375-102N15A-00

DE375-102N15A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 15 A IDM Tc = 25°C, pulse width limited by TJM 90 A IAR Tc = 25°C 15 A EAR Tc = 25°C 1 J 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 940 W 425 W 4.5 W IS = 0 PDC PDHS Tc = 25°C Derate 3.7W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions min. VDSS VGS = 0 V, ID = 3 ma 1000 VGS(th) VDS = VGS, ID = 1 ma 4.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% RthJC RthJHS VDS = 15 V, ID = 0.5ID25, pulse test Weight V 5.4 -55 = 15 A RDS(on) ≤ 1.0 Ω PDC = 940 W GATE SG2 SD1 SD2 -55 • Isolated Substrate -High isolation voltage (>2500V) -Excellent thermal transfer 6.0 V ±100 nA -Increased temperature and power cycling capability 50 1 µA mA • IXYS advanced low Qg process • Low gate charge and capacitances 1.00 Ω -Easier to drive 0.13 °C/W °C/W 13.0 S +150 °C 150 1.6mm (0.063 in) from case for 10 s ID25 Features max. 11.3 TJM TL typ. 0.3 Tstg 1000 V Characteristic Values TJ = 25°C unless otherwise specified TJ = DRAIN SG1 gfs VDSS °C +150 °C 300 °C 3 g -Faster switching • Low RDS(on) • Very low insertion inductance (