CLA30E1200PB

CLA30E1200PB High Efficiency Thyristor VRRM = 1200 V I TAV = 30 A VT = 1.27 V Single Thyristor Part number CLA30E1200PB Backside: anode 4/2 1 3 Features / Advantages: Applications: Package: TO-220 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129f CLA30E1200PB Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25°C 10 µA 2 mA TVJ = 25°C 1.30 V 1.59 V 1.27 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I T(RMS) RMS forward current 180° sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 °C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125°C TC = 115 °C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV I²t min. 1.65 V T VJ = 150 °C 30 A 47 A TVJ = 150 °C 0.86 V 13.2 mΩ 0.5 K/W 0.5 K/W TC = 25°C 250 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 440 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 150 °C 13 t P = 300 µs PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0.3 A/µs; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM VGT gate trigger voltage I GT gate trigger current VGD gate non-trigger voltage I GD gate non-trigger current IL latching current 0.3 A; V = ⅔ VDRM non-repet., I T = pF 10 W 5 W 0.5 W 150 A/µs 500 A/µs TVJ = 150°C 500 V/µs VD = 6 V TVJ = 25 °C 1.3 TVJ = -40 °C 1.6 V VD = 6 V TVJ = 25 °C 30 mA TVJ = -40 °C 50 mA TVJ = 150°C 0.2 V 1 mA TVJ = 25 °C 90 mA R GK = ∞; method 1 (linear voltage rise) VD = ⅔ VDRM tp = 10 µs IG = 0.3 A; di G /dt = V 0.3 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 60 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.3 A; di G /dt = VR = 100 V; I T = 0.3 A/µs 30A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 150 µs 20 V/µs t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20191129f CLA30E1200PB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 150 °C -40 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description C L A 30 E 1200 PB XXXXXX = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Single Thyristor Reverse Voltage [V] TO-220AB (3) yywwZ 123456 Location Ordering Standard Ordering Number CLA30E1200PB Similar Part CLA30E1200HB CLA30E1200PC CS22-12io1M CS22-08io1M Package TO-247AD (3) TO-263AB (D2Pak) (2) TO-220ABFP (3) TO-220ABFP (3) CMA30E1600PN CMA30E1600PB TO-220ABFP (3) TO-220AB (3) Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 50 Code No. 508228 Voltage class 1200 1200 1200 800 1600 1600 T VJ = 150°C Thyristor V 0 max threshold voltage 0.86 R0 max slope resistance * 10 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product CLA30E1200PB V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20191129f CLA30E1200PB Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b 2x e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. C A2 4/2 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129f CLA30E1200PB Thyristor 60 280 50 1000 50 Hz, 80% VRRM VR = 0 V 240 40 TVJ = 45°C IT 2 It 200 TVJ = 45°C ITSM 30 2 [A] [A s] 160 20 [A] TVJ = 150°C 125°C 10 TVJ = 125°C TVJ = 125°C 100 120 TVJ = 25°C 0 0,5 1,0 1,5 80 0,001 2,0 0,01 VT [V] B IGT: TVJ = 25°C 2 [V] 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 40 C IGT: TVJ = -40°C IGT: TVJ = 0°C B 2 2 102 B VG 1 Fig. 2 Surge overload current ITSM: crest value, t: duration IGD: TVJ = 125°C 3 1 t [s] Fig. 1 Forward characteristics 4 0,1 30 TVJ = 125°C 101 tgd IT(AV)M [µs] [A] dc = 1 0.5 0.4 0.33 0.17 0.08 20 lim. 100 10 IGD: TVJ = 25°C typ. A 10-1 10-2 0 0 25 50 75 10-1 100 0 101 0 40 IG [A] IG [mA] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current Triggering: A = no; B = possible; C = safe 60 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0,6 dc = 1 0.5 0.4 0.33 0.17 0.08 50 40 P(AV) RthHA 0.6 0.8 1.0 2.0 4.0 8.0 0,5 0,4 ZthJC 30 0,3 [W] i Rthi (K/W) 1 0.08 2 0.06 3 0.2 4 0.05 5 0.11 [K/W] 20 0,2 10 0,1 0 ti (s) 0.01 0.0001 0.02 0.2 0.11 0,0 0 10 20 30 40 0 IT(AV) [A] 50 100 150 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 7 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20191129f CLA30E1200PB IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129f