475-102N20A-00

DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 20 A IDM Tc = 25°C, pulse width limited by TJM 120 A IAR Tc = 25°C 20 A EAR Tc = 25°C 30 mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 1800 W 730 W 4.5 W RthJC 0.08 C/W RthJHS 0.20 C/W IS = 0 PDC PDHS Tc = 25°C Derate 4.4W/°C above 25°C PDAMB Tc = 25°C VDSS = 1000 V ID25 = 20 A RDS(on) ≤ 0.6 Ω PDC = 1800W DRAIN GATE SG1 SG2 SD1 SD2 Features Symbol Test Conditions • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power Characteristic Values TJ = 25°C unless otherwise specified min. VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250 µa IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test typ. 1000 3.0 3.6 6 Advantages ±100 nA 9 +150 -55 1.6mm (0.063 in) from case for 10 s S V 150 Tstg Ω 5.0 0.6 +150 cycling capability IXYS advanced low Qg process • • − − • • • 50 µA 1 mA TJM Weight V -55 TJ TL max. Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (