VVZB135

VVZB 135 Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10 + 11 13 16 15 14 19 + 20 VRRM = 1600 V IdAVM = 135 A 12 NTC VRRM V 1600 Type 6+7 4+5 2+3 1 VVZB 135-16 NO1 17 8+9 18 21+22 Symbol VRRM IdAVM IFSM I2t Ptot (di/dt)cr Rectifier Bridge Conditions TC = 85°C; sinusoidal 120° TVJ = 45°C; t = 10 ms; VR = 0 V TVJ = 150°C; t = 10 ms; VR = 0 V TVJ = 45°C; t = 10 ms; VR = 0 V TVJ = 150°C; t = 10 ms; VR = 0 V TC = 25°C per diode TVJ = TVJM; repetitive; IT = 150 A f = 50 Hz; tP = 200 µs VD = 2/3 VDRM; IG = 0.45 A; non repetitive; IT = Id(AV)/3 diG/dt = 0.45 A/µs TVJ = TVJM; VDR = 2/3 VDRM; RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM; tP = 30 µs IT = Id(AV)/3; tP = 300 µs Maximum Ratings 1600 Features • Soldering connections for PCB mounting • Convenient package outline • Thermistor • Isolation voltage 2500 V~ 135 700 610 2450 1860 190 100 V A A A A A W A/µs Applications • Drive Inverters with brake system Advantages 500 1000 10 5 0.5 A/µs V/µs W W W V V A A A W V A A A A W • 2 functions in one package • Easy to mount with two screws • Suitable for wave soldering • High temperature and power cycling capability (dv/dt)cr PGM PGAVM VCES VGE IGBT TVJ = 25°C to 150°C Continuous TC = 25°C; DC TC = 80°C; DC tp = Pulse width limited by TVJM TC = 25°C Fast Recovery Diode 1200 ± 20 95 67 100 380 1200 27 38 tbd 200 130 IC25 IC80 ICM Ptot VRRM IFAV IFRMS IFRM IFSM Ptot TC = 80°C; rectangular d = 0.5 TC = 80°C; rectangular d = 0.5 TC = 80°C; tP = 10 µs; f = 5 kHz TVJ = 45°C; t = 10 ms TC = 25°C Data according to IEC 60747 428 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-5 VVZB 135 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.1 mA 20 mA 1.43 0.85 7.1 1.5 1.6 78 200 0.2 5 450 100 2 150 V V mΩ V V mA mA V mA mA mA µs µs IR, ID VF, VT VT0 rT VGT IGT Rectifier Bridge Rectifier Diodes VR = VRRM; VR = VRRM; IF = 80 A; TVJ = 25°C TVJ = 150°C TVJ = 25°C for power-loss calculations only TVJ = 150°C VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ TVJ TVJ TVJ = 25°C = -40°C = 25°C = -40°C VGD IGD IL IH tgd tq VD = 2/3 VDRM VD = 2/3 VDRM VD = 6 V; tG = 10 µs; diG/dt = 0.45 A/µs; IG = 0.45 A TVJ = TVJM; VD = 6 V; RGK = ∞ VD = ½ VDRM; diG/dt = 0.45 A/µs; IG = 0.45 A TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs; dv/dt = 15 V/µs; IT = 20 A; -di/dt = 10 A/µs per diode 0.2 VGS = 0 V; IC = 0.1 mA IC = 8 mA VCE = 1200 V; TVJ = 25°C VCE = 0,8•VCES; TVJ = 125°C VGE = 15 V; IC = 100 A VGE = 15 V; VCE = 900 V; TVJ = 125°C VGE = 15 V; VCE = 1200 V; TVJ = 125°C; clamped inductive load; L = 100 µH; RG = 22 Ω VCE = 25 V; f = 1 MHz, VGE = 0 V VCE = 720 V; IC = 50 A VGE = 15 V; RG = 22 Ω Inductive load; L = 100 µH; TVJ = 125°C 3.8 150 680 6 5 0.1 1200 4.5 RthJC RthCH VBR(CES) VGE(th) ICES VCEsat tSC (SCSOA) IGBT 0.65 K/W K/W 6.45 0.1 0.5 3.5 10 100 V V mA mA V µs A RBSOA Cies td(on) td(off) Eon Eoff RthJC RthCH nF ns ns mJ mJ 0.33 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 2-5 428 VVZB 135 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.25 mA 1 mA 2.76 1.3 16 5.5 40 0.25 NTC 10 V VG 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C IR VF VT0 rT IRM trr RthJC RthCH R25 B25/50 Symbol TVJ TVJM Tstg Module Fast Recovery Diode VR = VRRM; TVJ = 25°C VR = 1200 V; TVJ = 125°C IF = 30 A; TVJ = 25°C V V mΩ A ns 3 For power-loss calculations only TVJ = 150°C IF = 50 A; -diF/dt = 100 A/µs; VR = 100 V IF = 1 A; -diF/dt = 200 A/µs; VR = 30 V 1 1 2 5 4 6 11 0.9 K/W K/W kΩ K 0.1 1 IGD, TVJ = 125°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W R(T) = R25 • e B25/100 ( 1 T 1 298K ) 4.75 5.0 5.25 3375 10 100 1000 IG mA Fig. 1 Gate trigger characteristics Conditions Maximum Ratings -40...+150 150 -40...+125 50/60 Hz; t = 1 min IISOL ≤ 1 mA; t = 1 s Mounting torque Creep distance on surface Strike distance in air Maximum allowable acceleration typ. 2500 3000 2.25...2.75 20...25 12.7 9.6 50 180 °C °C °C V~ V~ Nm lb.in. mm mm m/s2 g 1 10 1000 TVJ = 25°C µs tgd 100 typ. Limit VISOL Md dS dA a Weight 10 Dimensions in mm (1 mm = 0.0394") 100 IG mA 1000 Fig. 2 Gate trigger delay time IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 3-5 428 VVZB 135 150 A 125 IT 100 ITSM 400 TVJ =45°C TVJ = 45°C 75 300 1000 TVJ =150°C 600 A 500 50 Hz 80 % VRRM 10000 It As 2 2 VR = 0 V 50 TVJ =125°C 200 TVJ =150°C 25 TVJ = 25°C 0 0.0 0.5 1.0 1.5 VT V 2.0 100 0 0.001 100 0.01 t 0.1 s 1 1 t ms 10 Fig. 3 Forward current versus voltage drop per leg 250 W 0.5 200 Ptot Fig. 4 Surge overload current 150 0.2 A 120 ITAVM Fig. 5 I²t versus time (per thyristor/diode) RthKA K/W = 150 1 100 90 1.5 2 60 50 3 5 30 0 0 30 60 90 IRMS 120 A 0 25 50 75 100 TA 125 150 0 0 25 50 75 100 125 150 TC Fig. 6 Power dissipation versus direct output current and ambient temperature 0.7 K/W 0.6 0.5 ZthJC 0.4 0.3 Fig. 7 Maximum forward current at case temperature Constants for ZthJC calculation: 0.2 0.1 0.0 0.001 VVZB 135 Rthi / (K/W) 0.03 0.083 0.361 0.176 ti / (s) 0.0005 0.008 0.094 0.45 0.01 0.1 1 t s 10 Fig. 8 Transient thermal impedance junction to case (per thyristor/diode) IXYS reserves the right to change limits, test conditions and dimensions. 428 © 2004 IXYS All rights reserved 4-5 VVZB 135 150 A 90 A TVJ = 25°C TVJ = 125°C 120 IC IF 60 TVJ = 125°C 90 60 30 30 VGE = 15V TVJ = 25°C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 3.5 V 4.0 0.0 0.5 1.0 1.5 2.0 VF 2.5 3.0 V 3.5 Fig. 9 Typ. output characteristics Fig. 10 Typ. forward characteristics of free wheeling diode 900 ns 9 mJ Eoff 10 mJ t Eoff td(off) 1000 ns 800 t 600 8 6 6 VCE = 720 V VGE = ±15 V td(off) 600 4 300 Eoff 3 Eoff RG = 22 Ω TVJ = 125°C 2 tf 0 VCE = 720 V VGE = ±15 V IC = 50 A TVJ = 125°C 400 200 tf 0 50 Ω 60 RG 0 0 20 40 60 80 IC 0 0 10 20 30 40 100 A 120 Fig. 11 Typ. turn off energy and switching times versus collector current 1 diode Fig. 12 Typ. turn off energy and switching times versus gate resistor K/W 0.1 ZthJC 0.01 IGBT 10000 Ω R 1000 0.001 single pulse 0.0001 0.00001 0.0001 0.001 100 0.01 0.1 t 1 s 10 0 25 50 75 100 T VVZB 135 125 °C 150 Fig. 13 Typ. transient thermal impedance Fig. 14 Typ. thermistor resistance versus temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 5-5 428