375-102N12A-00

DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 12 A IDM Tc = 25°C, pulse width limited by TJM 72 A IAR Tc = 25°C 12 A EAR Tc = 25°C 30 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 940 W 425 W 4.5 W RthJC 0.16 C/W RthJHS 0.35 C/W IS = 0 PDC PDHS Tc = 25°C Derate 3.7W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250 µa IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C TJ = 125°C VGS = 0 RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test min. 1000 4.0 V 4.7 6.7 5.5 V ±100 nA 50 1 µA mA 1.05 Ω 8.0 S +175 °C 175 TJM -55 Tstg Weight max. -55 TJ TL typ. 1.6mm (0.063 in) from case for 10 s = 1000 V ID25 = 12 A RDS(on) ≤ 1.05 Ω PDC = 940 W DRAIN GATE SG1 SG2 SD1 SD2 Features Characteristic Values TJ = 25°C unless otherwise specified VDSS °C +175 °C 300 °C 3 g • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (