 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 50A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191220f VVZB135-16ioXT Ratings Brake IGBT Symbol VCES Definition Conditions min. VGES max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TC = 25°C 120 A TC = 80 °C 84 A 390 W 2.1 V TVJ = collector emitter voltage I C80 TC = 25°C Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 3 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 75 A t d(on) turn-on delay time IC = 75 A; V GE = 15 V TVJ = 25°C 1.8 TVJ = 125°C 2.1 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25°C 6.0 6.5 V 0.2 mA 0.6 mA TVJ = 125°C 75 A VGE = ±15 V; R G = 10 Ω VGE = ±15 V; R G = 10 Ω SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1200 V VCE = 900 V; VGE = ±15 I SC short circuit current RG = 10 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 230 nC 70 ns 40 ns 250 ns 100 ns 6.8 mJ 8.3 mJ TVJ = 125°C VCEK = 1200 V I CM V 500 inductive load VCE = 600 V; IC = 5.5 max. Unit 1200 V TVJ = 125°C 225 A 10 µs A 300 0.32 K/W K/W 0.15 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 48 A TC = 80 °C 32 A TVJ = 25°C 2.75 V TVJ = 25°C 0.25 mA TVJ = 125°C 1 mA I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = trr reverse recovery time IF = R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 600 V 400 A/µs 30 A; VGE = 0 V TVJ = 125°C 1.99 V 1.8 µC 23 A 150 ns 0.9 K/W 0.3 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20191220f VVZB135-16ioXT Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 50 Unit A -40 150 °C -40 125 °C 125 °C 176 Weight MD 3 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 6 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA 2D Barcode XXXXXXXXXX yywwZ Logo UL Part Number Date Code Location Ordering Standard Ordering Number VVZB135-16IOXT Marking on Product VVZB135-16IOXT Delivery Mode Box Quantity 6 Code No. 510134 105 Temperature Sensor NTC Symbol Definition Conditions R25 resistance TVJ = 25° B25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 kΩ R K [ ] 104 103 Equivalent Circuits for Simulation I V0 R0 * on die level Thyristor Brake IGBT Brake Diode V 0 max threshold voltage 0.88 1.1 1.31 R0 max slope resistance * 4.1 17.9 8 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved T VJ = 150°C 102 0 V mΩ 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20191220f VVZB135-16ioXT Outlines E2-Pack D A 17 ±0,5 20,6 ±0,5 3,5 ±0,5 Ø6 Vor der Montage typ. 100 µm konvex über 75 mm Before mounting typ. 100 µm convex over 75 mm Ø 2,5 -0,3 Ø 2,1 -0,3 1,5 +0,3 Detail C Detail D 0,8 ±0,2 15° ±1° 6 Detail A 0,8 ±0,05 1,2 ±0,05 93 ±0,2 65,55 69,36 24 47 23 15.24 11.43 11,43 0 48 22 49 21 50 4 5 6 7 8 9 7.62 7,62 11,43 11.43 20 10 11 12 13 14 15 16 17 18 19 46,50 50.31 3 31,26 35,07 0 2 19,83 1 61,74 65,55 Index 41,90 50,31 42,69 46 32 ±0,2 Ø 5,5 +0,1 - 0,3 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 45 11 45 ±0,2 35,07 23,64 27,45 79,2 C 107,5 ±0,3 Bemerkung / Note: - Nichttolerierte Maße nach / Measure without tolerances according DIN ISO 2768-T1-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: - Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024 0.1 Detail A: PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT® (Größe / size: K25) - Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / Recommended mounting torque: 1.5 Nm 24/25 34 36 38 29 30 NTC 3 6/7 10/11 14/15 21/22 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 45/46 41 40 48/49 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220f VVZB135-16ioXT Thyristor 160 600 120 500 10000 TVJ = 45°C 2 It IFSM IF 400 80 [A] [A] TVJ= 150°C 2 [A s] TVJ = 150°C TVJ = 150°C TVJ= 45°C 1000 300 40 TVJ = 125°C TVJ = 25°C 0 0.5 1.0 1.5 50Hz, 80% VRRM 200 0.001 0.01 2.0 Fig. 1 Forward current vs. voltage drop per thyristor 2 Fig. 3 I t vs. time per thyristor 140 100 100 IT(AV)M tgd typ. 80 Limit [A] 1 [V] [µs] 10 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 0.1 100 1000 20 1 10 10000 0 100 0 100 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 40 0.6 ZthJC Constants for ZthJC calc.: i Rth (K/W) ti (s) 1 2 3 4 5 0.2 20 0.0 20 40 60 IT(AV)M [A] 0 50 100 Tamb [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per thyristor IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 75 100 125 150 175 0.8 [K/W] 0 50 Fig. 5 Max. forward current vs. case temperature per thyristor 0.4 [W] 0 25 TC [°C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 60 1000 IG [mA] IG [mA] 80 60 40 TVJ = 125°C Ptot DC = 1 0.5 0.4 0.33 0.17 0.08 6 2 10 4 5 6 7 89 120 5 1 3 t [ms] 1000 34 1 2 1 Fig. 2 Surge overload current vs. time per thyristor 1: IGD, TVJ = 150°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C VG 1 t [s] VF [V] 10 100 0.1 1 10 100 0.080 0.030 0.160 0.160 0.247 1000 0.004 0.010 0.025 0.400 0.090 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per thyristor Data according to IEC 60747and per semiconductor unless otherwise specified 20191220f VVZB135-16ioXT Brake IGBT 150 150 VGE = 15 V 125 125 100 IC 150 13V VGE = 15 V 17 V 19 V 11V 125 100 TVJ = 25°C 100 IC IC 75 75 TVJ = 125°C [A] 75 [A] 9V 50 50 25 25 [A] 50 TVJ = 125°C 0 TVJ = 125°C TVJ = 25°C 0 0 1 2 3 0 0 1 2 3 4 5 Fig. 1 Typ. output characteristics 15 12 8 [mJ] [mJ] 7 Eoff 5 4 0 Eon 100 200 300 IC = 75 A VCE = 600 V VGE = ±15 V TVJ = 125°C 5 0 QG [nC] 40 80 120 160 IC [A] Fig. 4 Typ. turn-on gate charge Eon 6 0 0 Eoff E 8 [V] 10 11 12 13 9 E 10 9 10 RG = 10 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C 75 A VCE = 600 V 8 Fig. 3 Typ. tranfer characteristics 16 = 7 VGE [V] Fig. 2 Typ. output characteristics 20 IC 6 VCE [V] VCE [V] VGE 25 8 12 16 20 24 RG [Ohm] Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus gate resistance 1 ZthJC 0.1 [K/W] 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 t [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220f VVZB135-16ioXT Brake Diode 80 5 60 TVJ = 125°C VR = 800 V 70 4 60 IF 50 IF = 60 A 30 A 15 A Qr 3 40 [A] TVJ = 125°C 25°C 30 50 IF = 60 A 30 A 15 A 40 IRM 30 [A] [µC] 2 20 20 1 0 0 1 2 0 100 3 TVJ = 125°C VR = 800 V 10 10 0 1000 VF [V] 0 200 2.0 220 1.5 Kf 1.0 TVJ = 125°C IF = 30 A 1.0 80 0.8 60 0.6 VFR [ns] 160 trr [µs] [V] 40 IRM 0.5 140 QR 0.4 20 0.2 trr VFR 0.0 0 120 0 1000 1.2 100 IF = 60 A 30 A 15 A trr 180 800 120 TVJ = 125°C VR = 800 V 200 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt Fig. 1 Forward current IF vs. VF 400 -diF /dt [A/µs] -diF /dt [A/µs] 40 80 120 160 0 TVJ [°C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 200 400 600 800 1000 -diF /dt [A/µs] 0 200 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 ZthJC 0.1 i [K/W] Ri [K/W] 1 0.465 2 0.179 3 0.256 0.01 0.001 0.01 0.1 ti [s] 0.0052 0.0003 0.0397 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220f