275-101N30A-00

DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 30.0 A IDM Tc = 25°C, pulse width limited by TJM 240 A IAR Tc = 25°C TBD A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5.5 V/ns dv/dt >200 V/ns 550 W 270 W 3.5 W RthJC 0.25 C/W RthJHS 0.53 C/W IS = 0 PDC PDHS Tc = 25°C Derate 4.4W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250 µa IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test 2 SG1 4 V ±100 nA 25 250 µA µA 0.06 Ω S +175 -55 Tstg Weight V 175 TJM TL 100 9.7 -55 TJ 1.6mm(0.063 in) from case for 10 s ID25 = 30.0 A RDS(on) ≤ 0.06 Ω PDC = 550 W SG2 SD1 SD2 Features max. 2.5 100 V GATE TJ = 25°C unless otherwise specified typ. = DRAIN Characteristic Values min. VDSS °C °C +175 °C 300 °C 2 g • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (