VVZB170-16IOXT

VVZB170-16ioXT 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 180 A I C25 = 180 A I FSM = 1100 A VCE(sat) = 1.7 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC Part number VVZB170-16ioXT Backside: isolated 24/25 34 36 38 30 29 45/46 NTC 3 6/7 10/11 14/15 21/22 41 40 48/49 Features / Advantages: Applications: Package: E2-Pack ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● NTC ● X2PT - 2nd generation Xtreme light Punch Through ● Rugged X2PT design results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic ● Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance ● 3~ Rectifier with brake unit for drive inverters ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Height: 17 mm ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h VVZB170-16ioXT Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25°C 50 µA TVJ = 150°C 20 mA IT = TVJ = 25°C 1.27 V 1.90 V 1.25 V IT = 60 A TVJ = 125 °C 60 A I T = 180 A TC = 85 °C bridge output current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case rectangular RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current I²t value for fusing 2.04 V T VJ = 150 °C 180 A TVJ = 150 °C 0.83 V 6.9 mΩ d=⅓ for power loss calculation only Ptot V VR/D = 1600 V I T = 180 A I DAV max. Unit 1700 V 0.5 K/W 0.1 K/W TC = 25°C 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 1.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.19 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.01 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 6.05 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 5.89 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 4.37 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 4.25 kA²s 54 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 180 A t P = 200 µs; di G /dt = 0.45 A/µs; (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.5 TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 95 mA TVJ = -40 °C 200 mA VGD gate non-trigger voltage TVJ = 150°C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 °C 450 mA I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 150 A/µs 60 A 500 A/µs 1000 V/µs TVJ = 150°C R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 60A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h VVZB170-16ioXT Ratings Brake IGBT + Diode Symbol VCES Definition Conditions min. VGES max. DC gate voltage ±20 V VGEM max. transient gate emitter voltage ±30 V I C25 collector current TC = 25°C 180 A TC = 80 °C 140 A 500 W 2.1 V TVJ = collector emitter voltage I C80 TC = 25°C Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 4 mA; VGE = V CE TVJ = 25°C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25°C I GES gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C =100 A t d(on) turn-on delay time I C = 100 A; V GE = 15 V TVJ = 25°C 1.7 TVJ = 125°C 1.9 TVJ = 125°C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25°C inductive load 6.8 TVJ = 125°C VGE = ±15 V; R G = 6.8 Ω SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1200 V VCE = 720 V; VGE = ±15 I SC short circuit current RG = 6.8 Ω; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 7.5 V 0.1 mA 0.1 mA nA 340 nC 230 ns 70 ns 380 ns 230 ns 12.5 mJ 11.5 mJ TVJ = 125°C VCEK = 1200 V I CM V 500 VCE = 600 V; IC = 100 A VGE = ±15 V; R G = 6.8 Ω 6 max. Unit 1200 V TVJ = 125°C 300 A 10 µs A 450 0.25 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 48 A TC = 80 °C 32 A TVJ = 25°C 2.75 V TVJ = 25°C 0.25 mA TVJ = 125°C 1 mA I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 1000 A/µs trr reverse recovery time IF = E rec reverse recovery energy R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125°C IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 600 V 30 A; VGE = 0 V TVJ = 125°C 1.60 V 5.2 µC 50 A 300 ns 1.9 mJ 0.9 K/W 0.3 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20191220h VVZB170-16ioXT Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 50 Unit A -40 150 °C -40 125 °C 125 °C 176 Weight MD 3 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 6 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA 2D Barcode XXXXXXXXXX yywwZ Logo UL Part Number Date Code Location Ordering Standard Ordering Number VVZB170-16IOXT Marking on Product VVZB170-16IOXT Delivery Mode Box Quantity 6 Code No. 510482 105 Temperature Sensor NTC Symbol Definition Conditions R25 resistance TVJ = 25° B25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 kΩ R K [ ] 104 103 Equivalent Circuits for Simulation I V0 R0 * on die level Thyristor Brake Diode V 0 max threshold voltage 0.83 1.31 R0 max slope resistance * 3.7 8 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved T VJ = 150°C 102 0 V mΩ 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h VVZB170-16ioXT Outlines E2-Pack D A 17 ±0,5 20,6 ±0,5 3,5 ±0,5 Ø6 Vor der Montage typ. 100 µm konvex über 75 mm Before mounting typ. 100 µm convex over 75 mm Ø 2,5 -0,3 Ø 2,1 -0,3 1,5 +0,3 Detail C Detail D 0,8 ±0,2 15° ±1° 6 Detail A 0,8 ±0,05 1,2 ±0,05 93 ±0,2 65,55 69,36 24 47 23 15.24 11.43 11,43 0 48 22 49 21 50 4 5 6 7 8 9 7.62 7,62 11,43 11.43 20 10 11 12 13 14 15 16 17 18 19 46,50 50.31 3 31,26 35,07 0 2 19,83 1 61,74 65,55 Index 41,90 50,31 42,69 46 32 ±0,2 Ø 5,5 +0,1 - 0,3 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 45 11 45 ±0,2 35,07 23,64 27,45 79,2 C 107,5 ±0,3 Bemerkung / Note: - Nichttolerierte Maße nach / Measure without tolerances according DIN ISO 2768-T1-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: - Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024 0.1 Detail A: PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT® (Größe / size: K25) - Max. Schraubenlänge / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / Recommended mounting torque: 1.5 Nm 24/25 34 36 38 29 30 NTC 3 6/7 10/11 14/15 21/22 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 45/46 41 40 48/49 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h VVZB170-16ioXT Thyristor 200 900 8000 TVJ = 125°C TVJ = 25°C 800 TVJ = 45°C 150 IF 6000 IFSM 700 2 TVJ= 45°C It 100 4000 [A] [A] 600 2 [A s] TVJ = 150°C 50 500 0 0.0 0.5 1.0 1.5 50Hz, 80% VRRM 400 0.001 0.01 2.0 VF [V] 0 0.1 1 2 1 t [s] Fig. 1 Forward current vs. voltage drop per thyristor 10 TVJ= 150°C 2000 4 5 6 7 89 t [ms] 2 Fig. 2 Surge overload current vs. time per thyristor 1000 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 3 Fig. 3 I t vs. time per thyristor 160 TVJ = 25°C DC = 1 0.5 0.4 0.33 0.17 0.08 140 typ. 120 Limit 100 6 VG 5 1 [V] 100 IT(AV)M tgd 80 [µs] 4 2 3 [A] 10 1 60 40 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, T4 = 125°C 0.1 100 101 102 103 20 1 10 104 0 100 1000 0 Fig. 4 Gate trigger characteristics 150 Fig. 5 Max. forward current vs. case temperature per thyristor 0.6 DC = 1 0.5 0.4 100 0.33 0.17 80 0.08 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 0.5 0.4 ZthJC Ptot Constants for ZthJC calc.: 0.3 60 [K/W] [W] 40 0.2 20 0.1 0 0.0 20 100 TC [°C] Fig. 5 Gate trigger delay time 120 0 50 IG [mA] IG [mA] 40 60 80 IT(AV)M [A] 0 50 100 Tamb [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per thyristor IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 1 10 i Rth (K/W) ti (s) 1 2 3 4 5 0.040 0.003 0.140 0.120 0.197 0.004 0.010 0.030 0.300 0.080 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per thyristor Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h VVZB170-16ioXT Brake IGBT + Diode 200 200 150 13 V VCE = 20 V 150 150 25°C IC 200 VGE = 19 V 17 V 15 V IC 125°C 100 11 V TVJ = 150°C IC 100 100 [A] [A] [A] 125°C 50 50 50 25°C 9V 0 0.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VCE [V] 400 RG = 6.8 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C 30 3 Eon tr 20 200 [mJ] [ns] 50 10 RG = 6.8 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C Eoff [ns] tf 20 0 200 200 100 Eoff 0 80 RG = 6.8 Ohm VR = 600 V TVJ = 125°C I rr 6 40 IF 30 [A] 125°C 60 Irr 4 40 [A] [mJ] 100 150 2.5 200 Erec 10 20 30 40 50 0 60 1.5 2.0 2.5 Diode 100 Erec IGBT 1.5 75 [mJ] 1.0 50 ZthJC Irr 0.1 [K/W] [A] 0.5 0 1.0 1 20 Erec 0.5 VF [V] Fig. 6 Typ. forward characteristics Diode 125 TVJ = 125°C VR = 600 V IF = 30 A 25°C 0 0.0 0 50 Irr 2 10 IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current 2.0 Erec 0 50 400 300 [mJ] IC [A] Fig. 4 Typ. turn-on energy & switch. times vs. collector current 8 13 60 500 t 30 0 150 10 11 12 100 Eon 100 9 Fig. 3 Typ. transfer charact. IGBT t d(off) 10 50 8 20 tr 0 7 VGE [V] Fig.2 Typ. output characteristics IGBT 40 300 td(on) 0 6 4 VCE [V] Fig.1 Output characteristics IGBT 40 2 25 0.0 4 8 12 16 20 0 24 0.01 0.001 IGBT Ri ti 0.050 0.0010 0.035 0.0100 0.120 0.0300 0.045 0.0800 0.01 Diode Ri ti 0.365 0.0050 0.180 0.0003 0.255 0.0397 0.100 0.1000 0.1 1 IF [A] RG [Ohm] t [s] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode Fig. 9 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h