CLA20EF1200PZ-TRL

CLA20EF1200PZ advanced High Efficiency Thyristor VDRM = 1200 V I TAV = 20 A VT = 1.4 V Triode Single Reverse Conducting Thyristor Part number CLA20EF1200PZ Marking on Product: CLA20EF1200PZ Backside: anode 4 3 1 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Thyristor for fast turn-on switching ● Integrated free wheeling diode ● Planar passivated chip ● Long-term stability ● Ignition for HD lamps ● Capacity discharge ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b CLA20EF1200PZ advanced Ratings Thyristor Conditions Symbol VDSM Definition max. non-repetitive forward blocking voltage TVJ = 25°C VDRM max. repetitive forward blocking voltage TVJ = 25°C 1200 ID drain current VT min. typ. max. Unit 1300 V V VD = 1200 V TVJ = 25°C 10 µA VD = 1200 V TVJ = 125°C 1 mA forward voltage drop IT = 20 A TVJ = 25°C 1.40 V Note: reverse voltage drop ~1.2 x VT IT = 40 A 1.60 V IT = 20 A 1.40 V IT = 40 A I TAV average forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C TC = 115 °C 1.60 V T VJ = 150 °C 20 A TVJ = 150 °C 0.90 V 25 mΩ DC for power loss calculation only RthCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing 0.65 K/W K/W 0.25 TC = 25°C 190 W t = 10 ms; (50 Hz), sine TVJ = 45°C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45°C 72 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 70 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 50 A²s 50 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 6 t P = 300 µs pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 1 µs; di G /dt = 0.5 A/µs; I TSA = 600 A 60 A 500 A/µs I G = 0.07 A; V = ⅔ VDRM 20 A 1500 A/µs (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current non-repet., I T = TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C 20 mA TVJ = -40 °C 35 mA TVJ = 150°C 0.2 V 1 mA TVJ = 25 °C 30 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.07 A; di G /dt = V 0.5 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 25 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.07 A; di G /dt = VR = 0.5 A/µs 0 V; I T = 20 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b CLA20EF1200PZ advanced Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 35 Unit A -40 150 °C -40 125 °C 150 °C 1.5 Weight FC 20 mounting force with clip d Spp/App typ. Product Marking C L A 20 EF 1200 PZ IXYS Zyyww Logo Assembly Line Date Code N 4.2 mm terminal to backside 4.7 mm Part description XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Reverse Conducting Thyristor Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Alternative Ordering Number CLA20EF1200PZ-TRL CLA20EF1200PZ-TUB Similar Part CLA20EF1200PB Equivalent Circuits for Simulation I V0 R0 Marking on Product CLA20EF1200PZ CLA20EF1200PZ Package TO-220AB (3) * on die level Delivery Mode Tape & Reel Tube Code No. 522555 523762 Voltage class 1200 T VJ = 150 °C Thyristor V 0 max threshold voltage 0.9 V R0 max slope resistance * 22 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b CLA20EF1200PZ advanced Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 1 4 3 L e1 D2 A2 c 2x e 2x b2 10.92 (0.430) mm (Inches) 2x b W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.091 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) E1 A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.3 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 4 3 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b CLA20EF1200PZ advanced Thyristor IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b